Philips Semiconductors
2N7002E
N-channel TrenchMOS™ FET
2.4
V
GS(th)
(V)
typ
1.8
03aa34
10
-1
I
D
(A)
10
-2
03aa37
10
-3
1.2
min
10
-4
min
typ
0.6
10
-5
0
-60
10
-6
0
60
120
T
j
(
°
C)
180
0
0.6
1.2
1.8
V
GS
(V)
2.4
I
D
= 1 mA; V
DS
= V
GS
T
j
= 25
°C;
V
DS
= 5 V
Fig 9. Gate-source threshold voltage as a function of
junction temperature
10
2
03ai18
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
03ai17
0.8
I
S
(A)
C
(pF)
0.6
C
iss
10
C
oss
0.4
C
rss
0.2
150
°C
T
j
= 25
°C
1
10
-1
1
10
V
DS
(V)
10
2
0
0
0.4
0.8
V
SD
(V)
1.2
V
GS
= 0 V; f = 1 MHz
T
j
= 25
°C
and 150
°C;
V
GS
= 0 V
Fig 11. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values
9397 750 14944
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 26 April 2005
7 of 11
PHILIPS [ NXP SEMICONDUCTORS ]
