Specifications RFD3055, RFD3055SM, RFP3055
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
LIMITS
PARAMETER
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
TEST CONDITIONS
I
D
= 0.25mA, V
GS
= 0V
V
GS
= V
DS
, I
D
= 0.25mA
V
DS
= 60V,
V
GS
= 0V
V
GS
=
±20V
I
D
= 12A, V
GS
= 10V
V
DD
= 30V, I
D
= 12A
R
L
= 2.5Ω, V
GS
= +10V
R
GS
= 10Ω
T
C
= +25
o
C
T
C
= +150
o
C
MIN
60
2
-
-
-
-
-
-
-
-
-
-
V
GS
= 0 to 20V
V
GS
= 0 to 10V
V
GS
= 0 to 2V
I
D
= 12A, V
DS
= 15V
V
DS
= 25V, V
GS
= 0V
f = 1MHz
V
DD
= 48V,
I
D
= 12A,
R
L
= 4Ω
-
-
-
-
-
-
-
-
TO-251 and TO-252 Package
TO-220 Package
-
-
TYP
-
-
-
-
-
-
-
7
21
16
10
-
19
10
0.6
-
300
100
30
-
-
-
MAX
-
4
1
50
100
0.150
40
-
-
-
-
40
23
12
0.8
7.5
-
-
-
2.8
100
80
UNITS
V
V
µA
µA
nA
W
ns
ns
ns
ns
ns
ns
nC
nC
nC
V
pF
pF
pF
o
C/W
o
C/W
o
Gate-Source Leakage Current
On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Plateau Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
I
GSS
r
DS(ON)
t
ON
t
D(ON)
t
R
t
D(OFF)
t
F
t
OFF
Q
G(TOT)
Q
G(10)
Q
G(TH)
V
(PLATEAU)
C
ISS
C
OSS
C
RSS
R
θJC
R
θJA
C/W
Source-Drain Diode Ratings and Characteristics
LIMITS
PARAMETER
Forward Voltage
Reverse Recovery Time
SYMBOL
V
SD
t
RR
TEST CONDITIONS
I
SD
= 12A
I
SD
= 12A, dI
SD
/dt = 100A/µs
MIN
-
-
TYP
-
-
MAX
1.5
100
UNITS
V
ns
2
HARRIS [ HARRIS CORPORATION ]
