Philips Semiconductors
2N7002E
N-channel TrenchMOS™ FET
6. Characteristics
Table 5:
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown voltage
I
D
= 10
µA;
V
GS
= 0 V
T
j
= 25
°C
T
j
=
−55 °C
V
GS(th)
gate-source threshold voltage
I
D
= 1 mA; V
DS
= V
GS
;
and
T
j
= 25
°C
T
j
= 150
°C
T
j
=
−55 °C
I
DSS
drain-source leakage current
V
DS
= 48 V; V
GS
= 0 V
T
j
= 25
°C
T
j
= 150
°C
I
GSS
R
DSon
gate-source leakage current
drain-source on-state resistance
V
GS
=
±15
V; V
DS
= 0 V
V
GS
= 10 V; I
D
= 500 mA;
and
T
j
= 25
°C
T
j
= 150
°C
V
GS
= 4.5 V; I
D
= 75 mA;
and
8
Dynamic characteristics
g
fs
C
iss
C
oss
C
rss
t
on
t
off
V
SD
t
rr
Q
r
forward transconductance
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
turn-off delay time
source-drain (diode forward) voltage
reverse recovery time
recovered charge
V
DD
= 50 V; R
L
= 250
Ω;
V
GS
= 10 V;
R
G
= 50
Ω;
R
GS
= 50
Ω
V
DS
= 10 V; I
D
= 200 mA
V
GS
= 0 V; V
DS
= 10 V; f = 1 MHz;
100
-
-
-
-
-
-
-
-
300
25
18
7.5
3
12
0.85
30
30
-
40
30
10
10
15
1.5
-
-
mS
pF
pF
pF
ns
ns
V
ns
nC
-
-
-
2.3
4.2
3.1
3
5.55
4
Ω
Ω
Ω
-
-
-
0.01
-
10
1
10
100
µA
µA
nA
1
0.6
-
2
-
-
3
-
3.5
V
V
V
60
55
-
-
-
-
V
V
Conditions
Min
Typ
Max
Unit
Source-drain diode
I
S
= 300 mA; V
GS
= 0 V;
I
S
= 300 mA; dI
S
/dt =
−100
A/µs;
V
GS
= 0 V
9397 750 14944
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 26 April 2005
5 of 11
PHILIPS [ NXP SEMICONDUCTORS ]
