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RFD3055SM 参数 Datasheet PDF下载

RFD3055SM图片预览
型号: RFD3055SM
PDF下载: 下载PDF文件 查看货源
内容描述: 12A , 60V ,额定雪崩, N沟道增强型功率MOSFET ( MegaFETs ) [12A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs (MegaFETs)]
分类和应用: 晶体晶体管开关
文件页数/大小: 8 页 / 118 K
品牌: HARRIS [ HARRIS CORPORATION ]
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RFD3055, RFD3055SM, RFP3055
Typical Performance Curves
2.5
(Continued)
V
GS
= V
DS
, I
D
= 250µA
2.0
PULSE DURATION = 250µs, V
GS
= 10V, I
D
= 12A
2.0
NORMALIZED R
DS(ON)
NORMALIZED V
GS(TH)
1.5
1.5
1.0
1.0
0.5
0.5
0.0
-80
-40
0
40
80
120
160
T
J,
JUNCTION TEMPERATURE (
o
C)
200
0.0
-80
-40
0
40
80
120
160
T
J,
JUNCTION TEMPERATURE (
o
C)
200
FIGURE 7. NORMALIZED R
DS(ON)
vs JUNCTION
TEMPERATURE
2.0
I
D
= 250µA
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
TEMPERATURE
1.2
POWER DISSIPATION MULTIPLIER
1.0
NORMALIZED BV
DSS
1.5
0.8
1.0
0.6
0.4
0.5
0.2
0.0
-80
0.0
-40
0
80
120
160
40
o
C)
T
J,
JUNCTION TEMPERATURE (
200
0
25
50
75
100
125
(
o
C)
150
175
T
C
, CASE TEMPERATURE
FIGURE 9. NORMALIZED DRAIN SOURCE BREAKDOWN
VOLTAGE vs TEMPERATURE
600
V
GS
= 0V, f = 1MHz
FIGURE 10. NORMALIZED POWER DISSIPATION vs
TEMPERATURE DERATING CURVE
60
V
DS,
DRAIN SOURCE VOLTAGE (V)
V
DD
= BV
DSS
45
10
V
GS,
GATE-SOURCE VOLTAGE (V)
V
DD
= BV
DSS
7.5
C, CAPACITANCE (pF)
400
C
ISS
30
0.75 BV
DSS
0.50 BV
DSS
15
0.25 BV
DSS
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
5.0
200
C
OSS
2.5
C
RSS
0
0
0
5
10
15
20
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
25
I
G(REF)
20
I
G(ACT)
R
L
= 5Ω
I
G(REF)
= 0.24mA
V
GS
= 10V
0
t, TIME (µs)
I
G(REF)
80
I
G(ACT)
FIGURE 11. TYPICAL CAPACITANCE vs VOLTAGE
FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT. REFER TO
APPLICATION NOTE AN7254 AND AN7260
4