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RFD3N08LSM 参数 Datasheet PDF下载

RFD3N08LSM图片预览
型号: RFD3N08LSM
PDF下载: 下载PDF文件 查看货源
内容描述: 3A , 80V , 0.800欧姆,逻辑电平, N沟道功率MOSFET [3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs]
分类和应用: 晶体晶体管开关
文件页数/大小: 8 页 / 72 K
品牌: INTERSIL [ Intersil ]
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RFD3N08L, RFD3N08LSM  
PSPICE Electrical Model  
SUBCKT RFD3N08L 2 1 3 ;  
rev 5/10/95  
CA 12 8 4.10e-10  
CB 15 14 3.25e-10  
CIN 6 8 1.10e-10  
LDRAIN  
DPLCAP  
5
DRAIN  
2
10  
DBODY 7 5 DBDMOD  
DBREAK 5 11 DBREAKMOD  
DPLCAP 10 5 DPLCAPMOD  
RLDRAIN  
RSCL1  
51  
+
RSCL2  
5
DBREAK  
11  
EBREAK 11 7 17 18 93.57  
EDS 14 8 5 8 1  
EGS 13 8 6 8 1  
ESG 6 10 6 8 1  
EVTHRESH 6 21 19 8 1  
EZTEMPCO 20 6 18 22 1  
ESCL  
51  
50  
RDRAIN  
6
+
DBODY  
ESG  
16  
17  
18  
8
EBREAK  
+
EVTHRESH  
+
IT 8 17 1  
19  
8
LGATE  
EZTEMPCO  
20  
MOS2  
21  
GATE  
1
9
LDRAIN 2 5 1e-9  
LGATE 1 9 5.8e-9  
LSOURCE 3 7 5.8e-9  
+
6
18  
22  
MOS1  
RGATE  
RLGATE  
CIN  
RIN  
LSOURCE  
MOS1 16 6 8 8 MSTRONG M = 0.80  
MOS2 16 21 8 8 MWEAK M = 0.20  
RSOURCE  
8
7
3
SOURCE  
RLSOURCE  
RBREAK 17 18 RBREAKMOD 1  
RDRAIN 50 16 RDRAINMOD 174.2e-3  
RGATE 9 20 24.9  
RIN 6 8 1e9  
RLDRAIN 2 5 10  
S1A  
12  
S2A  
RBREAK  
13 14  
15  
18  
17  
8
13  
S1B  
CA  
S2B  
13  
RLGATE 1 9 58  
RLSOURCE 3 7 58  
RZTEMPCO  
IT  
CB  
19  
VBAT  
RSCL1 5 51 RSCLMOD 1e-6  
RSCL2 5 50 1e3  
RSOURCE 8 7 RSOURCEMOD 200.2e-3  
RTHRESH 22 8 RTHRESHMOD 1  
RZTEMPCO 18 19 RZTEMPCOMOD 1  
14  
+
+
6
8
5
8
EDS  
EGS  
+
22  
RTHRESH  
S1A 6 12 13 8 S1AMOD  
S1B 13 12 13 8 S1BMOD  
S2A 6 15 14 13 S2AMOD  
S2B 13 15 14 13 S2BMOD  
VBAT 22 19 DC 1  
ESCL 51 50 VALUE = {(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*10),6))}  
.MODEL DBDMOD D (IS = 9.90e-14 RS = 6.00e-2 TRS1 = 1.42e-3 TRS2 = -3.58e-6 CJO = 1.40e-10 TT = 5.75e-8 M = 0.4)  
.MODEL DBREAKMOD D (RS = 2.32 TRS1 = 1.03e-3 TRS2 = -6.17e-11)  
.MODEL DPLCAPMOD D (CJO = 1.13e-10 IS = 1e-30 N = 10 M=0.6)  
.MODEL MSTRONG NMOS (VTO = 1.773 KP = 1.70 IS = 1e-30 N = 10 TOX = 1L = 1u W = 1u)  
.MODEL MWEAK NMOS (VTO = 1.496 KP = 2.09 IS = 1e-30 N = 10 TOX = 1L = 1u W = 1u)  
.MODEL RBREAKMOD RES (TC1 = 8.19e-4 TC2 = 5.9e-7)  
.MODEL RDRAINMOD RES (TC1 = 1.55e-2 TC2 = 8.58e-5)  
.MODEL RDSOURCEMOD RES (TC1 = 0 TC2 = 0)  
.MODEL RSCLMOD RES (TC1 = 0 TC2 = 0)  
.MODEL RTHRESHMOD RES (TC1 = -5.0e-4 TC2 = -6.0e-6)  
.MODEL RZTEMPCOMOD RES (TC1 = -1.19e-3 TC2 = 1.12e-6)  
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -5.2 VOFF= -3.2)  
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -3.2 VOFF= -5.2)  
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.60 VOFF= 4.4)  
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 4.4 VOFF= -0.60)  
.ENDS  
NOTE:  
1. For further discussion of the PSPICE model, consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global Temperature Options; IEEE  
Power Electronics Specialist Conference Records, 1991.  
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