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P4C1023-55CC 参数 Datasheet PDF下载

P4C1023-55CC图片预览
型号: P4C1023-55CC
PDF下载: 下载PDF文件 查看货源
内容描述: 低功耗128K ×8单芯片使能CMOS静态RAM [LOW POWER 128K x 8 SINGLE CHIP ENABLE CMOS STATIC RAM]
分类和应用:
文件页数/大小: 11 页 / 336 K
品牌: PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
 浏览型号P4C1023-55CC的Datasheet PDF文件第1页浏览型号P4C1023-55CC的Datasheet PDF文件第2页浏览型号P4C1023-55CC的Datasheet PDF文件第3页浏览型号P4C1023-55CC的Datasheet PDF文件第4页浏览型号P4C1023-55CC的Datasheet PDF文件第6页浏览型号P4C1023-55CC的Datasheet PDF文件第7页浏览型号P4C1023-55CC的Datasheet PDF文件第8页浏览型号P4C1023-55CC的Datasheet PDF文件第9页  
P4C1023/P4C1023L
AC CHARACTERISTICS - WRITE CYCLE
(Over Recommended Operating Temperature & Supply Voltage)
Symbol
t
WC
t
CW
t
AW
t
AS
t
WP
t
AH
t
DW
t
DH
t
WZ
t
OW
Parameter
Write Cycle Time
Chip Enable Time
to End of Write
Address Valid to
End of Write
Address Set-up Time
Write Pulse Width
Address Hold Time
Data Valid to End
of Write
Data Hold Time
Write Enable to
Output in High Z
Output Active from
End of Write
5
-55
Min
55
50
50
0
40
0
25
0
25
5
Max
Min
70
60
60
0
50
0
30
0
30
-70
Max
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
WRITE CYCLE NO. 1 (WE CONTROLLED)
(6)
WE
Notes:
6.
CE
and
WE
are LOW for WRITE cycle.
7.
OE
is LOW for this WRITE cycle to show twz and tow.
8. Write Cycle Time is measured from the last valid address to the first transitioning address.
Document #
SRAM126
REV OR
Page 5 of 11