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RFD3N08LSM 参数 Datasheet PDF下载

RFD3N08LSM图片预览
型号: RFD3N08LSM
PDF下载: 下载PDF文件 查看货源
内容描述: 3A , 80V , 0.800欧姆,逻辑电平, N沟道功率MOSFET [3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs]
分类和应用: 晶体晶体管开关
文件页数/大小: 8 页 / 72 K
品牌: INTERSIL [ Intersil ]
 浏览型号RFD3N08LSM的Datasheet PDF文件第1页浏览型号RFD3N08LSM的Datasheet PDF文件第2页浏览型号RFD3N08LSM的Datasheet PDF文件第3页浏览型号RFD3N08LSM的Datasheet PDF文件第4页浏览型号RFD3N08LSM的Datasheet PDF文件第6页浏览型号RFD3N08LSM的Datasheet PDF文件第7页浏览型号RFD3N08LSM的Datasheet PDF文件第8页  
RFD3N08L, RFD3N08LSM  
Typical Performance Curves Unless Otherwise Specified (Continued)  
2.0  
1.5  
1.0  
0.5  
0
100  
80  
60  
40  
20  
0
I
= 250µA  
D
V
= 40V, I = 3A, R = 13.3Ω  
D L  
DD  
t
r
t
f
t
t
d(OFF)  
d(ON)  
0
10  
20  
, GATE TO SOURCE RESISTANCE ()  
GS  
30  
40  
50  
-80  
-40  
0
40  
80  
120  
160  
200  
o
T , JUNCTION TEMPERATURE ( C)  
R
J
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN  
VOLTAGE vs JUNCTION TEMPERATURE  
FIGURE 13. SWITCHING TIME vs GATE RESISTANCE  
5.00  
80  
60  
40  
20  
0
180  
V
= 0V, f = 1MHz  
GS  
ISS  
C
C
C
= C  
+ C  
C
GS  
= C  
GD  
ISS  
150  
120  
90  
60  
30  
0
RSS  
OSS  
GD  
C  
+ C  
GD  
DS  
3.75  
2.50  
1.25  
0
R
= 26.67Ω  
L
I
V
= 0.1mA  
G(REF)  
= 5V  
C
OSS  
GS  
PLATEAU VOLTAGES IN  
DESCENDING ORDER:  
V
V
V
V
= BV  
DD  
DD  
DD  
DD  
DSS  
= 0.75 BV  
= 0.50 BV  
DSS  
DSS  
DSS  
C
RSS  
= 0.25BV  
I
I
I
I
G(REF)  
G(ACT)  
G(REF)  
G(ACT)  
0
5
10  
15  
20  
25  
20  
80  
t, TIME (µs)  
V
, DRAIN TO SOURCE VOLTAGE (V)  
DS  
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.  
FIGURE 15. NORMALIZED SWITCHING WAVEFORMS FOR  
CONSTANT GATE CURRENT  
FIGURE 14. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE  
Test Circuits and Waveforms  
V
DS  
BV  
DSS  
L
t
P
V
DS  
I
VARY t TO OBTAIN  
P
AS  
+
-
V
DD  
R
REQUIRED PEAK I  
G
AS  
V
DD  
V
GS  
DUT  
t
P
I
AS  
0V  
0
0.01Ω  
t
AV  
FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT  
FIGURE 17. UNCLAMPED ENERGY WAVEFORMS  
6-30