RQK0204TGDQA
Drain to Source Saturation Voltage
V
DS(on)
(mV)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
500
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
R
DS(on)
(m
Ω
)
Pulse Test
Tc = 25°C
1000
Pulse Test
Tc = 25°C
400
300
2.3 A
1.2 A
0.8 A
V
GS
= 2.5 V
100
4.5 V
10 V
200
100
0.5 A
0
0
2
4
6
8
10
10
0.1
1
10
Gate to Source Voltage
V
GS
(V)
Static Drain to Source on State Resistance
vs. Case Temperature
Drain Current
I
D
(A)
Static Drain to Source on State Resistance
vs. Case Temperature
Drain to Source on State Resistance
R
DS(on)
(m
Ω
)
Drain to Source on State Resistance
R
DS(on)
(m
Ω
)
300
I
D
= 2.3 A
1.2 A
200
200
Pulse Test
V
GS
= 4.5 V
I
D
= 2.3 A
150
1.2 A
250
150
0.5 A
100
50
–25
0.8 A
100
0.5 A
0.8 A
Pulse Test
V
GS
=
2
.5 V
0
25
50
75
100 125 150
50
–25
0
25
50
75
100 125 150
Case Temperature
Tc (
°
C)
Case Temperature
Tc (
°
C)
Zero Gate Voltage Drain current vs.
Case Temperature
10000
Pulse Test
V
GS
= 0 V
1000 V
DS
= 20 V
100
Forward Transfer Admittance
|yfs| (S)
10
Pulse Test
V
DS
= 10 V
–25°C
1
25°C
Tc = 75°C
0.1
Zero Gate Voltage Drain current
I
DSS
(nA)
Forward Transfer Admittance vs.
Drain Current
10
1
0.1
–25
0.01
0.01
0.1
1
10
0
25
50
75
100 125 150
Drain Current
I
D
(A)
Case Temperature
Tc (
°
C)
Rev.3.00 Jun 12, 2006 page 4 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
