FDP8441现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

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产品型号FDP8441的概述

芯片FDP8441的概述 FDP8441是一款高效能的N沟道功率MOSFET，其广泛应用于各种电子设备中，尤其是在电源管理和开关电路中。该芯片特别设计用于高频率和高温度环境，具有优良的开关特性和低导通电阻，使其成为现代电源转换应用的理想选择。FDP8441的设计注重能够承受较高的电流和电压，使其在工业、汽车和通信等多个领域得以广泛应用。芯片FDP8441的详细参数 FDP8441的主要参数包括： - 类型: N沟道MOSFET - 最大漏极-源极电压 (V_DS): 30V - 最大漏极电流 (I_D): 90A（在适当散热情况下） - 导通电阻 (R_DS(on)): 0.035Ω（在V_GS = 10V时） - 输入电容 (C_iss): 1800pF - 输出电容 (C_oss): 180pF - 反向恢复时间 (t_rr): 50ns - 工作温度范围 (T_j): -55°...

产品型号FDP8441的Datasheet PDF文件预览

September 2006

FDP8441

N-Channel PowerTrench MOSFET

40V, 80A, 2.7mΩ

Features

Applications

Automotive Engine Control

Typ r_DS(on)= 2.1mΩ at V_GS= 10V, I_D= 80A

Powertrain Management

Typ Q_g(10)= 215nC at V_GS= 10V

Low Miller Charge

Solenoid and Motor Drivers

Low Q_rrBody Diode

Electronic Steering

UIS Capability (Single Pulse and Repetitive Pulse)

Qualified to AEC Q101

Integrated Starter / Alternator

Distributed Power Architectures and VRMs

Primary Switch for 12V Systems

RoHS Compliant

FDP8441 Rev.A

www.fairchildsemi.com

MOSFET Maximum Ratings T_C= 25°C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

±20

Drain Current Continuous (T_C< 160^oC, V_GS= 10V)

Continuous (T_amb= 25^oC, V_GS= 10V, with R_θJA= 62^oC/W)

Pulsed

I_D

See Figure 4

947

E_AS

Single Pulse Avalanche Energy

(Note 1)

W/^oC

^oC

Power dissipation

Derate above 25^oC

300

P_D

T_J, T_STG

Operating and Storage Temperature

-55 to 175

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance Junction to Case

Thermal Resistance Junction to Ambient

0.5

^oC/W

(Note 2)

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape Width

N/A

Quantity

FDP8441

TO-220AB

Tube

50 units

Electrical Characteristics T_J= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

B_VDSS

I_DSS

Drain to Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

I_D= 250µA, V_GS= 0V

V_DS= 32V

µA

V_GS= 0V

T_J= 150°C

250

±100

I_GSS

V_GS= ±20V

On Characteristics

V_GS(th)

r_DS(on)

Gate to Source Threshold Voltage

Drain to Source On Resistance

V_DS= V_GS, I_D= 250µA

2.8

2.1

I_D= 80A, V_GS= 10V

2.7

mΩ

I_D= 80A, V_GS= 10V,

T_J= 175°C

3.6

4.7

Dynamic Characteristics

C_iss

Input Capacitance

15000

1250

685

1.1

Ω

V_DS= 25V, V_GS= 0V,

f = 1MHz

C_oss

C_rss

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

R_G

V_GS= 0.5V, f = 1MHz

V_GS= 0 to 10V

280

Q_g(TOT)

Q_g(TH)

Q_gs

Total Gate Charge at 10V

Threshold Gate Charge

Gate to Source Gate Charge

Gate Charge Threshold to Plateau

Gate to Drain “Miller” Charge

215

V_GS= 0 to 2V

V_DD= 20V

I_D= 35A

I_g= 1mA

Q_gs2

Q_gd

FDP8441 Rev.A

www.fairchildsemi.com

Electrical Characteristics T_J= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Switching Characteristics

t_(on)

t_d(on)

t_r

Turn-On Time

17.9

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Turn-Off Time

_DD= 20V, I_D= 35A

_GS= 10V, R_GS= 1.5Ω

t_d(off)

t_f

t_off

147

Drain-Source Diode Characteristics

_SD= 35A

0.8

1.25

1.0

V_SD

Source to Drain Diode Voltage

I_SD= 15A

t_rr

Reverse Recovery Time

I_F= 35A, di/dt = 100A/µs

Q_rr

Reverse Recovery Charge

Notes:

1: Starting T = 25 C, L = 0.46mH, I = 64A.

2: Pulse width = 100s.

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For

a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

certification.

FDP8441 Rev.A

www.fairchildsemi.com

Typical Characteristics

300

250

200

150

100

1.2

1.0

0.8

0.6

0.4

0.2

0.0

CURRENT LIMITED

BY PACKAGE

V_GS= 10V

100

125

150

175

100

125

150

175

T_C, CASE TEMPERATURE(^oC)

Figure 1. Normalized Power Dissipation vs Case

Temperature

Figure 2. Maximum Continuous Drain Current vs

Case Temperature

DUTY CYCLE - DESCENDING ORDER

D = 0.50

0.20

0.10

0.05

0.02

0.1

0.01

NOTES:

DUTY FACTOR: D = t /t

PEAK T = P

x Z

x R

+ T

θJC

θJC C

SINGLE PULSE

1E-3

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

10¹

t, RECTANGULAR PULSE DURATION(s)

Figure 3. Normalized Maximum Transient Thermal Impedance

10000

1000

100

V_GS= 10V

TRANSCONDUCTANCE

MAY LIMIT CURRENT

IN THIS REGION

T_C= 25^oC

FOR TEMPERATURES

ABOVE 25^oC DERATE PEAK

CURRENT AS FOLLOWS:

175 - T_C

I = I₂₅

150

SINGLE PULSE

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

10¹

t, RECTANGULAR PULSE DURATION(s)

Figure 4. Peak Current Capability

FDP8441 Rev.A

www.fairchildsemi.com

Typical Characteristics

4000

1000

500

100

If R = 0

= (L)(I )/(1.3*RATED BV

- V

)

DSS

10us

If R

≠ 0

= (L/R)ln[(I *R)/(1.3*RATED BV

- V ) +1]

DSS DD

100us

100

STARTING T_J= 25^oC

LIMITED

BY PACKAGE

STARTING T_J= 150^oC

1ms

10ms

OPERATION IN THIS SINGLE PULSE

AREA MAY BE

LIMITED BY r

= MAX RATED

DS(on)

= 25 C

0.1

0.01

0.1

100

1000 5000

100

V_DS, DRAIN TO SOURCE VOLTAGE (V)

t_AV, TIME IN AVALANCHE (ms)

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

Figure 6. Unclamped Inductive Switching

Capability

Figure 5. Forward Bias Safe Operating Area

160

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

V_GS= 10V

V_GS= 5V

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

V_DD= 5V

120

V_GS= 4.5V

T_J= 175^oC

V_GS= 4V

T_J= 25^oC

T_J= -55^oC

V_GS= 3.5V

2.0

2.5

3.0

3.5

4.0

4.5

5.0

V_DS, DRAIN TO SOURCE VOLTAGE (V)

V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 7. Transfer Characteristics

Figure 8. Saturation Characteristics

1.8

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

1.6

1.4

1.2

1.0

0.8

0.6

T_J= 25^oC

T_J= 175^oC

I_D= 80A

_GS= 10V

-80

-40

120

160

200

T_J, JUNCTION TEMPERATURE( C)

V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 9. Drain to Source On-Resistance

Variation vs Gate to Source Voltage

Figure 10. Normalized Drain to Source On

Resistance vs Junction Temperature

FDP8441 Rev.A

www.fairchildsemi.com

Typical Characteristics

1.15

1.10

1.05

1.00

0.95

0.90

1.2

I_D= 250µA

V_GS= V_DS

I_D= 250µA

1.0

0.8

0.6

0.4

-80

-40

120

160

200

-80

-40

120

160

200

T_J, JUNCTION TEMPERATURE(^oC)

T_J, JUNCTION TEMPERATURE (^oC)

Figure 11. Normalized Gate Threshold Voltage vs

Junction Temperature

Figure 12. Normalized Drain to Source

Breakdown Voltage vs Junction Temperature

40000

I_D= 80A

C_iss

V_DD= 15V

10000

V_DD= 25V

C_oss

V_DD= 20V

1000

C_rss

f = 1MHz

V_GS= 0V

100

0.1

100

150

200

250

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Q_g, GATE CHARGE(nC)

Figure 13. Capacitance vs Drain to Source

Voltage

Figure 14. Gate Charge vs Gate to Source Voltage

FDP8441 Rev.A

www.fairchildsemi.com

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not

intended to be an exhaustive list of all such trademarks.

ACEx™

FACT Quiet Series™

GlobalOptoisolator™

GTO™

OCX™

OCXPro™

SILENT SWITCHER^®

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SPM™

UniFET™

UltraFET^®

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CROSSVOLT™

DOME™

OPTOLOGIC^®

OPTOPLANAR™

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POP™

HiSeC™

Stealth™

Wire™

I²C™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

TCM™

TinyBoost™

TinyBuck™

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TINYOPTO™

TruTranslation™

UHC™

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ImpliedDisconnect™

IntelliMAX™

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LittleFET™

MICROCOUPLER™

MicroFET™

MicroPak™

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Across the board. Around the world.™

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DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS

HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE

APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS

PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S

WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS

WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body, or

(b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. I20

www.fairchildsemi.com

FDP8441 Rev.A

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