FDD3680现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

当前位置：IC37首页_>F字母起始型号索引_>F字母起始型号索引第292页更新时间：2024-10-24 08:30:09

产品型号FDD3680的概述

芯片FDD3680的概述 FDD3680是一款广泛应用于电源管理和虚拟电路中的高性能功率MOSFET驱动芯片。其设计旨在优化能源使用效率并提供高功率密度，适合用于多种电子设备。FDD3680的主要功能是在复杂的电源环境中稳定驱动MOSFET，以实现有效的电力传输和开关控制。该芯片在现代电子产品中扮演着重要角色，能够配合大功率晶体管，提升系统的整体性能。它在智能手机、个人电脑、平板电脑等消费电子产品的电源模块中得到了广泛应用。此外，其在工业自动化、新能源、电动汽车等领域的应用也越来越受到重视。芯片FDD3680的详细参数 FDD3680芯片具有一系列显著的技术参数，使其在众多同类产品中脱颖而出。以下是FDD3680的主要参数指标： - 工作电压范围：最小输入电压为4.5V，最大输入电压为20V，适合多种工作场景。 - 工作温度范围：设备可在-40°C至125°C的温度范围内稳定工作，...

产品型号FDD3680的Datasheet PDF文件预览

February 2001

FDD3680

100V N-Channel PowerTrench^ÒMOSFET

General Description

Features

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers.

· 25 A, 100 V. R_DS(ON)= 46 mW @ V_GS= 10 V

R_DS(ON)= 51 mW @ V_GS= 6 V

· Low gate charge (38 nC typical)

· Fast switching speed

These MOSFETs feature faster switching and lower

gate charge than other MOSFETs with comparable

R_DS(ON)specifications.

· High performance trench technology for extremely

low R_DS(ON)

The result is a MOSFET that is easy and safer to drive

(even at very high frequencies), and DC/DC power

supply designs with higher overall efficiency.

· High power and current handling capability.

TO-252

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

100

V_GSS

I_D

Gate-Source Voltage

±20

Drain Current – Continuous

Drain Current – Pulsed

Maximum Power Dissipation

(Note 1)

100

P_D

(Note 1)

(Note 1a)

3.8

(Note 1b)

1.6

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +175

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

(Note 1)

2.2

R_qJC

°C/W

(Note 1b)

R_qJA

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

16mm

Quantity

FDD3680

13’’

2500 units

Ó2001 Fairchild Semiconductor Corporation

FDD3680 Rev B1(W)

Electrical Characteristics

T_A= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min Typ Max Units

Drain-Source Avalanche Ratings (Note 1)

W_DSS

I_AR

Single Pulse Drain-Source

Avalanche Energy

Maximum Drain-Source

Avalanche Current

V_DD= 50 V,

I_D= 6.1 A

245

6.1

Off Characteristics

Drain–Source Breakdown

Voltage

BV_DSS

100

V_GS= 0 V,

I_D= 250 mA

Breakdown Voltage Temperature

Coefficient

–101

DBVDSS

I_D= 250 mA, Referenced to 25°C

mV/°C

I_DSS

Zero Gate Voltage Drain Current V_DS= 80 V,

V_GS= 0 V

V_DS= 0 V

I_GSSF

I_GSSR

Gate–Body Leakage, Forward

Gate–Body Leakage, Reverse

V_GS= 20 V,

V_GS= –20 V

100

–100

On Characteristics

(Note 2)

V_GS(th)

Gate Threshold Voltage

V_DS= V_GS

I_D= 250 mA

2.4

DVGS(th)

Gate Threshold Voltage

Temperature Coefficient

I_D= 250 mA, Referenced to 25°C

–6.5

mV/°C

R_DS(on)

Static Drain–Source

On–Resistance

V_GS= 10 V,

V_GS= 6 V,

I_D= 6.1 A

I_D= 6.1 A, T_J= 125°C

I_D= 5.8 A

I_D(on)

g_FS

On–State Drain Current

V_GS= 10 V,

V_DS= 5 V,

V_DS= 5 V

I_D= 6.1 A

Forward Transconductance

Dynamic Characteristics

iss

Input Capacitance

V_DS= 50 V,

f = 1.0 MHz

V _GS= 0 V,

1735

176

C_oss

Output Capacitance

rss

Reverse Transfer Capacitance

Switching Characteristics (Note 2)

t_d(on)

t_r

t_d(off)

t_f

Turn–On Delay Time

Turn–On Rise Time

Turn–Off Delay Time

Turn–Off Fall Time

Total Gate Charge

Gate–Source Charge

Gate–Drain Charge

V_DD= 50 V,

V_GS= 10 V,

I_D= 1 A,

R_GEN= 10 W

8.5

Q_g

V_DS= 50 V,

V_GS= 10 V

I_D= 6.1 A,

Q_gs

Q_gd

8.1

9.2

Drain–Source Diode Characteristics and Maximum Ratings

I_S

Maximum Continuous Drain–Source Diode Forward Current

2.9

1.3

Drain–Source Diode Forward

V_SD

V_GS= 0 V,

I_S= 2.9 A (Note 2)

0.73

Voltage

Notes:

1. R_qJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. _qJCis guaranteed by design while R_{q CA}is determined by the user's board design.

b) R_qJA= 96 C/W on a

minimum mounting pad.

R_qJA= 40 C/W when

mounted on a 1in pad of

2oz copper.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%

FDD3680 Rev B1(W)

Typical Characteristics

1.8

1.6

1.4

1.2

VGS = 10V

4.5V

VGS =4.0V

4.5V

5.0V

6.0

10V

3.5V

0.8

I_D, DRAIN CURRENT (A)

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

2.6

0.12

I_D= 6.1A

I_D= 3.0A

VGS = 10V

2.2

1.8

1.4

0.08

0.04

T_A= 125^oC

TA = 25^oC

0.6

0.2

-50

-25

100

125

150

175

T_J, JUNCTION TEMPERATURE (^oC)

V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS = 0V

VDS =5V

T_A= 125^oC

25^oC

125^oC

-55^oC

TA = -55^oC

0.1

25^oC

0.01

0.001

0.2

0.4

0.6

0.8

1.2

1.4

VSD, BODY DIODE FORWARD VOLTAGE (V)

V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDD3680 Rev B1(W)

Typical Characteristics

3000

2500

2000

1500

1000

500

f = 1MHz

VGS = 0

I_D= 6.1A

V_DS= 15V

30V

50V

CISS

C_OSS

CRSS

100

Q_g, GATE CHARGE (nC)

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

1000

SINGLE PULSE

R_q_JA= 96°C/W

T_A= 25°C

100

R_DS(ON)LIMIT

100ms

1ms

10ms

100ms

10s

VGS = 10V

SINGLE PULSE

R _JA= 96^oC/W

0.1

TA = 25^oC

0.01

0.1

100

1000

0.1

100

1000

V_DS, DRAIN-SOURCE VOLTAGE (V)

t₁, TIME (sec)

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

D = 0.5

0.2

R_qJA (t) = r(t) + R_qJA

R_qJA = 96°C/W

0.1

0.05

0.02

P(pk

)

0.01

TJ - TA = P * RqJA(t)

Duty Cycle, D = t1 / t2

100

SINGLE PULSE

0.001

0.0001

0.001

0.01

0.1

1000

t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.

Transient thermal response will change depending on the circuit board design.

FDD3680 Rev B1(W)

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

PowerTrench

QFET™

QS™

SyncFET™

TinyLogic™

UHC™

ACEx™

FASTr™

GlobalOptoisolator™

GTO™

Bottomless™

CoolFET™

CROSSVOLT™

DOME™

QT Optoelectronics™

VCX™

HiSeC™

Quiet Series™

SILENT SWITCHER

SMART START™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

ISOPLANAR™

MICROWIRE™

OPTOLOGIC™

OPTOPLANAR™

PACMAN™

POP™

E²CMOS^TM

EnSigna^TM

FACT™

FACT Quiet Series™

FAST

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or

In Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. G

FDD3680相关文章

配单直通车

深圳市中利达电子科技有限公司服务专线: 0755-83200645/13686833545 在线联系:

QQ：1902134819 复制

QQ：2881689472 复制

北京元坤伟业科技有限公司服务专线: 010-62104931621064316210489162104791 在线联系:

QQ：857273081 复制

QQ：1594462451 复制

首天国际（深圳）科技有限公司服务专线: 0755-82807802/82807803 在线联系:

QQ：528164397 复制

QQ：1318502189 复制

深圳市芯福林电子有限公司服务专线: 13418564337 在线联系:

QQ：2881495808 复制

QQ：308365177 复制

柒号芯城电子商务（深圳）有限公司服务专线: 0755-83209937 在线联系:

QQ：2881677436 复制

QQ：2881620402 复制

FDD3680产品参数

型号:	FDD3680
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
零件包装代码：	TO-252
包装说明：	DPAK-3
针数：	3
Reach Compliance Code：	unknown
风险等级：	5.37
雪崩能效等级（Eas）：	245 mJ
外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	100 V
最大漏极电流 (ID)：	25 A
最大漏源导通电阻：	0.046 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-252
JESD-30 代码：	R-PSSO-G2
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	1
端子数量：	2
工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	N-CHANNEL
最大脉冲漏极电流 (IDM)：	100 A
认证状态：	COMMERCIAL
表面贴装：	YES
端子面层：	MATTE TIN
端子形式：	GULL WING
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	30
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

电子百科

产品导航

产品型号FDD3680的概述

产品型号FDD3680的Datasheet PDF文件预览

FDD3680相关产品

FDD3680相关文章

IC37:专业IC行业平台