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RQK0204TGDQATL-E 参数 Datasheet PDF下载

RQK0204TGDQATL-E图片预览
型号: RQK0204TGDQATL-E
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET电源开关 [Silicon N Channel MOS FET Power Switching]
分类和应用: 开关电源开关
文件页数/大小: 7 页 / 102 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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RQK0204TGDQA
Main Characteristics
Maximum Channel Power
Dissipation Curve
1
100
Operation in this area
is limited by R
DS(on)
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current I
D
(A)
0.8
10
1
m
10
0
10
µ
s
0.6
s
PW
m
s
1
D
=
C
0
10
0.4
O
pe
s
m
ra
tio
0.2
0
0.1
Ta = 25°C
1 Shot Pulse
n
0
50
100
150
0.01
0.01
0.1
1
10
100
Ambient Temperature Ta (°C)
*When using the glass epoxy board (FR-4: 40
×
40
×
1 mm)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
8
10 V
7V
5V
Pulse Test
Tc = 25
°
C
Typical Transfer Characteristics
(1)
8
V
DS
= 10 V
Pulse Test
25°C
3.0 V
Drain Current I
D
(A)
6
Drain Current I
D
(A)
2.8 V
2.6 V
2.4 V
2.2 V
2.0 V
3.2 V
3.4 V
5V
6
Tc = –25°C
75°C
4
4
2
1.8 V
1.6 V
2
0
V
GS
= 0 V
0
2
4
6
8
10
0
0
1
2
3
4
5
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Gate to Source Cutoff Voltage vs.
Typical Transfer Characteristics
(2)
1
V
DS
= 10 V
Pulse Test
Case Temperature
Gate to Source Cutoff Voltage
V
GS(off)
(V)
1.5
V
DS
= 10 V
Pulse Test
I
D
= 10 mA
1.0
Drain Current I
D
(A)
0.1
Tc = 75°C
0.01
25°C
0.5
1 mA
0.1 mA
0.001
–25°C
0.0001
0
0.5
1
1.5
2
2.5
3
0
–25
0
25
50
75
100 125 150
Gate to Source Voltage V
GS
(V)
Case Temperature Tc (°C)
Rev.3.00 Jun 12, 2006 page 3 of 6