FDMC3612各脚功能电路原理芯片引脚定义引脚图及功能IC贸易商-中国IC网-芯三七

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产品型号FDMC3612的概述

芯片FDMC3612的概述 FDMC3612是一款具有高效能与高集成度的功率MOSFET，广泛应用于电源管理、DC-DC转换器和其他需要高开关频率的领域。此芯片的设计目标是满足现代电子设备对高效率和低功耗的要求，尤其是对电源供给系统的严格标准。FDMC3612的优势在于其低导通电阻和迅捷的开关特性，使其成为当前市场中值得关注的器件。芯片FDMC3612的详细参数 FDMC3612的主要参数如下： - 类型：N沟道MOSFET - 最大漏极-源极电压（V_DS）：60V - 最大持续漏极电流（I_D）：65A - 源极-漏极导通电阻（R_DS(on)）：最小值为 7.5mΩ（V_GS = 10V时） - 栅极阈值电压（V_GS(th)）：2.0V - 4.0V - 栅极容量（C_gs）：大约为 4000pF (V_DS = 25V) - 开关速度：特定的开关特性使得升降时间较短（通常为...

产品型号FDMC3612的Datasheet PDF文件预览

February 2012

FDMC3612

N-Channel Power Trench^®MOSFET

100 V, 12 A, 110 mΩ

Features

General Description

Max r_DS(on)= 110 mΩ at V_GS= 10 V, I_D= 3.3 A

Max r_DS(on)= 122 mΩ at V_GS= 6 V, I_D= 3.0 A

Low Profile - 1 mm max in Power 33

100% UIL Tested

This N-Channel MOSFET is produced using Fairchild

Semiconductor‘s advanced Power Trench^®process that has

been especially tailored to minimize the on-state resistance and

yet maintain superior switching performance.

RoHS Compliant

Applications

DC - DC Conversion

PSE Switch

Top

Bottom

MLP 3.3x3.3

MOSFET Maximum Ratings T_C= 25 °C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

100

±20

Drain Current -Continuous (Package limited)

-Continuous (Silicon limited)

-Continuous

T_C= 25 °C

_C= 25 °C

I_D

T_A= 25 °C

(Note 1a)

(Note 3)

3.3

-Pulsed

E_AS

Single Pulse Avalanche Energy

Power Dissipation

T_C= 25 °C

T_A= 25 °C

P_D

Power Dissipation

(Note 1a)

2.3

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to + 150

°C

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

3.5

°C/W

(Note 1a)

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

13’’

Tape Width

12 mm

Quantity

FDMC3612

Power 33

3000 units

FDMC3612 Rev.C2

www.fairchildsemi.com

Electrical Characteristics T_J= 25 °C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BV_DSS

Drain to Source Breakdown Voltage

I_D= 250 μA, V_GS= 0 V

100

ΔBV_DSS

ΔT_J

Breakdown Voltage Temperature

Coefficient

_D= 250 μA, referenced to 25 °C

109

mV/°C

I_DSS

I_GSS

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

V_DS= 80 V, V_GS= 0 V

V_GS= ±20 V, V_DS= 0 V

μA

±100

On Characteristics

V_GS(th)

Gate to Source Threshold Voltage

V_GS= V_DS, I_D= 250 μA

2.0

2.5

-7

4.0

ΔV_GS(th)

ΔT_J

Gate to Source Threshold Voltage

Temperature Coefficient

_D= 250 μA, referenced to 25 °C

_GS= 10 V, I_D= 3.3 A

mV/°C

110

122

212

r_DS(on)

g_FS

Static Drain to Source On Resistance

Forward Transconductance

V_GS= 6 V, I_D= 3.0 A

mΩ

V_GS= 10 V, I_D= 3.3 A, T_J= 125 °C

V_DS= 10 V, I_D= 3.3 A

177

Dynamic Characteristics

C_iss

C_oss

C_rss

R_g

Input Capacitance

662

880

V_DS= 50 V, V_GS= 0 V,

f = 1 MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

1.3

Switching Characteristics

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

Rise Time

7.4

2.8

V_DD= 50 V, I_D= 3.3 A,

_GS= 10 V, R_GEN= 6 Ω

Turn-Off Delay Time

Fall Time

Q_g(TOT)

Q_gs

Total Gate Charge

Gate to Drain “Miller” Charge

V_GS= 0 V to 10 V

V_GS= 0 V to 5 V

14.4

7.9

2.3

3.7

V_DD= 50 V,

_D= 3.3 A

Q_gd

Drain-Source Diode Characteristics

_GS= 0 V, I_S= 3.3 A

(Note 2)

0.88

0.77

1.2

V_SD

Source to Drain Diode Forward Voltage

V_GS= 0 V, I_S= 2 A

t_rr

Reverse Recovery Time

I_F= 3.3 A, di/dt = 100 A/μs

Q_rr

Reverse Recovery Charge

NOTES:

1. R

is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

is guaranteed by design while R

is determined by

θCA

θJA

θJC

the user's board design.

b) 125 °C/W when mounted

on a minimum pad of 2 oz

copper

a) 53 °C/W when mounted

ona1in padof 2oz copper

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. Starting T = 25 °C; N-ch: L = 1 mH, I = 8 A, V = 90 V, V = 10 V.

FDMC3612 Rev.C2

www.fairchildsemi.com

Typical Characteristics T_J= 25 °C unless otherwise noted

3.0

2.5

2.0

1.5

1.0

0.5

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

PULSE DURATION = 80 μs

V_GS= 10 V

V_GS= 3.5 V

DUTY CYCLE = 0.5% MAX

V_GS= 4.5 V

V_GS= 6 V

V_GS= 4 V

V_GS= 4.5 V

V_GS= 3.5 V

V_GS= 10 V

V_GS= 6 V

I_D, DRAIN CURRENT (A)

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure2. N o r m a l i z e d O n - R e s i s ta n c e

vs Drain Current and Gate Voltage

Figure 1. On Region Characteristics

400

2.4

I_D= 3.3 A

_GS= 10 V

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

I_D= 3.3 A

300

200

100

T_J= 125 ^o

T_J= 25 ^o

-75 -50 -25

25 50 75 100 125 150

V_GS, GATE TO SOURCE VOLTAGE (V)

T_J, JUNCTION TEMPERATURE (^oC)

Figure 3. Normalized On Resistance

vs Junction Temperature

Figure4. On-Resistance vs Gate to

Source Voltage

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

V_GS= 0 V

T_J= 150 ^o

V_DS= 5 V

T_J= 25 ^oC

T_J= 150 ^o

0.1

T_J= -55 ^o

T_J= 25 ^o

0.01

0.001

T_J= -55 ^o

2.0

2.5

3.0

3.5

4.0

4.5

5.0

0.2

0.4

0.6

0.8

1.0

1.2

V_GS, GATE TO SOURCE VOLTAGE (V)

V_SD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure6. Source to Drain Diode

Forward Voltage vs Source Current

FDMC3612 Rev.C2

www.fairchildsemi.com

Typical Characteristics T_J= 25 °C unless otherwise noted

1000

100

I_D= 3.3 A

C_iss

V_DD= 50 V

V_DD= 25 V

V_DD= 75 V

C_oss

f = 1 MHz

= 0 V

C_rss

0.1

100

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Q , GATE CHARGE (nC)

Figure 7. Gate Charge Characteristics

Figure8. C a p a c i t a n c e v s D r a i n

to Source Voltage

V_GS= 10 V

V_GS= 6 V

T_J= 25 ^oC

T_J= 100 ^oC

T_J= 125 ^o

_θJC= 3.5 ^oC/W

0.001

100

125

150

0.01

0.1

T_C, CASE TEMPERATURE (^oC)

t_AV, TIME IN AVALANCHE (ms)

Figure9. U n c l a m p e d I n d u c t i v e

Switching Capability

Figure10. Maximum Continuous Drain

Current vs Case Temperature

1000

SINGLE PULSE

_θJA= 125 ^oC/W

T_A= 25 ^oC

V_GS= 10 V

100 μs

100

0.1

1 ms

THIS AREA IS

10 ms

100 ms

LIMITED BY r

DS(on)

1 s

SINGLE PULSE

T_J= MAX RATED

10 s

0.01

0.001

_θJA= 125 ^oC/W

T_A= 25 ^oC

0.5

10^-4

10^-3

10^-2

t, PULSE WIDTH (sec)

10^-1

100 1000

0.1

100

500

V_DS, DRAIN to SOURCE VOLTAGE (V)

Figure 11. Forward Bias Safe

Operating Area

Figure12. Single Pulse Maximum

Power Dissipation

FDMC3612 Rev.C2

www.fairchildsemi.com

Typical Characteristics T_J= 25 °C unless otherwise noted

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.1

0.02

0.01

NOTES:

DUTY FACTOR: D = t /t

SINGLE PULSE

R_θJA= 125 ^oC/W

PEAK T = P

x Z

x R

+ T

θJA

θJA A

0.001

10^-4

10^-3

10^-2

10^-1

t, RECTANGULAR PULSE DURATION (sec)

100

1000

Figure 13. Junction-to-Ambient Transient Thermal Response Curve

FDMC3612 Rev.C2

www.fairchildsemi.com

Dimensional Outline and Pad Layout

FDMC3612 Rev.C2

www.fairchildsemi.com

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not

intended to be an exhaustive list of all such trademarks.

2Cool™

F-PFS™

FRFET

Global Power Resource

Green Bridge™

PowerTrench

PowerXS™

The Power Franchise

AccuPower™

AX-CAP™*

Programmable Active Droop™

BitSiC

QFET

TinyBoost™

TinyBuck™

TinyCalc™

Build it Now™

CorePLUS™

CorePOWER™

CROSSVOLT™

CTL™

Green FPS™

Green FPS™ e-Series™

Gmax™

GTO™

IntelliMAX™

ISOPLANAR™

QS™

Quiet Series™

RapidConfigure™

™

TinyLogic

TINYOPTO™

TinyPower™

TinyPWM™

TinyWire™

Current Transfer Logic™

Saving our world, 1mW/W/kW at a time™

DEUXPEED

Marking Small Speakers Sound Louder SignalWise™

Dual Cool™

EcoSPARK

EfficentMax™

ESBC™

and Better™

MegaBuck™

MICROCOUPLER™

MicroFET™

SmartMax™

TranSiC

SMART START™

Solutions for Your Success™

TriFault Detect™

TRUECURRENT *

SPM

μSerDes™

MicroPak™

STEALTH™

MicroPak2™

MillerDrive™

MotionMax™

Motion-SPM™

mWSaver™

OptoHiT™

SuperFET

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

Fairchild

UHC

Fairchild Semiconductor

FACT Quiet Series™

Ultra FRFET™

UniFET™

VCX™

VisualMax™

VoltagePlus™

XS™

SupreMOS

FACT

SyncFET™

Sync-Lock™

®*

FAST

OPTOLOGIC

OPTOPLANAR

FastvCore™

FETBench™

FlashWriter

FPS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY

PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY

THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE

EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

1. Life support devices or systems are devices or systems which, (a) are

intended for surgical implant into the body or (b) support or sustain life,

and (c) whose failure to perform when properly used in accordance with

instructions for use provided in the labeling, can be reasonably

expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, or

system whose failure to perform can be reasonably expected to cause

the failure of the life support device or system, or to affect its safety or

effectiveness.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,

www.Fairchildsemi.com, under Sales Support.

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their

parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed

application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the

proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild

Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild

Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of

up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and

warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is

committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Datasheet contains the design specifications for product development. Specifications

may change in any manner without notice.

Advance Information

Formative / In Design

Datasheet contains preliminary data; supplementary data will be published at a later

date. Fairchild Semiconductor reserves the right to make changes at any time without

notice to improve design.

Preliminary

First Production

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve the design.

No Identification Needed

Obsolete

Full Production

Datasheet contains specifications on a product that is discontinued by Fairchild

Semiconductor. The datasheet is for reference information only.

Not In Production

Rev. I61

www.fairchildsemi.com

FDMC3612 Rev.C2

FDMC3612相关文章

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FDMC3612产品参数

型号:	FDMC3612
Brand Name：	Fairchild Semiconductor
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Transferred
IHS 制造商：	FAIRCHILD SEMICONDUCTOR CORP
零件包装代码：	MLP
包装说明：	SMALL OUTLINE, S-PDSO-N5
针数：	8
制造商包装代码：	8LD, MLP, PUNCHED, DUAL, JEDEC MO-240, VARIATION BA, 3.3MM SQUARE
Reach Compliance Code：	compliant
ECCN代码：	EAR99
HTS代码：	8541.29.00.95
风险等级：	3.87
Is Samacsys：	N
雪崩能效等级（Eas）：	32 mJ
外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	100 V
最大漏极电流 (Abs) (ID)：	16 A
最大漏极电流 (ID)：	3.3 A
最大漏源导通电阻：	0.11 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	MO-240BA
JESD-30 代码：	S-PDSO-N5
JESD-609代码：	e4
湿度敏感等级：	1
元件数量：	1
端子数量：	5
工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	SQUARE
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	35 W
最大脉冲漏极电流 (IDM)：	15 A
认证状态：	Not Qualified
子类别：	FET General Purpose Powers
表面贴装：	YES
端子面层：	Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：	NO LEAD
端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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