HUF75545P3, HUF75545S3, HUF75545S3S
Typical Performance Curves
600
I
AS
, AVALANCHE CURRENT (A)
(Continued)
600
I
D
, DRAIN CURRENT (A)
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
STARTING T
J
= 25
o
C
100
100µs
100
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
SINGLE PULSE
T
J
= MAX RATED
T
C
= 25
o
C
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1ms
10ms
STARTING T
J
= 150
o
C
1
100
200
10
0.001
0.01
0.1
1
10
t
AV
, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
150
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
150
V
GS
= 20V
V
GS
= 10V
I
D
, DRAIN CURRENT (A)
120
V
GS
= 7V
V
GS
= 6V
I
D,
DRAIN CURRENT (A)
120
90
90
V
GS
=5V
60
T
J
= 175
o
C
T
J
= 25
o
C
60
30
30
T
J
= -55
o
C
0
0
2
3
4
5
6
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
0
1
2
3
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
2.5
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
PULSE DURATION = 80µs V
GS
= 10V, I
D
= 75A
DUTY CYCLE = 0.5% MAX
2.0
NORMALIZED GATE
THRESHOLD VOLTAGE
1.2
V
GS
= V
DS
, I
D
= 250µA
1.0
1.5
0.8
1.0
0.6
0.5
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
0.4
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
©2002 Fairchild Semiconductor Corporation
HUF75545P3 / HUF75545S3 / HUF75545S3S Rev. C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
