Advance Product Information
September19, 2005
TABLE I
MAXIMUM RATINGS
Symbol
V
+
V
-
I
+
| I
G
|
P
IN
P
D
T
CH
T
M
T
STG
1/
2/
3/
TGF2022-12
Value
12.5 V
-5V to 0V
564 mA
14 mA
26 dBm
See note 3
150
°C
320
°C
-65 to 150
°C
2/
2/ 3/
4/
2/
Parameter 1/
Positive Supply Voltage
Negative Supply Voltage Range
Positive Supply Current
Gate Supply Current
Input Continuous Wave Power
Power Dissipation
Operating Channel Temperature
Mounting Temperature (30 Seconds)
Storage Temperature
Notes
2/
These ratings represent the maximum operable values for this device.
Combinations of supply voltage, supply current, input power, and output power shall
not exceed P
D
.
For a median life time of 1E+6 hrs, Power dissipation is limited to:
P
D
(max) = (150
°C
– TBASE
°C)
/ 69.0 (°C/W)
Junction operating temperature will directly affect the device median time to failure
(T
M
). For maximum life, it is recommended that junction temperatures be maintained
at the lowest possible levels.
4/
TABLE II
DC PROBE CHARACTERISTICS
(T
A
= 25
qC,
Nominal)
Symbol
Idss
Gm
V
P
V
BGS
V
BGD
Parameter
Saturated Drain Current
Transconductance
Pinch-off Voltage
Breakdown Voltage
Gate-Source
Breakdown Voltage
Gate-Drain
Minimum
-
-
-1.5
-30
-30
Typical
360
450
-1
-
-
Maximum
-
-
-0.5
-14
-14
Unit
mA
mS
V
V
V
Note: For TriQuint’s 0.35um power pHEMT devices, RF breakdown >> DC breakdown
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
2
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