FDD3670现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

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产品型号FDD3670的概述

芯片FDD3670的概述 FDD3670是一款高性能、双路功率MOSFET驱动器，广泛用于开关电源、直流-直流变换器和其他高频应用中。其主要目的是提升电流驱动能力，减少开关损耗，同时确保高频率下的稳定工作性能。FDD3670集成了先进的驱动电路，从而增强了负载的切换速度，提高了系统的效率。该芯片适用于各种消费电子设备、工业用途和通讯设备，在电源管理中发挥着至关重要的作用。其设计考虑了高效的能量转化和散热管理，以确保在负载变化或环境温度升高时仍能保持可靠的性能。随着现代电子设备对电源效率要求的提升，FDD3670作为一种可靠的解决方案，正受到越来越多设计师的青睐。芯片FDD3670的详细参数芯片FDD3670的技术参数如下： - 技术类型：N沟MOSFET - 导通电阻（R_DS(on)）：约为6.0 mΩ（V_GS = 10V） - 最大漏极电流（I_D）：达到30A，适合高负荷...

产品型号FDD3670的Datasheet PDF文件预览

January 2000

ADVANCE INFORMATION

FDD3670

100V N-Channel PowerTrench MOSFET

General Description

Features

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers.

• 34 A, 100 V. R_DS(ON)= 0.030 Ω @ V_GS= 10 V

R_DS(ON)= 0.033 Ω @ V_GS= 6 V

• Low gate charge (57 nC typical)

• Fast switching speed

These MOSFETs feature faster switching and lower

gate charge than other MOSFETs with comparable

R_DS(ON)specifications.

• High performance trench technology for extremely

The result is a MOSFET that is easy and safer to drive

(even at very high frequencies), and DC/DC power

supply designs with higher overall efficiency.

low R_DS(ON)

• High power and current handling capability.

TO-252

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

100

V_GSS

I_D

Gate-Source Voltage

±20

Drain Current – Continuous

Drain Current – Pulsed

Maximum Power Dissipation @ T_C= 25°C

@ T_A= 25°C

(Note 1)

100

P_D

(Note 1)

(Note 1a)

(Note 1b)

3.2

1.3

@ T_A= 25°C

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

(Note 1)

1.8

R_θJC

°C/W

(Note 1b)

R_θJA

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDD3670

13’’

16mm

2500 units

FDD3670 Rev A(W)

2000 Fairchild Semiconductor Corporation

Electrical Characteristics

T_A= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BV_DSS

Drain–Source Breakdown Voltage

100

V_GS= 0 V, I_D= 250 µA

Breakdown Voltage Temperature

Coefficient

∆BV^DSS

∆T_J

I_D= 250 µA, Referenced to 25°C

mV/°C

I_DSS

Zero Gate Voltage Drain Current

Gate–Body Leakage, Forward

Gate–Body Leakage, Reverse

V_DS= 80 V,

V_GS= 20 V,

V_GS= –20 V

V_GS= 0 V

V_DS= 0 V

µA

I_GSSF

I_GSSR

100

–100

On Characteristics

(Note 2)

V_GS(th)

Gate Threshold Voltage

2.5

_DS= V_GS, I_D= 250 µA

Gate Threshold Voltage

Temperature Coefficient

–7.2

∆V^GS(th)

∆T_J

I_D= 250 µA, Referenced to 25°C

mV/°C

R_DS(on)

Static Drain–Source

On–Resistance

V_GS= 10 V,

I_D= 7.3 A

T_J= 125°C

I_D= 7.0 A

0.022 0.030

0.039 0.060

Ω

0.024 0.033

_GS= 6 V,

I_D(on)

g_FS

On–State Drain Current

V_GS= 10 V,

V_DS= 5 V,

V_DS= 5 V

I_D= 7.3 A

Forward Transconductance

Dynamic Characteristics

C_iss

C_oss

C_rss

Input Capacitance

2490

265

_DS= 50 V,

V _GS= 0 V,

Output Capacitance

f = 1.0 MHz

Reverse Transfer Capacitance

Switching Characteristics ^{(Note 2)}

t_d(on)

t_r

t_d(off)

t_f

Turn–On Delay Time

Turn–On Rise Time

Turn–Off Delay Time

Turn–Off Fall Time

Total Gate Charge

Gate–Source Charge

Gate–Drain Charge

_DD= 50 V,

I_D= 1 A,

V_GS= 10 V,

R_GEN= 6 Ω

Q_g

Q_gs

Q_gd

_DS= 50 V,

I_D= 25 A,

V_GS= 10 V

Drain–Source Diode Characteristics and Maximum Ratings

I_S

Maximum Continuous Drain–Source Diode Forward Current

2.7

1.2

Drain–Source Diode Forward

V_SD

_GS= 0 V, I_S= 2.7 A

(Note 2)

Voltage

Notes:

1. R_θJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. R_θJCis guaranteed by design while R_θCAis determined by the user's board design.

_θJA= 40 C/W when

b) R_θJA= 96 C/W on a

minimum mounting pad.

mounted on a 1in pad of

2oz copper.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

FDD3670 Rev A(W)

TO-252 Tape and Reel Data and Package Dimensions

D-PAK (TO-252) Packaging

Configuration: Figure 1.0

Packaging Description:

TO-252 parts are shipped in tape. The carrier tape is

ELECTROSTATIC

SENSITIVE DEVICES

made from dissipative (carbon filled) polycarbonate

DO NO

RO NG

CTROS

ATIC

CTRO

AGN

AG NE

R R ADIO ACTIVE FI ELD S

TNR DATE

PT NUMB E

resin. The cover tape is a multilayer film (Heat Activated

Adhesive in nature) primarily composed of polyester film,

adhesive layer, sealant, and anti-static sprayed agent.

These reeled parts in standard option are shipped with

2500 units per 13" or 330cm diameter reel. The reels are

dark blue in color and is made of polystyrene plastic (anti-

static coated). This and some other options are further

described in the Packaging Information table.

PEEL STRENGTH MIN ______________gms

MAX _____________gms

Antistatic Cover Tape

ESD Label

These full reels are individually barcode labeled and

placed inside

a standard intermediate box (illustrated in

figure 1.0) made of recyclable corrugated brown paper.

One box contains two reels maximum. And these boxes

are placed inside

a barcode labeled shipping box which

comes in different sizes depending on the number of parts

shipped.

Static Dissipative

Embossed Carrier Tape

F63TNR

Label

8 0 6 6

F D

5 3 9 Z F 9

8 0 6 6

F D

5 3 9 Z F 9

F D

5 3 9 Z F 9

D-PAK (TO-252) Packaging Information

Standard

(no flow code)

Packaging Option

D-PAK (TO-252) Unit Orientation

Packaging type

TNR

2,500

Qty per Reel/Tube/Bag

Reel Size

13" Dia

359x359x57

5,000

Box Dimension (mm)

Max qty per Box

Weight per unit (gm)

Weight per Reel(kg)

359mm x 359mm x 57mm

Standard Intermediate box

0.300

1.200

ESD Label

Note/Comments

F63TNR Label sample

F63TNR Label

LOT: CBVK741B019

QTY: 2500

SPEC:

FSID: FDD6680

D/C1: Z9942

D/C2:

QTY1:

QTY2:

SPEC REV:

CPN:

N/F: F

(F63TNR)3

TO-252 (D-PAK) Tape Leader and

Trailer Configuration: Figure 2.0

Carrier Tape

Cover Tape

Components

Trailer Tape

Leader Tape

640mm minimum or

80 empty pockets

1680mm minimum or

210 empty pockets

July 1999, Rev. A

TO-252 Tape and Reel Data and Package Dimensions

D-PAK (TO-252) Embossed Carrier

Tape Configuration: Figure 3.0

User Direction of Feed

Dimensions are in millimeter

Pkg type

TO252

(24mm)

6.90

+/-0.10

10.50

+/-0.10

16.0

+/-0.3

1.55

+/-0.05

1.5

+/-0.10

1.75

+/-0.10

14.25

min

7.50

+/-0.10

8.0

+/-0.1

4.0

+/-0.1

2.65

+/-0.10

0.30

+/-0.05

13.0

+/-0.3

0.06

+/-0.02

Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481

rotational and lateral movement requirements (see sketches A, B, and C).

0.9mm

maximum

10 deg maximum

Typical

component

cavity

center line

0.9mm

maximum

10 deg maximum component rotation

Typical

component

center line

Sketch A (Side or Front Sectional View)

Component Rotation

Sketch C (Top View)

Component lateral movement

Sketch B (Top View)

Component Rotation

D-PAK (TO-252) Reel

Configuration: Figure 4.0

W1 Measured at Hub

Dim A

Max

B Min

Dim C

Dim A

max

Dim D

min

Dim N

DETAIL AA

See detail AA

13" Diameter Option

W2 max Measured at Hub

Dimensions are in inches and millimeters

Reel

Option

Tape Size

Dim A

Dim B

Dim C

Dim D

Dim N

Dim W1

Dim W2

Dim W3 (LSL-USL)

13.00

330

0.059

1.5

512 +0.020/-0.008

13 +0.5/-0.2

0.795

20.2

4.00

100

0.646 +0.078/-0.000

16.4 +2/0

0.882

22.4

0.626 – 0.764

15.9 – 19.4

164mm

13" Dia

July 1999, Rev. A

TO-252 Tape and Reel Data and Package Dimensions

TO-252 (FS PKG Code AA)

1:1

Scale 1:1 on letter size paper

Dimensions shown below are in:

inches [millimeters]

Part Weight per unit (gram): 0.300

September 1999, Rev. A

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

ACEx™

CoolFET™

ISOPLANAR™

MICROWIRE™

POP™

PowerTrench

QFET™

SyncFET™

TinyLogic™

UHC™

CROSSVOLT™

E²CMOS^TM

VCX™

FACT™

FACT Quiet Series™

QS™

FAST^®

Quiet Series™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

FASTr™

GTO™

HiSeC™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or

In Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. D

FDD3670相关文章

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FDD3670产品参数

型号:	FDD3670
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
IHS 制造商：	ROCHESTER ELECTRONICS LLC
零件包装代码：	TO-252
包装说明：	DPAK-3
针数：	3
Reach Compliance Code：	unknown
风险等级：	5.37
Is Samacsys：	N
雪崩能效等级（Eas）：	360 mJ
外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	100 V
最大漏极电流 (ID)：	34 A
最大漏源导通电阻：	0.032 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-252
JESD-30 代码：	R-PSSO-G2
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	1
端子数量：	2
工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	N-CHANNEL
最大脉冲漏极电流 (IDM)：	100 A
认证状态：	COMMERCIAL
表面贴装：	YES
端子面层：	MATTE TIN
端子形式：	GULL WING
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	30
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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