FDD3570现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

当前位置：IC37首页_>F字母起始型号索引_>F字母起始型号索引第291页更新时间：2024-12-03 17:26:02

产品型号FDD3570的概述

芯片FDD3570的概述 FDD3570是一款高性能的功率MOSFET（Metal-Oxide-Semiconductor Field-Effect Transistor），广泛应用于电源管理和电机驱动等领域。作为一种增强型MOSFET，FDD3570的设计旨在满足现代电子设备对高效率和高功率密度的需求。其优异的导通电阻和快速的开关特性，使其在诸如DC-DC转换器、电源适配器以及高频逆变器等应用中表现出色。 FDD3570的结构设计采用了最新的制造工艺，确保在高电流和高电压下都能够稳定工作。其主要特征包括低导通电阻，快速的开关速度和高耐压能力，均使其成为功率电子领域内的重要元器件。芯片FDD3570的详细参数 FDD3570的主要电气参数如下： - 最大漏源电压 (V_DS): 30V - 最大漏极电流 (I_D): 70A - 导通电阻 (R_DS(on)): 0.027Ω（在V_...

产品型号FDD3570的Datasheet PDF文件预览

February 2000

PRELIMINARY

FDD3570

80V N-Channel PowerTrench MOSFET

General Description

Features

This N-Channel Logic level MOSFET has been

designed specifically to improve the overall efficiency of

DC/DC converters using either synchronous or

conventional switching PWM controllers.

• 10 A, 80 V.

R_DS(ON)= 0.019 Ω @ V_GS= 10 V

R_DS(ON)= 0.022 Ω @ V_GS= 6 V.

• Fast switching speed.

This MOSFET features faster switching and lower gate

change than other MOSFETs with comparable R_DS(ON)

specifications resulting in DC/DC power supply designs

with higher overall efficiency.

• High performance trench technology for extremely

low R_DS(ON)

• High power and current handling capability.

TO-252

Absolute Maximum Ratings

T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

V_GSS

I_D

Gate-Source Voltage

± 20

Maximum Drain Current-Continuous

(Note 1)

(Note 1a)

Maximum Drain Current – Pulsed

Maximum Power Dissipation @T_C= 25^oC

110

P_D

(Note 1)

T_A= 25^oC

(Note 1a)

(Note 1b)

3.4

1.3

T_J, T_stg

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to- Case

(Note 1)

(Note 1a)

(Note 1b)

1.8

R_θJC

°C/W

Thermal Resistance, Junction-to- Ambient

R_θJA

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDD3570

13’’

16mm

2500

FDD3570 Rev BW)

2000 Fairchild Semiconductor Corporation

Electrical Characteristics

T_A= 25°C unless otherwise noted16

Symbol

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BV_DSS

Drain–Source Breakdown Voltage

_GS= 0 V, I_D= 250 µA

Breakdown Voltage Temperature

Coefficient

∆BV^DSS

∆T_J

I_D= 250 µA,Referenced to 25°C

mV/°C

I_DSS

Zero Gate Voltage Drain Current

V_DS= 64 V,

V_GS= 20 V,

V_GS= 0 V

V_DS= 0 V

µA

I_GSSF

Gate–Body Leakage Current,

Forward

100

I_GSSR

Gate–Body Leakage Current,

Reverse

V_GS= –20 V

V_DS= 0 V

–100

On Characteristics

V_GS(th)

(Note 2)

Gate Threshold Voltage

2.4

-7

_DS= V_GS, I_D= 250 µA

Gate Threshold Voltage

Temperature Coefficient

∆V^GS(th)

∆T_J

I_D= 250 µA,Referenced to 25°C

mV/°C

R_DS(on)

Static Drain–Source

On–Resistance

V_GS= 10 V, I_D= 10 A

V_GS= 10 V, I_D= 10 A,T_J=125°C

0.015 0.019

0.027 0.038

0.016 0.022

Ω

V_GS

= 6 V, I_D= 9 A

I_D(on)

g_FS

On–State Drain Current

V_GS= 10 V,

V_DS= 5 V

Forward Transconductance

V_DS= 5 V,

I_D= 14 A

Dynamic Characteristics

C_iss

C_oss

C_rss

Input Capacitance

V_DS= 40 V,

f = 1.0 MHz

V _GS= 0 V,

2800

230

Output Capacitance

Reverse Transfer Capacitance

117

Switching Characteristics ^{(Note 2)}

t_d(on)

t_r

t_d(off)

t_f

Turn–On Delay Time

Turn–On Rise Time

Turn–Off Delay Time

Turn–Off Fall Time

Total Gate Charge

Gate–Source Charge

Gate–Drain Charge

_DD= 40 V,

I_D= 1 A,

R_GEN= 6 Ω

9.6

V_GS= 10 V,

Q_g

Q_gs

Q_gd

V_DS= 40V,

V_GS= 10 V

I_D= 9 A,

Drain–Source Diode Characteristics and Maximum Ratings

I_S

Maximum Continuous Drain–Source Diode Forward Current

2.8

1.2

V_SD

Drain–Source Diode Forward

Voltage

V_GS= 0 V, I_S= 2.8 A

(Note 2)

0.72

Notes:

1. R_θJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. R_θJCis guaranteed by design while R_θCAis determined by the user's board design.

_θJA= 40°/W when mounted on a

_θJA= 96°/W when mounted on

1in²pad of 2 oz copper

a minimum pad.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

FDD3570 Rev. A(W)

Typical Characteristics

1.8

1.6

1.4

1.2

V_GS= 10V

5.0V

6.0V

4.5V

V_GS= 4.0V

4.0V

4.5V

5.0V

6.0V

7.0V

10V

3.5V

0.8

150

I_D, DRAIN CURRENT (A)

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.04

0.03

0.02

0.01

I_D= 10 A

I_D= 9A

1.8

V_GS= 10V

1.6

1.4

1.2

T_A= 125^oC

T_A= 25^oC

0.8

0.6

0.4

-50

-25

100

125

T_J, JUNCTION TEMPERATURE (^oC)

_GS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

V_GS= 0V

V_DS= 5V

T_A= 125^oC

25^oC

-55^oC

0.1

0.01

0.001

125^oC

25^oC

T_A= -55^oC

0.0001

0.2

0.4

0.6

0.8

1.2

1.4

V_SD, BODY DIODE FORWARD VOLTAGE (V)

V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDD3570 Rev. A(W)

Typical Characteristics

4000

3500

3000

2500

2000

1500

1000

500

V_DS= 10V

f = 1MHz

I_D= 9A

V_GS= 0 V

20V

40V

C_ISS

C_OSS

C_RSS

Q_g, GATE CHARGE (nC)

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

1000

100

200

150

100

R_DS(ON)LIMIT

SINGLE PULSE

100µs

R_θJA= 96 °C/W

T_A= 25°C

1ms

10ms

100ms

10s

V_GS= 10V

SINGLE PULSE

_θJA= 96^oC/W

T_A= 25^oC

0.1

0.01

0.1

100

0.01

0.1

100

1000

V_DS, DRAIN-SOURCE VOLTAGE (V)

t₁, TIME (sec)

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

D = 0.5

R_θ_JA(t) = r(t) + R_θ

R_θ_JA= 96 °C/W

0.2

0.1

0.05

0.02

P(pk)

t₁

0.01

t₂

T_J- T_A= P * R_θ_JA(t)

SINGLEPULSE

Duty Cycle, D = t₁/ t₂

0.001

0.0001

0.001

0.01

0.1

100

1000

t₁, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.

Transient thermal response will change depending on the circuit board design.

FDD3570 Rev. A(W)

TO-252 Tape and Reel Data and Package Dimensions

D-PAK (TO-252) Packaging

Configuration: Figure 1.0

Packaging Description:

TO-252 parts are shipped in tape. The carrier tape is

ELECTROSTATIC

SENSITIVE DEVICES

made from dissipative (carbon filled) polycarbonate

DO NO

RO NG

CTROS

ATIC

CTRO

AGN

AG NE

R R ADIO ACTIVE FI ELD S

TNR DATE

PT NUMB E

resin. The cover tape is a multilayer film (Heat Activated

Adhesive in nature) primarily composed of polyester film,

adhesive layer, sealant, and anti-static sprayed agent.

These reeled parts in standard option are shipped with

2500 units per 13" or 330cm diameter reel. The reels are

dark blue in color and is made of polystyrene plastic (anti-

static coated). This and some other options are further

described in the Packaging Information table.

PEEL STRENGTH MIN ______________gms

MAX _____________gms

Antistatic Cover Tape

ESD Label

These full reels are individually barcode labeled and

placed inside

a standard intermediate box (illustrated in

figure 1.0) made of recyclable corrugated brown paper.

One box contains two reels maximum. And these boxes

are placed inside

a barcode labeled shipping box which

comes in different sizes depending on the number of parts

shipped.

Static Dissipative

Embossed Carrier Tape

F63TNR

Label

8 0 6 6

F D

5 3 9 Z F 9

8 0 6 6

F D

5 3 9 Z F 9

F D

5 3 9 Z F 9

D-PAK (TO-252) Packaging Information

Standard

(no flow code)

Packaging Option

D-PAK (TO-252) Unit Orientation

Packaging type

TNR

2,500

Qty per Reel/Tube/Bag

Reel Size

13" Dia

359x359x57

5,000

Box Dimension (mm)

Max qty per Box

Weight per unit (gm)

Weight per Reel(kg)

359mm x 359mm x 57mm

Standard Intermediate box

0.300

1.200

ESD Label

Note/Comments

F63TNR Label sample

F63TNR Label

LOT: CBVK741B019

QTY: 2500

SPEC:

FSID: FDD6680

D/C1: Z9942

D/C2:

QTY1:

QTY2:

SPEC REV:

CPN:

N/F: F

(F63TNR)3

TO-252 (D-PAK) Tape Leader and

Trailer Configuration: Figure 2.0

Carrier Tape

Cover Tape

Components

Trailer Tape

Leader Tape

640mm minimum or

80 empty pockets

1680mm minimum or

210 empty pockets

July 1999, Rev. A

TO-252 Tape and Reel Data and Package Dimensions

D-PAK (TO-252) Embossed Carrier

Tape Configuration: Figure 3.0

User Direction of Feed

Dimensions are in millimeter

Pkg type

TO252

(24mm)

6.90

+/-0.10

10.50

+/-0.10

16.0

+/-0.3

1.55

+/-0.05

1.5

+/-0.10

1.75

+/-0.10

14.25

min

7.50

+/-0.10

8.0

+/-0.1

4.0

+/-0.1

2.65

+/-0.10

0.30

+/-0.05

13.0

+/-0.3

0.06

+/-0.02

Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481

rotational and lateral movement requirements (see sketches A, B, and C).

0.9mm

maximum

10 deg maximum

Typical

component

cavity

center line

0.9mm

maximum

10 deg maximum component rotation

Typical

component

center line

Sketch A (Side or Front Sectional View)

Component Rotation

Sketch C (Top View)

Component lateral movement

Sketch B (Top View)

Component Rotation

D-PAK (TO-252) Reel

Configuration: Figure 4.0

W1 Measured at Hub

Dim A

Max

B Min

Dim C

Dim A

max

Dim D

min

Dim N

DETAIL AA

See detail AA

13" Diameter Option

W2 max Measured at Hub

Dimensions are in inches and millimeters

Reel

Option

Tape Size

Dim A

Dim B

Dim C

Dim D

Dim N

Dim W1

Dim W2

Dim W3 (LSL-USL)

13.00

330

0.059

1.5

512 +0.020/-0.008

13 +0.5/-0.2

0.795

20.2

4.00

100

0.646 +0.078/-0.000

16.4 +2/0

0.882

22.4

0.626 – 0.764

15.9 – 19.4

164mm

13" Dia

July 1999, Rev. A

TO-252 Tape and Reel Data and Package Dimensions

TO-252 (FS PKG Code AA)

1:1

Scale 1:1 on letter size paper

Dimensions shown below are in:

inches [millimeters]

Part Weight per unit (gram): 0.300

September 1999, Rev. A

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

ACEx™

CoolFET™

ISOPLANAR™

MICROWIRE™

POP™

PowerTrench

QFET™

SyncFET™

TinyLogic™

UHC™

CROSSVOLT™

E²CMOS^TM

VCX™

FACT™

FACT Quiet Series™

QS™

FAST^®

Quiet Series™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

FASTr™

GTO™

HiSeC™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or

In Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. D

FDD3570相关文章

配单直通车

深圳市芯福林电子有限公司服务专线: 13418564337 在线联系:

QQ：2881495808 复制

QQ：308365177 复制

北京元坤伟业科技有限公司服务专线: 010-62104931621064316210489162104791 在线联系:

QQ：857273081 复制

QQ：1594462451 复制

首天国际（深圳）科技有限公司服务专线: 0755-82807802/82807803 在线联系:

QQ：528164397 复制

QQ：1318502189 复制

深圳市中利达电子科技有限公司服务专线: 0755-13686833545 在线联系:

QQ：1902134819 复制

QQ：2881689472 复制

柒号芯城电子商务（深圳）有限公司服务专线: 18922803401 在线联系:

QQ：2881677436 复制

QQ：2881620402 复制

FDD3570产品参数

型号:	FDD3570
是否无铅：	不含铅
生命周期：	Active
零件包装代码：	TO-252
包装说明：	TO-252, 3 PIN
针数：	4
Reach Compliance Code：	unknown
风险等级：	5.36
其他特性：	FAST SWITCHING
雪崩能效等级（Eas）：	300 mJ
外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	80 V
最大漏极电流 (ID)：	43 A
最大漏源导通电阻：	0.02 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-252
JESD-30 代码：	R-PSSO-G2
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	1
端子数量：	2
工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	N-CHANNEL
最大脉冲漏极电流 (IDM)：	110 A
认证状态：	COMMERCIAL
表面贴装：	YES
端子面层：	MATTE TIN
端子形式：	GULL WING
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

电子百科

产品导航

产品型号FDD3570的概述

产品型号FDD3570的Datasheet PDF文件预览

FDD3570相关产品

FDD3570相关文章

IC37:专业IC行业平台