FDMC4435BZ原理图各脚功能电路原理芯片引脚定义引脚图及功能-中国IC网-芯三七

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产品型号FDMC4435BZ的概述

FDMC4435BZ芯片概述 FDMC4435BZ是一款针对高效率电源管理应用设计的N通道MOSFET。这款芯片广泛用于DC-DC转换器、功率管理电路及其他高频开关应用。由于电源系统中对效率、散热和封装的严格要求，FDMC4435BZ在这些方面表现出色。其高开关速度和低导通电阻使得它在性能上具备了相当的竞争力。 FDMC4435BZ的设计用途涵盖范围广泛，尤其在移动设备、计算机和消费类电子产品的电源供应中扮演着重要角色。由于随着对高效率和小型化的需求增加，FDMC4435BZ还在一些新能源及工业自动化设备中应用日益频繁。芯片FDMC4435BZ的详细参数 FDMC4435BZ的核心参数包括： - 管脚配置：具有SOT-23-6封装形式，提供了6个引脚，便于在狭小的电路板设计中使用。 - V_DS最大值：其最大漏极-源极电压（V_DS）为30V，适用于中等电压应用。 - I_D最大值：...

产品型号FDMC4435BZ的Datasheet PDF文件预览

February 2008

FDMC4435BZ

P-Channel Power Trench^®MOSFET

-30V, -18A, 20.0mΩ

Features

General Description

Max r_DS(on)= 20.0mΩ at V_GS= -10V, I_D= -8.5A

Max r_DS(on)= 37.0mΩ at V_GS= -4.5V, I_D= -6.3A

Extended V_GSSrange (-25V) for battery applications

High performance trench technology for extremely low r_DS(on)

High power and current handling capability

HBM ESD protection level >7kV typical (Note 4)

100% UIL Tested

This P-Channel MOSFET is produced using Fairchild

Semiconductor’s advanced Power Trench^®process that has

been especially tailored to minimize the on-state resistance. This

devie is well suited for Power Management and load switching

applications common in Notebook Computers and Portable

Battery Packs.

Applications

High side in DC - DC Buck Converters

Notebook battery power management

Load switch in Notebook

Termination is Lead-free and RoHS Compliant

Top

Bottom

Pin 1

Power 33

MOSFET Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

-30

Units

Drain to Source Voltage

Gate to Source Voltage

±25

Drain Current -Continuous (Package limited)

-Continuous (Silicon limited)

-Continuous

T_C= 25°C

_C= 25°C

-18

-31

I_D

T_A= 25°C

(Note 1a)

(Note 3)

-8.5

-Pulsed

-50

E_AS

Single Pulse Avalanche Energy

Power Dissipation

T_C= 25°C

T_A= 25°C

P_D

Power Dissipation

(Note 1a)

2.3

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

°C/W

(Note 1a)

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

13’’

Tape Width

12mm

Quantity

FDMC4435BZ

Power 33

3000 units

FDMC4435BZ Rev.C

www.fairchildsemi.com

Electrical Characteristics T_J= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BV_DSS

Drain to Source Breakdown Voltage

I_D= -250µA, V_GS= 0V

-30

∆BV_DSS

∆T_J

Breakdown Voltage Temperature

Coefficient

I_D= -250µA, referenced to 25°C

mV/°C

V_DS= -24V,

-1

I_DSS

I_GSS

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

µA

V_GS= 0V,

T_J= 125°C

-100

±10

V_GS= ±25V, V_DS= 0V

On Characteristics

V_GS(th)

Gate to Source Threshold Voltage

V_GS= V_DS, I_D= -250µA

-1.0

-1.9

-5.3

-3.0

∆V_GS(th)

∆T_J

Gate to Source Threshold Voltage

Temperature Coefficient

I_D= -250µA, referenced to 25°C

mV/°C

V_GS= -10V, I_D= -8.5A

14.6

23.1

20.7

20.0

37.0

28.0

r_DS(on)

g_FS

Static Drain to Source On Resistance

Forward Transconductance

V_GS= -4.5V, I_D= -6.3A

mΩ

V_GS= -10V, I_D= -8.5A, T_J= 125°C

V_DD= -5V, I_D= -8.5A

Dynamic Characteristics

C_iss

C_oss

C_rss

R_g

Input Capacitance

1540

295

260

5.1

2045

395

Ω

V_DS= -15V, V_GS= 0V,

f = 1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

385

f = 1MHz

Switching Characteristics

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

Rise Time

V_DD= -15V, I_D= -8.5A,

V_GS= -10V, R_GEN= 6Ω

Turn-Off Delay Time

Fall Time

Q_g

Total Gate Charge

Gate to Source Charge

Gate to Drain “Miller” Charge

V _GS= 0 V t o - 1 0 V

Q_g

V_GS= 0V to -4.5V

V_DD= -15V,

I_D= -8.5A

Q_gs

Q_gd

Drain-Source Diode Characteristics

V_GS= 0V, I_S= -8.5A

V_GS= 0V, I_S= -1.9A

(Note 2)

0.92

1.5

1.2

V_SD

Source to Drain Diode Forward Voltage

0.75

t_rr

Reverse Recovery Time

I_F= -8.5A, di/dt = 100A/µs

Q_rr

NOTES:

Reverse Recovery Charge

is determined with the device mounted on a 1in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

is guaranteed by design while R is determined by

θCA

θJA

θJC

the user's board design.

a. 53°C/W when mounted on

a 1 in pad of 2 oz copper

b. 125°C/W when mounted on a

minimum pad of 2 oz copper

2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.

3. Starting T = 25°C, L = 1mH, I = -7A, V = -27V, V = -10V.

4. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

www.fairchildsemi.com

FDMC4435BZ Rev.C

Typical Characteristics T_J= 25°C unless otherwise noted

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

PULSE DURATION = 80µs

DUTY CYCLE = 0.5%MAX

V_GS= -4.5V

V_GS= -5V

V_GS= -3.5V

V_GS= -10V

V_GS= -4V

V_GS= -4.5V

V_GS= -5V

V_GS= -3.5V

PULSE DURATION = 80µs

DUTY CYCLE = 0.5%MAX

V_GS= -10V

40 50

-V_DS, DRAIN TO SOURCE VOLTAGE (V)

-I_D, DRAIN CURRENT(A)

Figure 1. On-Region Characteristics

Figure2. N o r m a l i z e d O n - R e s i s ta n c e

vs Drain Current and Gate Voltage

1.6

I_D= -8.5A

_GS= -10V

PULSE DURATION = 80µs

DUTY CYCLE = 0.5%MAX

1.4

1.2

1.0

0.8

0.6

I_D= -8.5A

T_J= 125^oC

T_J= 25^oC

-75 -50 -25

25 50 75 100 125 150

T_J, JUNCTION TEMPERATURE (^oC)

-V_GS, GATE TO SOURCE VOLTAGE (V)

F i gu re 3 . N orma li zed On - Res is ta nc e

vs Junction Temperature

Figure4. On-Resistance vs Gate to

Source Voltage

PULSE DURATION = 80µs

V_GS= 0V

DUTY CYCLE = 0.5%MAX

T_J= 150^oC

V_DS= -5V

T_J= 25^oC

0.1

T_J= 150^oC

0.01

0.001

T_J= -55^oC

T_J= 25^oC

T_J= -55^oC

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

-V_SD, BODY DIODE FORWARD VOLTAGE (V)

-V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure6. Source to Drain Diode

Forward Voltage vs Source Current

www.fairchildsemi.com

FDMC4435BZ Rev.C

Typical Characteristics T_J= 25°C unless otherwise noted

10000

1000

100

I_D= -8.5A

C_iss

V_DD= -15V

C_oss

V_DD= -10V

V_DD= -20V

C_rss

f = 1MHz

= 0V

0.1

Q_g, GATE CHARGE(nC)

-V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics

Figure8. C a p a c i t a n c e v s D r a i n

to Source Voltage

T_J= 25^oC

V_GS= -10V

V_GS= -4.5V

T_J= 125^oC

Limited by Package

_θJC= 4^oC/W

0.001

0.01

0.1

100

125

150

T_C, CASE TEMPERATURE (^oC)

t_AV, TIME IN AVALANCHE(ms)

Figure9. U n c l a m p e d I n d u c t i v e

Switching Capability

Figure10. Maximum Continuous Drain

Current vs Case Temperature

10^-4

100

V_DS= 0V

10^-5

100us

T_J= 125^oC

1ms

10^-6

10ms

THIS AREA IS

LIMITED BY r

DS(on)

100ms

SINGLE PULSE

T_J= MAX RATED

R_θJA= 125^oC/W

T_A= 25^oC

10^-7

0.1

T_J= 25^oC

10s

10^-8

0.01

0.1

100

-V_DS, DRAIN TO SOURCE VOLTAGE (V)

-V_GS, GATE TO SOURCE VOLTAGE(V)

Figure 11. Forward Bias Safe

Operating Area

Figure 12. Igss vs Vgss

www.fairchildsemi.com

FDMC4435BZ Rev.C

Typical Characteristics T_J= 25°C unless otherwise noted

100

V_GS= -10V

SINGLE PULSE

_θJA= 125^oC/W

T_A= 25^oC

0.5

10^-3

10^-2

10^-1

100

1000

t, PULSE WIDTH (sec)

Figure 13. Single Pulse Maximum Power Dissipation

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.02

0.01

0.1

NOTES:

DUTY FACTOR: D = t /t

SINGLE PULSE

_θJA= 125^oC/W

PEAK T = P

x Z

x R

+ T

θJA

θJA A

0.01

10^-3

10^-2

10^-1

100

1000

t, RECTANGULAR PULSE DURATION (sec)

Figure 14. Transient Thermal Response Curve

www.fairchildsemi.com

FDMC4435BZ Rev.C

Dimensional Outline and Pad Layout

www.fairchildsemi.com

FDMC4435BZ Rev.C

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global

subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

ACEx^®

PDP SPM™

The Power Franchise^®

FPS™

Build it Now™

CorePLUS™

CorePOWER™

CROSSVOLT™

CTL™

Current Transfer Logic™

EcoSPARK^®

EfficentMax™

EZSWITCH™ *

™

Power-SPM™

PowerTrench^®

Programmable Active Droop™

QFET^®

F-PFS™

FRFET^®

Global Power Resource^SM

Green FPS™

Green FPS™ e-Series™

GTO™

TinyBoost™

TinyBuck™

TinyLogic^®

TINYOPTO™

TinyPower™

TinyPWM™

TinyWire™

μSerDes™

QS™

Quiet Series™

RapidConfigure™

Saving our world, 1mW at a time™

SmartMax™

IntelliMAX™

ISOPLANAR™

MegaBuck™

MICROCOUPLER™

MicroFET™

SMART START™

SPM^®

STEALTH™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SupreMOS™

MicroPak™

UHC^®

Ultra FRFET™

UniFET™

VCX™

Fairchild^®

MillerDrive™

MotionMax™

Motion-SPM™

OPTOLOGIC^®

Fairchild Semiconductor^®

FACT Quiet Series™

FACT^®

OPTOPLANAR^®

FAST^®

VisualMax™

SyncFET™

FastvCore™

FlashWriter^{® *}

* EZSWITCH™ and FlashWriter^®are trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS

HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE

APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS

PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S

WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR

SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems 2. A critical component in any component of a life support,

which, (a) are intended for surgical implant into the body or

(b) support or sustain life, and (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in a significant injury of the user.

device, or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status

Definition

This datasheet contains the design specifications for product development.

Specifications may change in any manner without notice.

Advance Information

Preliminary

Formative / In Design

First Production

This datasheet contains preliminary data; supplementary data will be published

at a later date. Fairchild Semiconductor reserves the right to make changes at

any time without notice to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves

the right to make changes at any time without notice to improve the design.

No Identification Needed

Obsolete

Full Production

This datasheet contains specifications on a product that is discontinued by

Fairchild Semiconductor. The datasheet is for reference information only.

Not In Production

Rev. I34

www.fairchildsemi.com

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FDMC4435BZ产品参数

型号:	FDMC4435BZ
Brand Name：	Fairchild Semiconductor
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Transferred
零件包装代码：	MLP
包装说明：	SMALL OUTLINE, S-PDSO-N5
针数：	8
制造商包装代码：	8LD,MLP,DUAL, 3.3MM SQUARE
Reach Compliance Code：	compliant
ECCN代码：	EAR99
HTS代码：	8541.29.00.95
风险等级：	3.86
其他特性：	ULTRA-LOW RESISTANCE
雪崩能效等级（Eas）：	24 mJ
外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	30 V
最大漏极电流 (Abs) (ID)：	31 A
最大漏极电流 (ID)：	8.5 A
最大漏源导通电阻：	0.02 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	S-PDSO-N5
JESD-609代码：	e4
湿度敏感等级：	1
元件数量：	1
端子数量：	5
工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	SQUARE
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	P-CHANNEL
最大功率耗散 (Abs)：	31 W
最大脉冲漏极电流 (IDM)：	50 A
认证状态：	Not Qualified
子类别：	Other Transistors
表面贴装：	YES
端子面层：	Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：	NO LEAD
端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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