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VG36643241BT-8 参数 Datasheet PDF下载

VG36643241BT-8图片预览
型号: VG36643241BT-8
PDF下载: 下载PDF文件 查看货源
内容描述: CMOS同步动态RAM [CMOS Synchronous Dynamic RAM]
分类和应用:
文件页数/大小: 72 页 / 977 K
品牌: VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
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VIS
Basic Features and Function description
1. simplified State diagram
Preliminary
VG3664321(4)1(2)BT
CMOS Synchronous Dynamic RAM
Self
Refresh
try
en
LF
SE
Mode
Register
Set
MRS
IDLE
LF
SE
it
ex
REF
AUTO
Refresh
CK
E
E
CK
ROW
ACTIVE
BS
T
ACT
Power
Down
CKE
CKE
T
BS
Active
Power
Down
ad
Re
W
rit
e
Au Write
to p
red with
har
ge
h
wit rge
ad cha
Re Pre
to
Au
re
co
ve
r
y
Write (Write recovery)
Read
PRE
W
rit
e
WRITE
SUSPEND
CKE
CKE
WRITE
Read (write recovery)
Write
READ
CKE
CKE
READ
SUSPEND
Write with
Auto Precharge
R
Auto ead w
Pre ith
cha
rge
rge
cha
P re
E(
PR
(wri
te re
ith
e
ite w
charg
Wr
Pre
o
Aut
cov
ery)
ter
min
atio
n
)
Read with
Auto Precharge
WRITE A
SUSPEND
CKE
CKE
WRITE A
CKE
READ A
CKE
READA
SUSPEND
POWER
ON
Precharge
Precharge
Automatic sequence
Manual input
Note: After the AUTO refresh operation, precharge operation is
performed automatically and enter the IDLE state
Document : 1G5-0099
Rev.1
PR
E
(P r
ech
arg
e
m
ter
tio
ina
n)
Page 9