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HUF75545P3 参数 Datasheet PDF下载

HUF75545P3图片预览
型号: HUF75545P3
PDF下载: 下载PDF文件 查看货源
内容描述: 75A , 80V , 0.010 Ohm的N通道, UltraFET功率MOSFET [75A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET]
分类和应用:
文件页数/大小: 10 页 / 266 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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HUF75545P3, HUF75545S3, HUF75545S3S
SABER Electrical Model
REV
21
may 1999
template huf75545 n2,n1,n3
electrical n2,n1,n3
{
var i iscl
d..model dbodymod = (is = 3.6e-12, cjo = 4.6e-9, tt = 3.3e-8, m = 0.55)
d..model dbreakmod = ()
d..model dplcapmod = (cjo = 4.8e-9, is = 1e-30, vj=1.0, m = 0.8 )
m..model mmedmod = (type=_n, vto = 3.04, kp = 6, is = 1e-30, tox = 1)
m..model mstrongmod = (type=_n, vto = 3.5, kp = 105, is = 1e-30, tox = 1)
m..model mweakmod = (type=_n, vto = 2.65, kp = 0.12, is = 1e-30, tox = 1)
sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -5, voff = -3)
sw_vcsp..model s1bmod = (ron =1e-5, roff = 0.1, von = -3, voff = -5)
sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = -1.5, voff = 0.5)
sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 0.5, voff = -1.5)
c.ca n12 n8 = 5.4e-9
c.cb n15 n14 = 5.3e-9
c.cin n6 n8 = 3.4e-9
d.dbody n7 n71 = model=dbodymod
d.dbreak n72 n11 = model=dbreakmod
d.dplcap n10 n5 = model=dplcapmod
i.it n8 n17 = 1
l.ldrain n2 n5 = 1e-9
l.lgate n1 n9 = 5.1e-9
l.lsource n3 n7 = 4.4e-9
GATE
1
RLGATE
LGATE
LDRAIN
DPLCAP
10
RSLC1
51
RSLC2
ISCL
RLDRAIN
RDBREAK
72
DBREAK
11
MWEAK
MMED
MSTRO
CIN
8
EBREAK
+
17
18
71
RDBODY
5
DRAIN
2
-
ESG
+
EVTEMP
RGATE + 18
-
22
9
20
6
6
8
EVTHRES
+ 19
-
8
50
RDRAIN
21
16
DBODY
-
RSOURCE
LSOURCE
7
RLSOURCE
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
S1A
S2A
14
13
S2B
13
+
EGS
6
8
EDS
CB
+
5
8
14
15
SOURCE
3
res.rbreak n17 n18 = 1, tc1 = 1.3e-3, tc2 = -1e-6
res.rdbody n71 n5 = 2.1e-3, tc1 = 1.5e-3, tc2 = 5.1e-6
res.rdbreak n72 n5 = 2.3e-1, tc1 = 0, tc2 = -1.8e-5
res.rdrain n50 n16 = 4.8e-3, tc1 = 9e-3, tc2 = 2.8e-5
res.rgate n9 n20 = 0.87
res.rldrain n2 n5 = 10
res.rlgate n1 n9 = 51
res.rlsource n3 n7 = 44
res.rslc1 n5 n51 = 1e-6, tc1 = 1.53e-3, tc2 = 2e-5
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 1.6e-3, tc1 = 1e-3, tc2 = 1e-6
res.rvtemp n18 n19 = 1, tc1 = -2.9e-3, tc2 = 5e-7
res.rvthres n22 n8 = 1, tc1 = -2.3e-3, tc2 = -1.2e-5
spe.ebreak n11 n7 n17 n18 = 87.4
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
spe.evthres n6 n21 n19 n8 = 1
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
12
13
8
S1B
RBREAK
17
18
RVTEMP
19
IT
CA
-
VBAT
+
-
-
8
RVTHRES
22
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/320))** 3))
}
}
©2002 Fairchild Semiconductor Corporation
HUF75545P3 / HUF75545S3 / HUF75545S3S Rev. C