2N7002E
Philips Semiconductors
N-channel TrenchMOS™ FET
5. Thermal characteristics
Table 4:
Thermal characteristics
Symbol Parameter
Conditions
Min
Typ
Max Unit
Rth(j-sp) thermal resistance from junction to solder point
Figure 4
-
-
-
-
150
350
K/W
K/W
Rth(j-a)
thermal resistance from junction to ambient
mounted on a printed-circuit
board; minimum footprint;
vertical in still air
03ai09
103
Zth(j-sp)
K/W
102
10
δ = 0.5
0.2
0.1
0.05
0.02
tp
T
P
δ =
1
single pulse
t
tp
T
10-1
10-5
10-4
10-3
10-2
10-1
1
10
tp (s)
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration
9397 750 14944
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 26 April 2005
4 of 11
NXP [ NXP ]
