RFD3N08L, RFD3N08LSM
o
Absolute Maximum Ratings
T = 25 C, Unless Otherwise Specified
C
RFD3N08L,
RFD3N08LSM
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
80
80
±10
3
V
V
V
A
DS
Drain to Gate Voltage (R
= 20KΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Figures 3, 5) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Refer to Peak Current Curve
DM
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
Derate Above 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
30
0.2
W
W/ C
D
o
o
Pulsed Avalanche Energy Rating (Figure 6) (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . .E
Refer to UIS Curve
-55 to 175
AS
o
Operating and Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . .T , T
C
J
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
o
300
260
C
C
L
o
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
o
o
1. T = 25 C to 150 C.
J
o
Electrical Specifications
T
= 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
TEST CONDITIONS
= 250µA, V = 0V (Figure 12)
MIN
TYP
MAX
-
UNITS
V
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
BV
DSS
I
80
1
-
-
-
-
-
D
GS
V
V
= V , I = 250µA (Figure 11)
2.5
25
V
GS(TH)
GS
DS
D
Zero Gate Voltage Drain Current
I
V
= Rated BV
, V
DSS GS
= 0V
µA
µA
DSS
DS
DS
V
V
= 0.8 x Rated BV
,
-
250
DSS
o
= 0V 125 C
GS
Gate to Source Leakage Current
I
V
= ±10V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
±100
0.800
75
nA
Ω
GSS
GS
Drain to Source On Resistance (Note 2)
Turn-On Time
r
I
= 3A, V
= 5V, (Figures 9, 10)
= 40V, I = 3A,
DS(ON)
D GS
t
V
R
R
-
ns
ns
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
(ON)
DD
D
= 13.3Ω, V
= 25Ω,
= 5V,
L
GS
Turn-On Delay Time
t
15
45
22
15
-
-
d(ON)
G
Rise Time
t
(Figures 13, 15, 18, 19)
-
r
Turn-Off Delay Time
t
-
d(OFF)
Fall Time
t
-
f
Turn-Off Time
t
45
(OFF)
Total Gate Charge
Q
V
= 0V to 10V
= 0V to 5V
= 0V to 1V
GS
V
= 64V, I = 3A,
= 0.1mA
= 21.3Ω
6.8
3.8
0.18
-
8.5
4.8
0.24
125
55
g(TOT)
GS
DD
D
I
g(REF)
Gate Charge at 5V
Q
V
GS
g(5)
R
L
Threshold Gate Charge
Input Capacitance
Q
V
(Figures 15, 20, 21)
g(TH)
C
V
= 25V, V
GS
= 0V, f = 1MHz,
ISS
OSS
RSS
DS
(Figure 14)
Output Capacitance
C
C
-
Reverse Transfer Characterisics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
-
15
o
R
-
5.0
100
C/W
θJC
θJA
o
R
-
C/W
Source to Drain Diode Ratings and Specifications
PARAMETER
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
NOTES:
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
1.25
85
UNITS
V
V
I
= 3A
SD
-
-
-
-
SD
t
I
= 3A, dI /dt = 100A/µs
SD SD
ns
rr
2. Pulsed: pulse duration = 300µs max, duty cycle = 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. Refer to Intersil Application Notes AN9321 and AN9322.
6-27
INTERSIL [ Intersil ]
