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RFD3N08LSM 参数 Datasheet PDF下载

RFD3N08LSM图片预览
型号: RFD3N08LSM
PDF下载: 下载PDF文件 查看货源
内容描述: 3A , 80V , 0.800欧姆,逻辑电平, N沟道功率MOSFET [3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs]
分类和应用: 晶体晶体管开关
文件页数/大小: 8 页 / 72 K
品牌: INTERSIL [ Intersil ]
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RFD3N08L, RFD3N08LSM  
Typical Performance Curves Unless Otherwise Specified (Continued)  
20  
10  
If R = 0  
= (L)(I )/(1.3*RATED BV  
DSS  
PULSE DURATION = 80µs  
t
- V )  
DD  
V
= 10V  
AV  
10 If R 0  
= (L/R)ln[(I *R)/(1.3*RATED BV - V ) +1]  
DSS DD  
AS  
GS  
DUTY CYCLE = 0.5% MAX  
o
T
= 25 C  
C
t
8
AV  
AS  
o
STARTING T = 25 C  
J
6
V
= 5V  
GS  
V
= 4.5V  
GS  
4
o
STARTING T = 150 C  
J
V
= 4V  
GS  
V
= 3.5V  
GS  
2
V
= 3V  
GS  
1
0
0.001  
0.01  
0.1  
1
0
2
V
4
6
8
10  
t
, TIME IN AVALANCHE (ms)  
AV  
, DRAIN TO SOURCE VOLTAGE (V)  
DS  
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.  
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY  
FIGURE 7. SATURATION CHARACTERISTICS  
10  
2.5  
2
PULSE DURATION = 80µs  
DUTY CYCLE = 0.5% MAX  
I
= 4A  
D
V
= 15V  
DD  
8
o
I
= 3A  
-55 C  
D
1.5  
1
6
4
2
0
I
= 1.5A  
o
D
25 C  
o
175 C  
I
= 0.75A  
D
0.5  
0
PULSE DURATION = 80µs  
DUTY CYCLE = 0.5% MAX  
V
= 15V  
DD  
2
2.5  
3
3.5  
4
4.5  
5
0
1.5  
3
4.5  
6
7.5  
V
, GATE TO SOURCE VOLTAGE (V)  
V
, GATE TO SOURCE VOLTAGE (V)  
GS  
GS  
FIGURE 8. TRANSFER CHARACTERISTICS  
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE  
VOLTAGE AND DRAIN CURRENT  
3
2.5  
2
2
PULSE DURATION = 80µs  
DUTY CYCLE = 0.5% MAX  
V
= V , I = 250µA  
DS  
GS  
D
V
= 5V, I = 3A  
GS  
D
1.5  
1.5  
1
1
0.5  
0.5  
0
0
-80  
-80  
-40  
0
40  
80  
120  
160  
200  
-40  
0
40  
80  
120  
160  
200  
o
o
T , JUNCTION TEMPERATURE ( C)  
T , JUNCTION TEMPERATURE ( C)  
J
J
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON  
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs  
JUNCTION TEMPERATURE  
RESISTANCE vs JUNCTION TEMPERATURE  
6-29