tm
TE
CH
T2316405A
Preliminary T2316407A
READ WRITE CYCLE
(LATE WRITE and READ-MODIFY-WRITE CYCLES)
t R WC
tR A S
tR P
RA S V IH
V IL
tC R P
CA S
V IH
V IL
t RC D
tC S H
tR S H
tC A S
tA R
tR AD
tA S R
tR A H
RO W
tA S C
tR AL
tC A H
RO W
t R WD
t C WD
t A WD
t C WL
t R WL
t WP
ADDR V IH
V IL
COLUMN
tR C S
WE
V IH
V IL
tA A
tR A C
tC AC
tC L Z
tD S
V A LID D
t DH
OPE N
I/O
V IOH
V IOL
V IH
V IL
OP EN
tO A C
OU T
V A L ID D
IN
tO F F 2
tO E H
OE
EDO-PAGE-MODE READ CYCLE
t RA S C
tR P
RAS VIH
V IL
tC R P
tC S H
tR C D
tC A S
tP C
tC P
tC A S
tC P
tR SH
t C AS
tC P N
V
CA S VIH
IL
t RA D
t RA H
tA R
tR A L
tA S C
t CA H
tA S C
t CA H
tA S C
t CA H
tA S R
ADDR
VIH
V IL
ROW
tR C S
C O L U MN
C OLUMN
C OLUMN
tR C H
ROW
tR RH
WE VIH
V IL
tA A
tR A C
tC A C
tC L Z
tC O H
V A L ID
D AT A
tO A C
tOES
t AA
tA C P
t CA C
tC L Z
V A LID
DA T A
tOFF2
tA A
tA C P
t CA C
N OTE1
tO F F 1
V A L ID
DA TA
tO F F 2
OP EN
I/O
V OH
V OL
O PE N
tO E H C
tO A C
tOES
V
OE VIH
IL
tO E P
DON'T CARE
UNDEF INED
Note:
1. t
OFF1
is referenced from the rising edge of
RAS
or
CAS
, whichever occurs last.
2. t
PC
can be measured from falling edge of CAS to falling edge of CAS , or from rising edge of
CAS to rising edge of CAS . Both measurements must meet the t
PC
specification.
2
Taiwan Memory Technology, Inc. reserves the right
P. 9
to change products or specifications without notice.
Publication Date: APR. 2001
Revision:0.B
TMT [ TAIWAN MEMORY TECHNOLOGY ]
