P4C1023/P4C1023L
RECOMMENDED OPERATING TEMPERATURE & SUPPLY VOLTAGE
Temperature Range (Ambient)
Commercial (0°C to 70°C)
Industrial (-40°C to 85°C)
Military (-55°C to 125°C)
Supply Voltage
4.5V
≤
V
CC
≤
5.5V
4.5V
≤
V
CC
≤
5.5V
4.5V
≤
V
CC
≤
5.5V
MAXIMUM RATINGS
Stresses greater than those listed can cause permanent damage to the device. These are absolute stress ratings only.
Functional operation of the device is not implied at these or any other conditions in excess of those given in the opera-
tional sections of this data sheet. Exposure to Maximum Ratings for extended periods can adversely affect device
reliability.
Symbol
V
CC
V
TERM
T
A
S
TG
I
OUT
I
LAT
Parameter
Supply Voltage with Respect to GND
Terminal Voltage with Respect to GND (up to 7.0V)
Operating Ambient Temperature
Storage Temperature
Output Current into Low Outputs
Latch-up Current
>200
Min
-0.5
-0.5
-55
-65
Max
7.0
V
CC
+ 0.5
125
150
25
Unit
V
V
°C
°C
mA
mA
DC ELECTRICAL CHARACTERISTICS
(Over Recommended Operating Temperature & Supply Voltage)
Symbol
V
OH
V
OL
V
IH
V
IL
I
LI
Parameter
Output High Voltage
(I/O
0
- I/O
7
)
Output Low Voltage
(I/O
0
- I/O
7
)
Input High Voltage
Input Low Voltage
Input Leakage Current
GND
≤
V
IN
≤
V
CC
Comm.
Industrial
Military
Comm.
Industrial
Military
I
SB
V
CC
Current
TTL Standby Current
(TTL Input Levels)
V
CC
Current
CMOS Standby Current
(CMOS Input Levels)
V
CC
= 5.5V, I
OUT
= 0 mA
CE
1
= V
IH
or CE
2
= V
IL
V
CC
= 5.5V, I
OUT
= 0 mA
CE
1
≥
V
CC
-0.2V, CE
2
≤
0.2V
100
µA
Test Conditions
I
OH
= –1mA, V
CC
= 4.5V
I
OL
= 2.1mA
2.2
-0.3
-2
-5
-10
-2
-5
-10
Min
2.4
0.4
V
CC
+ 0.3
0.8
+2
+5
+10
+2
+5
+10
3
mA
Max
Unit
V
V
V
V
µA
GND
≤
V
OUT
≤
V
CC
I
LO
Output Leakage Current
CE
1
≥
V
IH
or CE
2
≤
V
IL
µA
I
SB1
Document #
SRAM126
REV OR
Page 2 of 11
PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
