Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
BV
DSS
I
DSS
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Conditions
V
GS
= 0 V, I
D
= 250 µA
V
GS
= 0 V, I
D
= -250 µA
V
DS
= 24 V, V
GS
= 0 V
T
J
= 55°C
V
DS
= -24 V, V
GS
= 0 V
T
J
= 55°C
I
GSSF
I
GSSR
V
GS(th)
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
Gate Threshold Voltage
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250 µA
T
J
= 125°C
V
DS
= V
GS
, I
D
= -250 µA
T
J
= 125°C
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 4.8 A
T
J
= 125°C
V
GS
= 4.5 V, I
D
= 3.7 A
V
GS
= -10 V, I
D
= -4.8 A
T
J
= 125°C
V
GS
= -4.5 V, I
D
= -3.7 A
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
V
GS
= 10 V, V
DS
= 5 V
V
GS
= -10 V, V
DS
= -5 V
V
DS
= 10 V, I
D
= 4.8 A
V
DS
= -10 V, I
D
= -4.8 A
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
N-Channel
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
P-Channel
V
DS
= -15 V, V
GS
= 0 V,
f = 1.0 MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
720
690
370
430
250
160
pF
pF
pF
N-Ch
P-Ch
N-Ch
P-Ch
20
-20
10
7
S
P-Ch
N-Ch
P-Ch
All
All
N-Ch
1
0.7
-1
-0.7
1.6
1.2
-1.6
-1.2
0.033
0.046
0.046
0.052
0.075
0.085
P-Ch
Type
N-Ch
P-Ch
N-Ch
Min
30
-30
1
10
-1
-10
100
-100
2.8
2.2
-2.8
-2.2
0.035
0.063
0.05
0.065
0.13
0.1
A
Typ
Max
Units
V
V
µA
µA
µA
µA
nA
nA
V
OFF CHARACTERISTICS
ON CHARACTERISTICS
(Note 3)
Ω
NDS8858H Rev. C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
