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Provisional Data Sheet No. PD-9.337E

JANTX2N6764

JANTXV2N6764

HEXFET^®POWER MOSFET

[REF:MIL-PRF-19500/543]

[GENERIC:IRF150]

N-CHANNEL

100 Volt, 0.055Ω HEXFET

Product Summary

Part Number

JANTX2N6764

JANTXV2N6764

BVDSS

RDS(on)

ID

HEXFETtechnology is the key to International Rectifier’s

advanced line of power MOSFET transistors.The effi-

cient geometry achieves very low on-state resistance

combined with high transconductance.

100V

38A

0.055Ω

HEXFET transistors also feature all of the well-establish

advantages of MOSFETs, such as voltage control, very

fast switching, ease of paralleling and electrical param-

eter temperature stability. They are well-suited for appli-

cations such as switching power supplies, motor

controls, inverters, choppers, audio amplifiers, and high

energy pulse circuits, and virtually any application where

high reliability is required.

Features:

■ Avalanche Energy Rating

■ Dynamic dv/dt Rating

■ Simple Drive Requirements

■ Ease of Paralleling

■ Hermetically Sealed

Absolute Maximum Ratings

Parameter

JANTX2N6764, JANTXV2N6764 Units

I

@ V

= 10V, T = 25°C Continuous Drain Current

38

D

GS

C

A

I

D

@ V

= 10V, T = 100°C Continuous Drain Current

24

152

GS

C

I

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

DM

@ T = 25°C

P

150

W

W/K ➄

V

D

C

1.2

V

Gate-to-Source Voltage

Single Pulse Avalanche Energy ➁

Avalanche Current ➀

±20

GS

E

150

mJ

AS

I

38

A

AR

E

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➂

Operating Junction

15

mJ

AR

dv/dt

5.5

V/ns

T

-55 to 150

J

^oC

g

T

Storage Temperature Range

Lead Temperature

STG

(0.063 in. (1.6mm) from

case for 10 seconds)

11.5 (typical)

300

Weight

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JANTX2N6764, JANTXV2N6764 Device

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min. Typ. Max. Units

Test Conditions

BV

Drain-to-Source Breakdown Voltage

100

—

V

= 0V, I = 1.0 mA

D

DSS

GS

V/°C Reference to 25°C, I = 1.0 mA

∆BV

/∆T Temperature Coefficient of Breakdown

0.13

DSS

J

D

Voltage

➃

= 10V, I = 24A

D

R

Static Drain-to-Source

On-State Resistance

GateThreshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

—

2.0

9

—

0.055

0.065

4.0

—

25

V

DS(on)

GS

Ω

V

S ( )

= 10V, I = 38A

D

V

g

V

= V , I = 250µA

GS(th)

fs

DS

GS

D

Ω

> 15V, I

= 24A ➃

DS

I

V

DS

= 0.8 x Max Rating,V = 0V

GS

DSS

µA

250

V

= 0.8 x Max Rating

DS

V

= 0V, T = 125°C

J

GS

I

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain (“Miller”) Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

FallTime

Internal Drain Inductance

—

50

8

25

—

5.0

100

-100

125

22

65

35

190

170

130

—

V

= 20V

= -20V

GSS

GS

nA

nC

I

V

GS

GSS

Q

t

V

= 10V, I = 38A

GS D

= Max. Rating x 0.5

see figures 6 and 13

V = 50V, I = 38A,

DD

= 2.35Ω, VGS= 10V

g

gs

gd

d(on)

r

d(off)

f

D

S

V

DS

D

R

G

ns

see figure 10

Measured from the

drain lead, 6mm (0.25

in.) from package to

center of die.

Modified MOSFET

symbol showing the

internal inductances.

L

nH

pF

Measured from the

source lead, 6mm

(0.25 in.) from package

to source bonding pad.

L

Internal Source Inductance

—

13

—

C

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

—

3700

1100

200

—

V

= 0V, V

f = 1.0 MHz

see figure 5

= 25V

DS

iss

oss

rss

GS

Source-Drain Diode Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Test Conditions

I

Continuous Source Current (Body Diode)

Pulse Source Current (Body Diode) ➀

—

38

152

Modified MOSFET symbol showing the

integral reverse p-n junction rectifier.

S

SM

A

V

t

Q

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

—

1.8

500

2.9

V

ns

µC

T = 25°C, I = 38A, V

= 0V ➃

j

SD

rr

RR

S

GS

T = 25°C, I = 38A, di/dt ≤ 100A/µs

j

F

V

≤ 50V ➃

DD

t

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .

S D

on

Thermal Resistance

Parameter

Min. Typ. Max. Units

Test Conditions

R

Junction-to-Case

—

0.83

thJC

thJA

Junction-to-Ambient

—

48

K/W

Typical socket mount

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JANTX2N6764, JANTXV2N6764 Device

Fig. 1 — Typical Output Characteristics

T_C= 25°C

Fig. 2 — Typical Output Characteristics

T_C= 150°C

Fig. 3 — Typical Transfer Characteristics

Fig. 4 — Normalized On-Resistance Vs.Temperature

Fig. 5 — Typical Capacitance Vs. Drain-to-Source

Voltage

Fig. 6 — Typical Gate Charge Vs. Gate-to-Source

Voltage

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JANTX2N6764, JANTXV2N6764 Device

Fig. 7 — Typical Source-to-Drain Diode Forward

Voltage

Fig. 8 — Maximum Safe Operating Area

Fig. 9 — Maximum Drain Current Vs. Case Temperature

Fig. 10b — Switching Time Waveforms

Fig. 10a — Switching Time Test Circuit

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JANTX2N6764, JANTXV2N6764 Device

Fig. 11 — Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration

Fig. 12b — Unclamped Inductive Waveforms

Fig. 12a — Unclamped Inductive Test Circuit

Fig. 12c — Max. Avalanche Energy vs. Current

Fig. 13a — Gate Charge Test Circuit

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JANTX2N6764, JANTXV2N6764 Device

➀ Repetitive Rating; Pulse width limited by

maximum junction temperature.

(see figure 11)

➁ @ V

= 25V, Starting T = 25°C,

J

DD

= [0.5

2

E

L

(I ) [BV

/(BV

-V )]

DSS DD

AS

*

DSS

L

Peak I = 38A, V

= 10V, 25 ≤ R ≤ 200Ω

L

GS

G

➂ I

SD

≤ 38A, di/dt≤ 200A/µs,

V

≤ BV

, T ≤ 150°C

DSS J

DD

➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

➄ K/W = °C/W

W/K = W/°C

Fig. 13b — Basic Gate Charge Waveform

Case Outline and Dimensions — TO-204AA(Modified TO-3)

All dimensions are shown millimeters (inches)

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371

http://www.irf.com/

Dataandspecificationssubjecttochangewithoutnotice.

10/96

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