RQK0204TGDQA
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Drain to source leak current
Gate to source cutoff voltage
Drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body - drain diode forward voltage
Notes: 3. Pulse test
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
Min
20
±12
—
—
0.4
—
—
1.5
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
100
146
3.0
127
33
14
11
28
24
7
1.5
0.3
0.4
0.85
Max
—
—
±10
1
1.4
130
204
—
—
—
—
—
—
—
—
—
—
—
1.1
Unit
V
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±10
V, V
DS
= 0
V
DS
= 20 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 1.2 A, V
GS
= 4.5 V
Note3
I
D
= 1.2 A, V
GS
= 2.5 V
Note3
I
D
= 1.2 A, V
DS
= 10 V
Note3
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
I
D
= 1.2 A
V
GS
= 10 V
R
L
= 8.3
Ω
Rg = 4.7
Ω
V
DD
= 10 V
V
GS
= 5 V
I
D
= 2.3 A
I
F
= 2.3 A, V
GS
= 0
Note3
Rev.3.00 Jun 12, 2006 page 2 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
