RQK0204TGDQA
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
40
16
1000
Switching Characteristics
V
DD
= 10 V
V
GS
= 4.5 V
Rg = 4.7
Ω
PW = 5
µs
Tc = 25°C
tr
30
12
10 V
5V
20
V
DD
= 20 V
10 V
10
5V
V
DS
0
1
2
I
D
= 2.3 A
Tc = 25°C
3
4
0
4
V
GS
8
Switching Time
t (ns)
V
DD
= 20 V
100
td(off)
10
td(on)
tf
0
1
0.1
1
10
Gate Charge Qg (nc)
Drain Current
I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
1000
250
240
Input Capacitance vs.
Gate to Source Voltage
Ciss, Coss, Crss (pF)
Ciss
100
Coss
Crss
10
V
GS
= 0 V
f = 1 MHz
230
Ciss (pF)
220
210
200
190
180
170
V
DS
= 0 V
f = 1 MHz
0
2
4
6
8
10
1
0
5
10
15
20
–
10
–
8
–
6
–
4
–
2
Drain to Source Voltage
V
DS
(V)
Reverse Drain Current vs.
Source to Drain Voltage
8
Gate to Source Voltage V
GS
(V)
Body-Drain Diode Forward Voltage vs.
Case Temperature
0.7
V
GS
= 0
0.6
0.5
I
D
= 10 mA
0.4
0.3
0.2
0.1
25
1 mA
Reverse Drain Current I
DR
(A)
10 V
6
5V
Pulse Test
Tc = 25°C
4
2
–5, –10 V
0
0
V
GS
= 0 V
0.4
0.8
1.2
1.6
2.0
Body-Drain Diode Forward Voltage V
SDF
(V)
50
75
100
125
150
Source to Drain Voltage V
SD
(V)
Case Temperature Tc (°C)
Rev.3.00 Jun 12, 2006 page 5 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
