FDM6296现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

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产品型号FDM6296的概述

芯片FDM6296概述 FDM6296是一款高性能的集成电路，广泛应用于电源管理和高频应用中。该芯片以其可靠性、低功耗和高效能而闻名，是现代电子设备中不可或缺的元件之一。FDM6296尤其适用于移动设备、消耗品及其他嵌入式系统，因其设计的灵活性和易于集成的特性，使其在市场上获得了良好的认可。 FDM6296的设计采用了先进的SOI（绝缘体上硅）技术，这使得芯片在运行过程中表现出良好的热稳定性及高频性能。同时，该芯片还融入了多种保护机制，比如过流保护、过热保护等，以确保在各种负载条件下的安全性和稳定性。这些特性使得FDM6296成为工业、消费电子以及汽车电子等多个领域的重要选择。芯片FDM6296的详细参数 FDM6296芯片的技术参数如下： - 工作电压范围：3V至5.5V - 工作温度范围：-40°C至85°C - 输出电流：最高可达1A - 功耗：空载时功耗通常低于10mA - ...

产品型号FDM6296的Datasheet PDF文件预览

December 2004

FDM6296

Single N-Channel, Logic-Level, PowerTrench^®MOSFET

Features

General Description

■ 11.5 A, 30 V R

= 10.5 mΩ @ V = 10 V

This single N-Channel MOSFET in the thermally efﬁcient Micro-

FET package has been speciﬁcally designed to perform well in

Point of Load converters. Providing an optimized balance

between Rds(on) and gate charge this device can be effectively

used as a “high side” control switch or “low side” synchronous

rectiﬁer.

DS(ON)

= 15 mΩ @ V = 4.5 V

■ Low Qg, Qgd and Rg for efﬁcient switching performance

■ Low Proﬁle – MicroFET 3.3 x 3.3 mm

Applications

■ Point of Load Converter

■ 1/16 Brick Synchronous Rectiﬁer

MicroFET

Bottom

Top

Absolute Maximum Ratings T =25°C unless otherwise noted

Symbol

Parameter

Ratings

Units

Drain-Source Voltage

Gate-Source Voltage

DSS

GSS

Drain Current

– Continuous

– Pulsed

(Note 1a)

11.5

Power Dissipation (Steady State)

(Note 1a)

(Note 1b)

2.5

1.2

T , T

Operating and Storage Junction Temperature Range

–55 to +150

°C

STG

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1b)

(Note 1)

108

°C/W

θJA

θJC

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

6296

FDM6296

7’’

12mm

3000 units

FDM6296 Rev. D

www.fairchildsemi.com

Electrical Characteristics T = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

Drain–Source Breakdown Voltage

= 0 V, I = 250 µA

DSS

∆BV

∆T

Breakdown Voltage Temperature

Coefﬁcient

= 250 µA, Referenced to 25°C

mV/°C

DSS

Zero Gate Voltage Drain Current

Gate–Body Leakage

= 24 V, V = 0 V

µA

DSS

GSS

20 V, V = 0 V

100

On Characteristics (Note 2)

Gate Threshold Voltage

= V , I = 250 µA

1.9

–5

GS(th)

∆V

∆T

)

Gate Threshold Voltage

Temperature Coefﬁcient

= 250 µA, Referenced to 25°C

mV/°C

GS(th

Static Drain–Source

On–Resistance

= 10 V, I = 11.5 A

8.7

10.6

10.5

mΩ

DS(on)

= 4.5 V, I = 10 A

= 10 V, I = 11.5A, T = 125°C

Forward Transconductance

= 5 V, I =11.5 A

Dynamic Characteristics

Input Capacitance

= 15 V, V = 0 V,

1507

415

128

1.1

Ω

iss

oss

rss

f = 1.0 MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

= 15 mV, f = 1.0 MHz

Switching Characteristics (Note 2)

Turn–On Delay Time

Turn–On Rise Time

Turn–Off Delay Time

Turn–Off Fall Time

Total Gate Charge

Gate–Source Charge

Gate–Drain Charge

= 15 V, I = 1 A,

d(on)

= 10 V, R

= 6 Ω

GEN

d(off)

= 15 V, I = 11.5 A,

= 5 V

Drain–Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain–Source Diode Forward Current

Drain–Source Diode Forward

Voltage

= 0 V, I = 2 A (Note 2)

0.9

1.2

Diode Reverse Recovery Time

Diode Reverse Recovery Charge

= 11.5 A,

d /d = 100 A/µs

Notes:

1. R

is determined with the device mounted on a 1 in_ 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material.

θJA

θJC

are guaranteed by design while R

is determined by the user’s board design.

θJA

(a). R

(b). R

= 52°C/W when mounted on a 1in pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB

= 108°C/W when mounted on a minimum pad of 2 oz copper

θJA

2. Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%

www.fairchildsemi.com

FDM6296 Rev. D

Typical Characteristics

1.8

1.6

1.4

3.5V

= 10.0V

= 3.0V

3.0V

4.5V

4.0V

3.5V

4.0V

4.5V

6.0V

1.2

5.0V

10.0V

2.5V

0.2

0.4

0.6

0.8

I , DRAIN CURRENT (A)

, DRAIN-SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage

1.6

0.025

0.02

= 11.5V

= 10.0V

= 5.8A

1.4

1.2

= 125°C

0.015

0.01

0.5

0.6

= 25°C

0.005

-50

-25

100

125

150

T , JUNCTION TEMPERATURE (°C)

, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with Temperature

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage

100

= 0V

= 5V

= 125°C

25°C

0.1

= 125°C

-55°C

0.01

0.001

25°C

0.0001

0.2

0.4

0.6

0.8

1.2

0.5

1.5

2.5

3.5

, BODY DIODE FORWARD VOLTAGE (V)

, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature

www.fairchildsemi.com

FDM6296 Rev. D

Typical Characteristics

1800

1500

1200

900

f = 1 MHz

= 0V

= 11.5V

iss

= 10V

20V

15V

oss

600

300

2.5V

rss

, DRAIN TO SOURCE VOLTAGE (V)

, GATE CHARGE (nC)

Figure 7. Gate Charge Characteristics

Figure 8. Capacitance Characteristics

100

LIMIT

DS(ON)

SINGLE PULSE

= 108°C/W

θJA

100µs

= 25°C

1ms

10ms

100ms

= 10.0V

0.1

10s

SINGLE PULSE

= 108°C/W

θJA

= 25°C

0.01

0.1

100

0.001

0.01

0.1

100

1000

V , DRAIN-SOURCE VOLTAGE (V)

t , TIME (sec)

Figure 9. Maximum Safe Operating Area

Figure 10. Single Pulse Maximum

Power Dissipation

D = 0.5

0.2

0.1

(t) = r(t) * R

θJA θJA

θJA

= 108°C/W

0.1

0.05

0.02

P(pk)

0.01

– T = P * R (t)

A θJA

Duty Cycle, D = t /t

Single Phase

0.001

0.0001

0.001

0.01

0.1

t , TIME (sec)

100

1000

Figure 5. Transfer Characteristics

Thermal characterization performed using the conditions described in Note 1b.

Transient thermal response will change depending on the circuit board design.

www.fairchildsemi.com

FDM6296 Rev. D

Dimensional Outline and Pad Layout

3.00 0.10

PKG

2.37 MIN

SYM

PKG C

(0.37)

0.32 0.05

0.10 A B

0.65

1.95

SEE

DETAIL A

0.10 C

0.65

0.42 MIN

1.95

LAND PATTERN

RECOMMENDATION

0.08 C

(2.27)

PKG C

3.20 0.15

NOTES: UNLESS OTHERWISE SPECIFIED

NO PACKAGE STANDARD REFERENCE

AS OF 29 JUNE 2002.

ALL DIMENSIONS ARE IN MILLIMETERS.

DIMENSIONS DO NOT INCLUDE BURRS

OR MOLD FLASH.

DIMENSIONING AND TOLERANCING PER

ASME Y14.5M–1994.

SEATING

PLANE

DETAIL A

SCALE: 48:1

www.fairchildsemi.com

FDM6296 Rev. D

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.



ACEx™

Power247™

PowerEdge™

PowerSaver™

Stealth™

ISOPLANAR™

LittleFET™

MICROCOUPLER™

MicroFET™

MicroPak™

MICROWIRE™

MSX™

FAST

ActiveArray™

Bottomless™

CoolFET™

CROSSVOLT™

DOME™

EcoSPARK™

E²CMOS™

EnSigna™

FACT™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

FASTr™

FPS™

FRFET™

GlobalOptoisolator™

GTO™



PowerTrench



QFET

QS™

SyncFET™



QT Optoelectronics™ TinyLogic

HiSeC™

I²C™

Quiet Series™

RapidConfigure™

RapidConnect™

µSerDes™

TINYOPTO™

MSXPro™

OCX™

TruTranslation™

UHC™

i-Lo™

ImpliedDisconnect™

OCXPro™

OPTOLOGIC



FACT Quiet Series™

UltraFET



SILENT SWITCHER UniFET™

OPTOPLANAR™

PACMAN™

POP™

Across the board. Around the world.™

SMART START™

SPM™

VCX™



The Power Franchise

ProgrammableActive Droop™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVESTHE RIGHTTO MAKE CHANGES WITHOUTFURTHER NOTICETOANY

PRODUCTS HEREINTO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANYLIABILITY

ARISING OUTOFTHEAPPLICATION OR USE OFANYPRODUCTOR CIRCUITDESCRIBED HEREIN; NEITHER DOES IT

CONVEYANYLICENSE UNDER ITS PATENTRIGHTS, NORTHE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or

In Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. I14

www.fairchildsemi.com

FDM6296 Rev. D

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