Philips Semiconductors
2N7002E
N-channel TrenchMOS™ FET
1
I
D
(A)
0.8
03ai12
T
j
= 25
°C
V
GS
(V) =
10
7
6
5
4.5
6
V
GS
(V) =
R
DSon
(Ω)
4
03ai14
3.5
4
T
j
= 25
°C
4.5
5
6
7
10
0.6
4
0.4
3.5
2
0.2
3
2.5
0
0
0.8
1.6
2.4
V
DS
(V)
3.2
0
0
0.2
0.4
0.6
0.8
I
D
(A)
1
T
j
= 25
°C
T
j
= 25
°C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
03ai16
Fig 6. Drain-source on-state resistance as a function
of drain current; typical values
2.4
a
1.8
03aa28
0.8
I
D
(A)
0.6
150
°C
T
j
= 25
°C
0.4
1.2
0.2
0.6
0
0
2
4
V
GS
(V)
6
0
-60
0
60
120
T
j
(
°
C)
180
T
j
= 25
°C
and 150
°C;
V
DS
> I
D
×
R
DSon
R
DSon
a
=
-----------------------------
-
R
DSon
(
25
°
C
)
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
9397 750 14944
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 26 April 2005
6 of 11
PHILIPS [ NXP SEMICONDUCTORS ]
