欢迎访问ic37.com |
会员登录 免费注册
发布采购

TGF2022-12 参数 Datasheet PDF下载

TGF2022-12图片预览
型号: TGF2022-12
PDF下载: 下载PDF文件 查看货源
内容描述: DC - 20 GHz的分立功率pHEMT制 [DC - 20 GHz Discrete power pHEMT]
分类和应用: 射频微波
文件页数/大小: 8 页 / 129 K
品牌: TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
 浏览型号TGF2022-12的Datasheet PDF文件第1页浏览型号TGF2022-12的Datasheet PDF文件第2页浏览型号TGF2022-12的Datasheet PDF文件第3页浏览型号TGF2022-12的Datasheet PDF文件第4页浏览型号TGF2022-12的Datasheet PDF文件第5页浏览型号TGF2022-12的Datasheet PDF文件第6页浏览型号TGF2022-12的Datasheet PDF文件第7页  
Advance Product Information
September19, 2005
TGF2022-12
Assembly Process Notes
Reflow process assembly notes:
Use AuSn (80/20) solder with limited exposure to temperatures at or above 300
°C
for 30 sec
An alloy station or conveyor furnace with reducing atmosphere should be used.
No fluxes should be utilized.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Devices with small pad sizes should be bonded with 0.0007-inch wire.
Maximum stage temperature is 200
°C.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
8