RQK0204TGDQA
Silicon N Channel MOS FET
Power Switching
REJ03G1324-0300
Rev.3.00
Jun 12, 2006
Features
•
Low on-resistance
R
DS(on)
= 100 mΩ typ (V
GS
= 4.5 V, I
D
= 1.2 A)
•
Low drive current
•
High speed switching
•
2.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
D
3
1
2
2
G
1. Source
2. Gate
3. Drain
S
1
Note:
Marking is “TG”.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
V
DSS
Gate to source voltage
V
GSS
Drain current
I
D
Note1
Drain peak current
I
D(pulse)
Body - drain diode reverse drain current
I
DR
Channel dissipation
Pch
Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)
Ratings
20
±12
2.3
8.0
2.3
0.8
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
Rev.3.00 Jun 12, 2006 page 1 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
