FDM3622现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

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产品型号FDM3622的概述

芯片FDM3622的概述 FDM3622是一款高性能的集成电路，广泛应用于电源管理领域。该芯片专为开关电源、DC-DC变换器等应用设计，具有高效率和低功耗的特性。其数据表显示FDM3622在工作温度范围较广，适合多种恶劣环境下的使用。此芯片常见于消费电子、工业设备和汽车电子等不同领域。在现代电子设计中，电源管理芯片的高效性和可靠性直接影响到整个系统的性能。FDM3622凭借其独特的设计结构和先进的制造工艺，实现了出色的转换效率，并在电流负载变化时保持了良好的稳定性。芯片FDM3622的详细参数 FDM3622的主要技术参数包括： 1. 输入电压范围：该芯片支持宽广的输入电压范围，一般为4.5V至20V。 2. 输出电压：可调输出电压，通常为1.2V至10V。 3. 输出电流：该芯片可支持高达3A的输出电流，适合中等功率的应用需求。 4. 开关频率：FDM3622的开关频率可调...

产品型号FDM3622的Datasheet PDF文件预览

January 2005

FDM3622

N-Channel PowerTrench MOSFET

100V, 4.4A, 60mΩ

General Description

Features

r_DS(ON)= 44mΩ (Typ.), V_GS= 10V, I_D= 4.4A

Q_g(tot) = 13nC (Typ.), V_GS= 10V

Low Miller Charge

This N-Channel MOSFET is produced using Fairchild

Semiconductor’s advanced PowerTrench process that has

been especially tailored to minimize the on-state resistance

and yet maintain low gate charge for superior switching

performance.

Low Q_RRBody Diode

Optimized efficiency at high frequencies

UIS Capability (Single Pulse and Repetitive Pulse)

Applications

Distributed Power Architectures and VRMs

Primary Switch for 24V and 48V Systems

High Voltage Synchronous Rectifier

Formerly developmental type 82744

MicroFET 3.3 x 3.3

FDM3622 Rev. A

www.fairchildsemi.com

MOSFET Maximum Ratings T_C= 25°C unless otherwise noted

Symbol

V_DSS

V_GS

Parameter

Ratings

100

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current

±20

Continuous (T_C= 25 ^oC, V_GS= 10V, R_θJA= 52^oC/W)

Continuous (T_C= 25 ^oC, V_GS= 6V, R_θJA= 52^oC/W)

Continuous (T_C= 100^oC, V_GS= 10V, R_θJA= 52^oC/W)

Pulsed

4.4

3.8

I_D

2.8

Figure 4

190

E_AS

Single Pulse Avalanche Energy (Note 2)

Power dissipation

Derate above 25^oC

2.4

P_D

mW/^oC

^oC

T_J, T_STG

Operating and Storage Temperature

-55 to 150

Thermal Characteristics

R_θJA

R_θJC

Thermal Resistance Junction to Ambient (Note 1a)

108

1.8

^oC/W

Thermal Resistance Junction to Ambient (Note 1b)

Thermal Resistance Junction to Case (Note 1)

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape Width

12mm

Quantity

3000 units

FDM3622

MicroFET3.3x3.3

7”

Electrical Characteristics ^T_C= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

B_VDSS

Drain to Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

I_D= 250µA, V_GS= 0V

100

_DS= 80V

I_DSS

µA

V_GS= 0V

T_C= 100^oC

250

±100

I_GSS

V_GS= ±20V

On Characteristics

V_GS(TH)

Gate to Source Threshold Voltage

V_GS= V_DS, I_D= 250µA

I_D= 4.4A, V_GS= 10V

0.044 0.060

0.056 0.080

_D= 3.8A, V_GS= 6V,

I_D= 4.4A, V_GS= 10V,

_C= 150^oC

r_DS(ON)

Drain to Source On Resistance

Ω

0.092 0.120

Dynamic Characteristics

C_ISS

C_OSS

C_RSS

R_G

Input Capacitance

820

125

Ω

V_DS= 25V, V_GS= 0V,

f = 1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

V_GS= 0.5V, f = 1MHz

V_GS= 0V to 10V

3.1

Q_g(TOT)

Q_g(TH)

Q_gs

Total Gate Charge at 10V

Threshold Gate Charge

Gate to Source Gate Charge

Gate Charge Threshold to Plateau

Gate to Drain “Miller” Charge

2.1

V_GS= 0V to 2V

1.6

3.6

2.0

3.4

V_DD= 50V

_D= 4.4A

I_g= 1.0mA

Q_gs2

Q_gd

www.fairchildsemi.com

FDM3622 Rev. A

Resistive Switching Characteristics (V_GS= 10V)

t_ON

t_d(ON)

t_r

Turn-On Time

Turn-On Delay Time

Rise Time

V_DD= 50V, I_D= 4.4A

_GS= 10V, R_GS= 24Ω

t_d(OFF)

t_f

Turn-Off Delay Time

Fall Time

t_OFF

Turn-Off Time

Drain-Source Diode Characteristics

_SD= 4.4A

1.25

1.0

V_SD

Source to Drain Diode Voltage

I_SD= 2.2A

t_rr

Reverse Recovery Time

I_SD= 4.4A, dI_SD/dt = 100A/µs

Q_RR

Reverse Recovered Charge

108

Notes:

is determined with the device mounted on a 1in 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material.

is guaranteed by design while R

θJA

θJC

determined by the user’s board design.

(a). R

= 52°C/W when mounted on a 1in pad of 2 oz. copper.

θJA

(b). R

= 108°C/W when mounted on a minimum pad of 2 oz. copper

2. Starting T = 25°C, L = 31mH, I = 3.5A, V = 100V

www.fairchildsemi.com

FDM3622 Rev. A

Typical Characteristics T_C= 25°C unless otherwise noted

1.2

1.0

0.8

0.6

0.4

0.2

= 10V

100

125

150

100

125

150

, AMBIENT TEMPERATURE ( C)

T , AMBIENT TEMPERATURE ( C)

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

Figure 2. Maximum Continuous Drain Current vs

Ambient Temperature

DUTY CYCLE - DESCENDING ORDER

0.5

0.2

0.1

0.05

0.02

0.01

0.1

NOTES:

DUTY FACTOR: D = t /t

SINGLE PULSE

PEAK T = P

x Z

x R

+ T

θJA

θJA A

0.01

-5

-4

-3

-2

-1

t, RECTANGULAR PULSE DURATION (s)

Figure 3. Normalized Maximum Transient Thermal Impedance

200

100

= 25 C

TRANSCONDUCTANCE

MAY LIMIT CURRENT

IN THIS REGION

FOR TEMPERATURES

ABOVE 25 C DERATE PEAK

CURRENT AS FOLLOWS:

150 - T

I = I

125

= 10V

-5

-4

-3

-2

-1

t, PULSE WIDTH (s)

Figure 4. Peak Current Capability

www.fairchildsemi.com

FDM3622 Rev. A

Typical Characteristics T_C= 25°C unless otherwise noted

100

If R = 0

= (L)(I )/(1.3*RATED BV

- V

)

DSS

If R ≠ 0

100µs

= (L/R)ln[(I *R)/(1.3*RATED BV

- V ) +1]

DSS

STARTING T = 25 C

1ms

OPERATION IN THIS

AREA MAY BE

LIMITED BY r

DS(ON)

10ms

SINGLE PULSE

STARTING T = 150 C

= MAX RATED

= 25 C

0.1

0.001

0.01

0.1

t , TIME IN AVALANCHE (ms)

100

, DRAIN TO SOURCE VOLTAGE (V)

120

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

Figure 6. Unclamped Inductive Switching

Capability

Figure 5. Forward Bias Safe Operating Area

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

= 10V

= 25 C

= 15V

= 5V

= 150 C

= 4.7V

= 4.5V

= -55 C

= 25 C

3.0

3.5

4.0

4.5

5.0

5.5

6.0

0.5

1.0

1.5

2.0

2.5

3.0

, GATE TO SOURCE VOLTAGE (V)

, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Transfer Characteristics

Figure 8. Saturation Characteristics

2.5

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

2.0

1.5

1.0

= 4.4A

= 0.2A

0.5

= 10V, I = 4.4A

-80

-40

120

160

, GATE TO SOURCE VOLTAGE (V)

T , JUNCTION TEMPERATURE ( C)

Figure 9. Drain to Source On Resistance vs Gate

Voltage and Drain Current

Figure 10. Normalized Drain to Source On

Resistance vs Junction Temperature

www.fairchildsemi.com

FDM3622 Rev. A

Typical Characteristics T_C= 25°C unless otherwise noted

1.2

1.0

0.8

0.6

1.2

1.1

1.0

0.9

= V , I = 250µA

DS D

= 250µA

-80

-40

120

160

-80

-40

120

160

T , JUNCTION TEMPERATURE ( C)

Figure 11. Normalized Gate Threshold Voltage vs

Junction Temperature

Figure 12. Normalized Drain to Source

Breakdown Voltage vs Junction Temperature

1200

1000

= 50V

= C + C

GS GD

ISS

+ C

OSS

DS GD

100

= C

RSS

WAVEFORMS IN

DESCENDING ORDER:

= 4.4A

= 1A

= 0V, f = 1MHz

0.1

100

, DRAIN TO SOURCE VOLTAGE (V)

Q , GATE CHARGE (nC)

Figure 13. Capacitance vs Drain to Source

Voltage

Figure 14. Gate Charge Waveforms for Constant

Gate Currents

www.fairchildsemi.com

FDM3622 Rev. A

Test Circuits and Waveforms

DSS

VARY t TO OBTAIN

REQUIRED PEAK I

DUT

0.01Ω

Figure 15. Unclamped Energy Test Circuit

Figure 16. Unclamped Energy Waveforms

g(TOT)

= 10V

= 2V

DUT

gs2

g(REF)

g(TH)

g(REF)

Figure 17. Gate Charge Test Circuit

Figure 18. Gate Charge Waveforms

OFF

d(OFF)

d(ON)

90%

10%

DUT

90%

50%

PULSE WIDTH

10%

Figure 19. Switching Time Test Circuit

Figure 20. Switching Time Waveforms

www.fairchildsemi.com

FDM3622 Rev. A

PSPICE Electrical Model

.SUBCKT FDM3622 2 1 3 ;

Ca 12 8 2.5e-10

rev October 2004

Cb 15 14 2.5e-10

Cin 6 8 8e-10

LDRAIN

DPLCAP

DRAIN

Dbody 7 5 DbodyMOD

Dbreak 5 11 DbreakMOD

Dplcap 10 5 DplcapMOD

RLDRAIN

RSLC1

DBREAK

RSLC2

ESLC

Ebreak 11 7 17 18 109

Eds 14 8 5 8 1

Egs 13 8 6 8 1

Esg 6 10 6 8 1

Evthres 6 21 19 8 1

Evtemp 20 6 18 22 1

DBODY

RDRAIN

EBREAK 18

ESG

EVTHRES

MWEAK

LGATE

EVTEMP

RGATE

GATE

It 8 17 1

MMED

MSTRO

RLGATE

Lgate 1 9 1.06e-9

Ldrain 2 5 1.0e-9

Lsource 3 7 0.19e-9

LSOURCE

CIN

SOURCE

RSOURCE

RLSOURCE

RLgate 1 9 10.6

RLdrain 2 5 10

RLsource 3 7 1.9

S1A

S2A

RBREAK

RVTEMP

S1B

S2B

Mmed 16 6 8 8 MmedMOD

Mstro 16 6 8 8 MstroMOD

Mweak 16 21 8 8 MweakMOD

VBAT

EGS

EDS

Rbreak 17 18 RbreakMOD 1

Rdrain 50 16 RdrainMOD 9e-3

Rgate 9 20 3.16

RVTHRES

RSLC1 5 51 RSLCMOD 1.0e-6

RSLC2 5 50 1.0e3

Rsource 8 7 RsourceMOD 27.7e-3

Rvthres 22 8 RvthresMOD 1

Rvtemp 18 19 RvtempMOD 1

S1a 6 12 13 8 S1AMOD

S1b 13 12 13 8 S1BMOD

S2a 6 15 14 13 S2AMOD

S2b 13 15 14 13 S2BMOD

Vbat 22 19 DC 1

ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*70),2.5))}

.MODEL DbodyMOD D (IS=1.2E-12 RS=9.4e-3 TRS1=2.0e-3 TRS2=4.5e-7

+ CJO=5.5e-10 M=0.56 TT=4.4e-8 XTI=4.0)

.MODEL DbreakMOD D (RS=0.6 TRS1=1.4e-3 TRS2=-5e-5)

.MODEL DplcapMOD D (CJO=2.0e-10 IS=1.0e-30 N=10 M=0.54)

.MODEL MmedMOD NMOS (VTO=3.58 KP=2.8 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=3.16)

.MODEL MstroMOD NMOS (VTO=4.26 KP=32 IS=1e-30 N=10 TOX=1 L=1u W=1u)

.MODEL MweakMOD NMOS (VTO=3.12 KP=0.04 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=31.6 RS=0.1)

.MODEL RbreakMOD RES (TC1=1.05e-3 TC2=-1.1e-8)

.MODEL RdrainMOD RES (TC1=3.0e-2 TC2=5e-5)

.MODEL RSLCMOD RES (TC1=3.0e-3 TC2=2.9e-6)

.MODEL RsourceMOD RES (TC1=1.0e-3 TC2=1.0e-6)

.MODEL RvthresMOD RES (TC1=-3.9e-3 TC2=-1.4e-5)

.MODEL RvtempMOD RES (TC1=-3.4e-3 TC2=1.8e-7)

.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-6.0 VOFF=-2.0)

.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-2.0 VOFF=-6.0)

.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-0.5 VOFF=0.3)

.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=0.3 VOFF=-0.5)

.ENDS

Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global

Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank

Wheatley.

www.fairchildsemi.com

FDM3622 Rev. A

SABER Electrical Model

REV October 2004

ttemplate FDM3622 n2,n1,n3

electrical n2,n1,n3

{

var i iscl

dp..model dbodymod = (isl=1.2e-12,rs=9.4e-3,trs1=2.0e-3,trs2=4.5e-7,cjo=5.5e-10,m=0.56,tt=4.4e-8,xti=4.0)

dp..model dbreakmod = (rs=0.6,trs1=1.4e-3,trs2=-5.0e-5)

dp..model dplcapmod = (cjo=2.0e-10,isl=10.0e-30,nl=10,m=0.54)

m..model mmedmod = (type=_n,vto=3.58,kp=2.8,is=1e-30, tox=1)

m..model mstrongmod = (type=_n,vto=4.26,kp=32,is=1e-30, tox=1)

m..model mweakmod = (type=_n,vto=3.12,kp=0.04,is=1e-30, tox=1,rs=0.1)

sw_vcsp..model s1amod = (ron=1e-5,roff=0.1,von=-6.0,voff=-2.0)

sw_vcsp..model s1bmod = (ron=1e-5,roff=0.1,von=-2.0,voff=-6.0)

LDRAIN

DPLCAP

DRAIN

sw_vcsp..model s2amod = (ron=1e-5,roff=0.1,von=-0.5,voff=0.3)

sw_vcsp..model s2bmod = (ron=1e-5,roff=0.1,von=0.3,voff=-0.5)

RLDRAIN

c.ca n12 n8 = 2.5e-10

c.cb n15 n14 = 2.5e-10

c.cin n6 n8 = 8e-9

RSLC1

RSLC2

ISCL

dp.dbody n7 n5 = model=dbodymod

dp.dbreak n5 n11 = model=dbreakmod

dp.dplcap n10 n5 = model=dplcapmod

DBREAK

RDRAIN

ESG

DBODY

EVTHRES

spe.ebreak n11 n7 n17 n18 = 109

MWEAK

LGATE

EVTEMP

spe.eds n14 n8 n5 n8 = 1

spe.egs n13 n8 n6 n8 = 1

RGATE

GATE

EBREAK

MMED

spe.esg n6 n10 n6 n8 = 1

spe.evthres n6 n21 n19 n8 = 1

spe.evtemp n20 n6 n18 n22 = 1

MSTRO

RLGATE

LSOURCE

CIN

SOURCE

i.it n8 n17 = 1

RSOURCE

RLSOURCE

S1A

S2A

l.lgate n1 n9 = 1.06e-9

l.ldrain n2 n5 = 1.0e-9

l.lsource n3 n7 = 0.19e-9

RBREAK

RVTEMP

S1B

S2B

res.rlgate n1 n9 = 10.6

res.rldrain n2 n5 = 10

res.rlsource n3 n7 = 1.9

VBAT

EGS

EDS

m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u

m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u

m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u

RVTHRES

res.rbreak n17 n18 = 1, tc1=1.05e-3,tc2=-1.1e-8

res.rdrain n50 n16 = 9e-3, tc1=3.0e-2,tc2=5e-5

res.rgate n9 n20 = 3.16

res.rslc1 n5 n51 = 1.0e-6, tc1=3.0e-3,tc2=2.9e-6

res.rslc2 n5 n50 = 1.0e3

res.rsource n8 n7 = 27.7e-3, tc1=1.0e-3,tc2=1.0e-6

res.rvthres n22 n8 = 1, tc1=-3.9e-3,tc2=-1.4e-5

res.rvtemp n18 n19 = 1, tc1=-3.4e-3,tc2=1.8e-7

sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod

sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod

sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod

sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod

v.vbat n22 n19 = dc=1

equations {

i (n51->n50) +=iscl

iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/70))** 2.5))

}

www.fairchildsemi.com

FDM3622 Rev. A

SPICE Thermal Model

REV October 2004

JUNCTION

FDM3622_JA Junction Ambient

Copper Area = 1sq.in

CTHERM1 TH c2 1.1e-4

CTHERM2 c2 c3 1.2e-4

CTHERM3 c3 c4 3.0e-4

CTHERM4 c4 c5 2.0e-3

CTHERM5 c5 c6 6.4e-3

CTHERM6 c6 c7 3.2e-2

CTHERM7 c7 c8 2.9e-1

CTHERM8 c8 Ambient 3

RTHERM1

RTHERM2

RTHERM3

RTHERM4

RTHERM5

RTHERM6

RTHERM7

RTHERM8

CTHERM1

CTHERM2

CTHERM3

CTHERM4

CTHERM5

CTHERM6

CTHERM7

CTHERM8

RTHERM1 TH c2 2.0e-2

RTHERM2 c2 c3 1.3e-1

RTHERM3 c3 c4 2.0e-1

RTHERM4 c4 c5 1.1

RTHERM5 c5 c6 3.3

RTHERM6 c6 c7 6.8

RTHERM7 c7 c8 12.2

RTHERM8 c8 Ambient 27

SABER Thermal Model

SABER thermal model FDM3622

Copper Area = 1sq.in

template thermal_model th tl

thermal_c th, tl

{

ctherm.ctherm1 th c2 =1.1e-4

ctherm.ctherm2 c2 c3 =1.2e-4

ctherm.ctherm3 c3 c4 =3.0e-4

ctherm.ctherm4 c4 c5 =2.0e-3

ctherm.ctherm5 c5 c6 =6.4e-3

ctherm.ctherm6 c6 c7 =3.2e-2

ctherm.ctherm7 c7 c8 =2.9e-1

ctherm.ctherm8 c8 tl =3

rrtherm.rtherm1 th c2 =2.0e-2

rtherm.rtherm2 c2 c3 =1.3e-1

rtherm.rtherm3 c3 c4 =2.0e-1

rtherm.rtherm4 c4 c5 =1.1

rtherm.rtherm5 c5 c6 =3.3

rtherm.rtherm6 c6 c7 =6.8

rtherm.rtherm7 c7 c8 =12.2

rtherm.rtherm8 c8 tl =27

}

AMBIENT

www.fairchildsemi.com

FDM3622 Rev. A

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intended to be an exhaustive list of all such trademarks.

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SuperSOT™-3

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EcoSPARK™

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MicroPak™

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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

CORPORATION.

As used herein:

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which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

www.fairchildsemi.com

FDM3622 Rev. A

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FDM3622产品参数

型号:	FDM3622
Brand Name：	Fairchild Semiconductor
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Transferred
IHS 制造商：	FAIRCHILD SEMICONDUCTOR CORP
零件包装代码：	MLP
包装说明：	SMALL OUTLINE, S-PDSO-F5
针数：	8
制造商包装代码：	8LD,MLP,DUAL, 3.3MM SQUARE
Reach Compliance Code：	compliant
ECCN代码：	EAR99
HTS代码：	8541.29.00.95
风险等级：	5.69
Is Samacsys：	N
雪崩能效等级（Eas）：	190 mJ
外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	100 V
最大漏极电流 (Abs) (ID)：	3.8 A
最大漏极电流 (ID)：	4.4 A
最大漏源导通电阻：	0.06 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	S-PDSO-F5
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	1
端子数量：	5
工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	SQUARE
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	2.4 W
认证状态：	Not Qualified
子类别：	FET General Purpose Power
表面贴装：	YES
端子面层：	Matte Tin (Sn)
端子形式：	FLAT
端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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