RFD3N08L, RFD3N08LSM
Data Sheet
July 1999
File Number
2836.4
3A, 80V, 0.800 Ohm, Logic Level,
N-Channel Power MOSFETs
The RFD3N08L and RFD3N08LSM are N-Channel
enhancement mode silicon gate power field effect transistors
specifically designed for use with logic level (5V) driving
sources in applications such as programmable controllers,
automotive switching, and solenoid drivers. This
performance is accomplished through a special gate oxide
design which provides full rated conductance at gate biases
in the 3V to 5V range, thereby facilitating true on-off power
control directly from logic circuit supply voltages.
Formerly developmental type TA09922.
Features
• 3A, 80V
• r
DS(ON)
= 0.800Ω
• Temperature Compensating PSPICE
®
Model
• On Resistance vs Gate Drive Voltage Curves
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175
o
C Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
BRAND
Ordering Information
PART NUMBER
RFD3N08L
RFD3N08LSM
PACKAGE
TO-251AA
TO-252AA
F3N08L
F3N08L
Symbol
D
NOTE: When ordering, include the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in tape and reel, i.e. RFD3N08LSM9A
G
S
Packaging
JEDEC TO-251AA
SOURCE
DRAIN
GATE
GATE
SOURCE
JEDEC TO-252AA
DRAIN
(FLANGE)
DRAIN
(FLANGE)
6-26
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
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Copyright
©
Intersil Corporation 1999
INTERSIL [ INTERSIL CORPORATION ]
