P4C1023/P4C1023L
CAPACITANCES
(4)
(V
CC
= 5.0V, T
A
= 25°C, f = 1.0 MHz)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Test Conditions
V
IN
= 0V
V
OUT
= 0V
Max
7
9
Unit
pF
pF
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Symbol
Parameter
Temperature
Range
Commercial
I
CC
Dynamic Operating Current
Industrial
Military
Note 1
-55
-70
20
25
35
20
25
35
mA
Unit
Note 1 -
Tested with outputs open and all address and data inputs changing at the maximum write-cycle rate.
The device is continuously enabled for writing, i.e., CE
2
≥
V
IH
(min),
CE
1
and
WE
≤
V
IL
(max),
OE
is high. Switching
inputs are 0V and 3V.
AC ELECTRICAL CHARACTERISTICS - READ CYCLE
(Over Recommended Operating Temperature & Supply Voltage)
Symbol
t
RC
t
AA
t
AC
t
OH
t
LZ
t
HZ
t
OE
t
OLZ
t
OHZ
t
PU
t
PD
Parameter
Read Cycle Time
Address Access Time
Chip Enable Access
Time
Output Hold from
Address Change
Chip Enable to
Output in Low Z
Chip Disable to
Output in High Z
Output Enable Low
to Data Valid
Output Enable Low to
Low Z
Output Enable High
to High Z
Chip Enable to Power
Up Time
Chip Disable to
Power Down Time
0
55
5
20
0
70
-55
Min
55
55
55
5
10
20
30
5
25
5
10
25
35
Max
Min
70
70
70
-70
Max
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Document #
SRAM126
REV OR
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