HUF75545P3, HUF75545S3, HUF75545S3S
PSPICE Electrical Model
.SUBCKT HUF75545 2 1 3 ;
CA 12 8 5.4e-9
CB 15 14 5.3e-9
CIN 6 8 3.4e-9
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
10
rev 21 May 1999
LDRAIN
DPLCAP
5
RLDRAIN
DBREAK
11
+
EBREAK
MWEAK
MMED
MSTRO
CIN
LSOURCE
8
RSOURCE
RLSOURCE
S1A
12
S1B
CA
13
+
EGS
6
8
EDS
13
8
S2A
14
13
S2B
CB
+
5
8
14
IT
15
17
RBREAK
18
RVTEMP
19
7
SOURCE
3
17
18
DBODY
DRAIN
2
RSLC1
51
ESLC
50
RSLC2
5
51
-
ESG
6
8
+
LGATE
GATE
1
RLGATE
EVTEMP
RGATE + 18
-
22
9
20
EVTHRES
+ 19
-
8
6
IT 8 17 1
LDRAIN 2 5 1.0e-9
LGATE 1 9 5.1e-9
LSOURCE 3 7 4.4e-9
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 4.80e-3
RGATE 9 20 0.87
RLDRAIN 2 5 10
RLGATE 1 9 51
RLSOURCE 3 7 44
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 1.6e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A
S1B
S2A
S2B
6 12 13 8 S1AMOD
13 12 13 8 S1BMOD
6 15 14 13 S2AMOD
13 15 14 13 S2BMOD
-
-
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*320),3))}
.MODEL DBODYMOD D (IS = 3.6e-12 RS = 2.1e-3 TRS1 = 1.5e-3 TRS2 = 5.1e-6 CJO = 4.6e-9 TT = 3.3e-8 M = 0.55)
.MODEL DBREAKMOD D (RS = 2.3e-1 TRS1 = 0 TRS2 = -1.8e-5)
.MODEL DPLCAPMOD D (CJO = 4.8e-9 IS = 1e-30 N = 10 VJ = 1 M = 0.8)
.MODEL MMEDMOD NMOS (VTO = 3.04 KP = 6 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 0.87)
.MODEL MSTROMOD NMOS (VTO = 3.5 KP = 105 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 2.65 KP = 0.12 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 8.7 )
.MODEL RBREAKMOD RES (TC1 = 1.3e-3 TC2 = -1e-6)
.MODEL RDRAINMOD RES (TC1 = 9e-3 TC2 = 2.8e-5)
.MODEL RSLCMOD RES (TC1 = 1.53e-3 TC2 = 2e-5)
.MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 1e-6)
.MODEL RVTHRESMOD RES (TC1 = -2.3e-3 TC2 = -1.2e-5)
.MODEL RVTEMPMOD RES (TC1 = -2.9e-3 TC2 = 5e-7)
.MODEL S1AMOD VSWITCH (RON = 1e-5
.MODEL S1BMOD VSWITCH (RON = 1e-5
.MODEL S2AMOD VSWITCH (RON = 1e-5
.MODEL S2BMOD VSWITCH (RON = 1e-5
.ENDS
ROFF = 0.1
ROFF = 0.1
ROFF = 0.1
ROFF = 0.1
VON = -5 VOFF= -3)
VON = -3 VOFF= -5)
VON = -1.5 VOFF= 0.5)
VON = 0.5 VOFF= -1.5)
NOTE: For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options;
IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
©2002 Fairchild Semiconductor Corporation
+
-
EBREAK 11 7 17 18 87.4
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
RDRAIN
21
16
-
-
VBAT
+
8
22
RVTHRES
HUF75545P3 / HUF75545S3 / HUF75545S3S Rev. C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
