HUF75545P3, HUF75545S3, HUF75545S3S
Typical Performance Curves
1.2
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
I
D
= 250µA
1.1
C, CAPACITANCE (pF)
(Continued)
10000
C
ISS
=
C
GS
+ C
GD
C
OSS
≅
C
DS
+ C
GD
1.0
1000
0.9
C
RSS
=
C
GD
V
GS
= 0V, f = 1MHz
0.1
1
10
80
0.8
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
DD
= 40V
8
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
6
4
WAVEFORMS IN
DESCENDING ORDER:
I
D
= 75A
I
D
= 35A
0
30
60
Q
g
, GATE CHARGE (nC)
90
120
2
0
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
©2002 Fairchild Semiconductor Corporation
HUF75545P3 / HUF75545S3 / HUF75545S3S Rev. C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
