MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MUS2B
10
Pin-Po CHARACTERISTICS @f=175MHz
100
Po
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W
TYPICAL CHARACTERISTICS
(These are only typical curves and devices are not necessarily guaranteed at these curves.)
50
Pin-Po CHARACTERISTICS @f=175MHz
Po
Po(dBm) , Gp(dB) , Idd(A)
40
ηd
80
Pout(W) , Idd(A)
8
ηd
Ta=+25°C
f=175MHz
Vdd=7.2V
Idq=250mA
Idd
100
80
30
60
ηd(%)
6
60
ηd(%)
40
20
0
0.8
100
80
60
40
20
0
0.8
100
80
60
40
20
0
0.8
20
Ta=+25°C
f=175MHz
Vdd=7.2V
Idq=250mA
0
5
10
15
20
Pin(dBm)
Gp
40
4
10
20
Idd
0
25
30
2
0
0
0
0.2
0.4
Pin(W)
0.6
50
Pin-Po CHARACTERISTICS @f=527MHz
100
Ta=+25°C
f=527MHz
Vdd=7.2V
Idq=250mA
Po
80
10
Pin-Po CHARACTERISTICS @f=527MHz
Po
Po(dBm) , Gp(dB) , Idd(A)
40
8
Pout(W) , Idd(A)
30
ηd(%)
20
Gp
40
4
Idd
Ta=+25°C
f=527MHz
Vdd=7.2V
Idq=250mA
10
Idd
0
0
5
10
15
20
Pin(dBm)
25
30
20
2
0
0
0.0
0.2
0.4
Pin(W)
0.6
50
Pin-Po CHARACTERISTICS @f=870MHz
Ta=+25°C
f=870MHz
Vdd=7.2V
Idq=250mA
100
10
Pin-Po CHARACTERISTICS @f=870MHz
Po(dBm) , Gp(dB) , Idd(A)
40
Po
80
Pout(W) , Idd(A)
8
Po
30
η
�½�
20
Gp
10
Idd
0
0
5
10
15
20
Pin(dBm)
25
30
60
ηd(%)
6
ηd
4
Idd
Ta=+25°C
f=870MHz
Vdd=7.2V
Idq=250mA
40
20
2
0
0
0.0
0.2
0.4
Pin(W)
0.6
RD07MUS2B
MITSUBISHI ELECTRIC
4/14
9 Sep 2009
ηd(%)
ηd(%)
ηd
60
6
ηd
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
