Advance Product Information
September19, 2005
TABLE III
RF CHARACTERIZATION TABLE 1/
(T
A
= 25
°C,
Nominal)
f = 10 GHz
Vd = 10V
Idq = 90 mA
Saturated Output Power
Power Added Efficiency
Power Gain
Parallel Resistance
Parallel Capacitance
Load Reflection
coefficient
31.9
52.4
12.9
22.34
0.552
0.580
∠
153.7
Vd = 12V
Idq = 90 mA
32.6
51.9
12.9
28.49
0.515
0.559
∠145.4
TGF2022-12
f = 18 GHz
UNITS
SYMBOL
Power Tuned:
PARAMETER
Vd = 10V
Idq = 90 mA
31.1
41.5
8.3
21.77
0.461
0.693
∠154.8
Vd = 12V
Idq = 90 mA
31.7
37.0
8.0
24.22
0.481
0.713
∠153.0
dBm
%
dB
Ω
pF
-
Psat
PAE
Gain
Rp 2/
Cp 2/
Γ
L
3/, 4/
Efficiency
Tuned:
Psat
PAE
Gain
Rp 2/
Cp 2/
Γ
L
3/, 4/
OIP3
Saturated Output Power
Power Added Efficiency
Power Gain
Parallel Resistance
Parallel Capacitance
Load Reflection
coefficient
Output TOI
31.3
58.3
13
36.24
0.503
0.569
∠137.1
40
32.3
56.0
13
37.11
0.510
0.577
∠136.6
39
30.5
46.0
8.5
25.65
0.550
0.759
∠153.5
40
31.1
42.5
8.3
33.49
0.559
0.795
∠150.6
39
dBm
%
dB
Ω
pF
-
dBm
1/ Values in this table are from measurements taken from a 0.6mm unit pHEMT cell at 10 and 18 GHz
2/ Large signal equivalent pHEMT output network
3/ Optimum load impedance for maximum power or maximum PAE at 10 and 18 GHz
4 The reflection coefficients for this device have been calculated from the scaled large signal Rp & Cp.
The series resistance and inductance (Rd and Ld) shown in the Figure on page 4 is excluded
TABLE IV
THERMAL INFORMATION
Parameter
θ
JC
Thermal Resistance
Test Conditions
T
CH
(
o
C)
145
T
JC
(qC/W)
69
T
M
(HRS)
1.6 E+6
Vd = 12 V
(channel to backside of carrier) Idq = 90 mA
Pdiss = 1.08 W
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 70°C baseplate temperature.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
3
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
