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产品型号JANTXV2N6896的Datasheet PDF文件预览

This is an advance copy of the dated document. The final document from Defense Automated Printing Service may be  
slightly different in format due To electronic conversion processes. Actual technical content will be the same.  
The documentation and process conversion  
measures necessary to comply with this revision  
shall be completed by 21 August 1999  
INCH-POUND  
MIL-PRF-19500/565B  
21 May 1999  
SUPERSEDING  
MIL-S-19500/565A  
7 October 1987  
PERFORMANCE SPECIFICATION SHEET  
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL,  
SILICON TYPES 2N6895, 2N6896, 2N6897, AND 2N6898  
JAN, JANTX, JANTXV AND JANS  
This specification is approved for use by all Depart-  
ments and Agencies of the Department of Defense.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor.  
Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.  
1.2 Physical dimensions. See figures 1 and 2, TO-205AF (formerly TO-39) for 2N6895, TO-204AA for 2N6896 and 2N6897; and  
TO-204AE for 2N6898 (formerly TO – 3).  
1.3 Maximum ratings. Unless otherwise specified, T = +25°C.  
A
Type  
P
T
1/  
P
T
V
DS  
V
DG  
V
GS  
I
2/  
I
2/  
I
S
I
T and  
J
D1  
D2  
DM  
T
T
= +25°C  
T
= +25°C  
T
= +25°C  
T = +100°C  
C
STG  
C
A
C
W
W
V dc  
100  
V dc  
100  
V dc  
±20  
A dc  
A dc  
A dc  
A(pk)  
°C  
-55 to +150  
2N6895  
2N6896  
2N6897  
2N6898  
8.33  
60  
100  
150  
0.6  
4
4
1.16  
6.0  
12  
0.74  
3.8  
7.6  
1.16  
6.0  
12  
5
20  
30  
60  
4
25  
15.8  
25  
1/ Derate linearly T > +25°C – 2N6895 (0.067 W/°C), 2N6896 (0.48 W/°C), 2N6897 (0.8 W/°C), 2N6898 (1.2 W/°C).  
C
P(rated)  
2/ Derate above T = +25 °C according to the formula  
C
ID  
=
K
where P(rated) = P – (T = -25) (W/°C) watts;  
T
C
K = max r  
DS(on)  
at T =+150°C.  
J
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document  
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad St., Columbus, OH  
43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this  
document or by letter.  
AMSC N/A  
FSC 5961  
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.  
MIL-PRF-19500/565B  
1.4 Primary electrical characteristics at T = +25°C.  
C
Type  
Min V  
V
V
Max I  
Max r  
1/  
= -10 V dc  
(BR)DSS  
= 0 V  
GS(th)1  
DSS1  
= 0 V  
DS(on)  
RQJC  
V
GS  
V
GS  
V
DS  
³ V  
GS  
GS  
I
D
= -1.0 mA dc  
I
D
= -1.0 mA dc  
V
DS  
= 80 percent  
of  
T
= +25°C  
T = +150°C  
J
J
at I  
D1  
at I  
D2  
rated V  
DS  
V dc  
-100  
V dc  
Min Max  
-2.0 -4.0  
Ohm  
Ohm  
mA dc  
-1.0  
°C/W  
2N6895  
2N6896  
2N6897  
2N6898  
3.65  
0.6  
0.3  
0.2  
6.15  
1.67  
0.69  
0.24  
15.0  
2.083  
1.25  
0.83  
1/ Pulsed (see 4.5.1).  
2. APPLICABLE DOCUMENTS  
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include  
documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has  
been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements  
documents cited in section 3 and 4 of this specification, whether or not they are listed.  
2.1.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document  
to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department  
of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2).  
SPECIFICATION  
DEPARTMENT OF DEFENSE  
MIL-PRF-19500  
STANDARD  
MILITARY  
MIL-STD-750  
- Semiconductor Devices, General Specification for.  
-
Test Methods for Semiconductor Devices.  
(Unless otherwise indicated, copies of federal and military specifications, standards, and handbooks are available from the  
Standardization Documents Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)  
2.2 Order of precedence. In the event of a conflict between the text of this specification and the references cited herein, the text of this  
specification takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific  
exemption has been obtained.  
3. REQUIREMENTS  
3.3 Associated specification. The individual item requirements shall be in accordance with MIL-PRF-19500 and as specified herein.  
2
MIL-PRF-19500/565B  
FIGURE 1. Physical dimensions for 2N6895 (TO-205AF).  
3
MIL-PRF-19500/565B  
1/  
Ltr  
Dimensions  
Notes  
Inches  
Max  
Millimeters  
Min  
Min  
.305  
.160  
.335  
.009  
.028  
.029  
.016  
.500  
Max  
8.51  
4.57  
9.40  
1.04  
0.86  
1.14  
0.53  
19.05  
CD  
CH  
HD  
h
.335  
.180  
.370  
.041  
.034  
.045  
.021  
.750  
7.75  
4.07  
8.51  
0.23  
0.71  
0.74  
0.41  
12.70  
j
2
k
3
LD  
LL  
LS  
LU  
7,8  
7,8  
6
.200 TP  
5.08 TP  
.016  
.019  
.050  
0.41  
0.48  
1.27  
7,8  
7,8  
L
1
2
L
.250  
.100  
6.35  
2.54  
7,8  
P
5
4
9
6
Q
r
.050  
.010  
1.27  
0.25  
45 TP  
45 TP  
a
NOTES:  
1. Dimensions are in inches. Metric equivalents are given for general information only.  
2. Beyond radius (r) maximum, j shall be held for a minimum length of 0.011 (0.028 mm).  
3. Dimension k measured from maximum HD.  
4. Outline in this zone is not controlled.  
5. Dimension CD shall not vary more than 0.010 (0.25 mm) in zone P. This zone is controlled for automatic handling.  
6. Leads at gauge plane 0.054 + 0.001, -0.000 (1.37 +0.03, -0.00 mm) below seating plane shall be within 0.007 (0.18 mm) radius  
of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct  
methods.  
7. LU applies between L and L . LD applies between L and L minimum. Diameter is uncontrolled in L and beyond LL  
1
2
2
1
minimum.  
8. All three leads.  
9. Radius (r) applies to both inside corners of tab.  
10. Drain is electrically connected to the case.  
FIGURE 1. Physical dimensions for 2N6895 (TO – 205AF) Continued.  
4
MIL-PRF-19500/565B  
1/  
Dimensions  
Symbol  
Inches  
Millimeters  
Notes  
Min  
Max  
Min  
Max  
CD  
CH  
.875  
.360  
.525  
.188  
.135  
.043  
.500  
.050  
.161  
1.197  
.440  
.225  
.675  
22.23  
9.14  
.250  
.495  
.131  
.060  
.038  
.312  
6.35  
12.57  
3.33  
1.52  
0.97  
7.92  
HR  
13.34  
4.78  
HR1  
HT  
3.43  
LD  
1.09  
LL  
12.70  
1.27  
LL1  
MHD  
MHS  
PS  
.151  
1.177  
.420  
.205  
.655  
3.84  
29.90  
10.67  
5.21  
4.09  
30.40  
11.18  
5.72  
3, 5  
3, 5  
PS1  
s1  
16.64  
17.15  
NOTES:  
1. Dimensions are in inches.  
2. Metric equivalents are given for general information only.  
3. These dimensions should be measured at points 0.050 inch (1.27 mm) and 0.055 inch (1.40 mm) below seating plane.  
Measurement will be made at the seating plane.  
4. The seating plane of the header shall be flat within 0.001 inch (0.03 mm) concave to 0.004 inch (0.10 mm) convex inside a 0.930  
inch (23.62 mm) diameter circle on the center of the header and flat within 0.001 inch (0.03 mm) concave to 0.006 inch (0.15  
mm) convex overall.  
5. Mounting holes shall be deburred on the seating plane side.  
6. Drain is electrically connected to the case.  
FIGURE 2. Physical dimensions of transistor 2N6896,2N6897, 2N6898 (TO-204AA and TO-204).  
5
MIL-PRF-19500/565B  
3.2 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-  
19500 and as follows:  
C - - - - - - - - - - - - - - - - - - - - -  
Coulomb.  
3.3 Interface requirements and physical dimensions. The Interface requirements and physical dimensions shall be as specified in  
MIL-PRF-19500, MIL-HDBK-6100 and figures 1 and 2, TO-205AF (formerly TO-39) for 2N6895, TO-204AA for 2N6896 and 2N6897;  
and TO-204AE for 2N6898 herein.  
3.3.1 Lead material and finish. Lead material shall be Kovar, Alloy 52 for T0-205AF, and a copper core or plated core is permitted  
Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired,  
it shall be specified in the acquisition document (see 6.2).  
3.3.2 Internal construction. Multiple chip construction shall not be permitted.  
3.4 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of the manufacturer, marking of country of origin  
may be omitted from the body of the transistor, but shall be retained on the initial container.  
3.5 Electrostatic discharge protection. The devices covered by this specification require electrostatic protection.  
3.5.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to the accumulation of static charge.  
The following handling practices shall be followed:  
a. Devices shall be handled on benches with conductive handling devices.  
b. Ground test equipment, tools, and personnel handling devices.  
c. Do not handle devices by the leads.  
d. Store devices in conductive foam or carriers.  
e. Avoid use of plastic, rubber, or silk in MOS areas.  
f.  
Maintain relative humidity above 50 percent if practical.  
g. Care shall be exercised, during test and troubleshooting, to apply not more than maximum rated voltage to any lead.  
h. Gate must be terminated to source, R £ 100 k, whenever bias voltage is to be applied drain to source.  
3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as  
specified in 1.3, 1.4, and table I.  
3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and 4.4.3.  
3.8 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing  
on the applicable qualified manufacturer's list (QML) before contract award (see 4.2 and 6.2 ).  
4. VERIFICATION  
4.1 Classification of Inspections. The inspection requirements specified herein are classified as follows:  
a. Qualification inspection (see 4.2).  
b. Screening (see 4.3).  
c. Conformance inspection (see 4.4).  
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and table II herein. Alternate flow is  
allowed for qualification inspection in accordance with figure 4 of MIL-PRF-19500.  
6
MIL-PRF-19500/565B  
4.2.1 Group E inspection. Group E inspection shall be conducted in accordance with MIL-PRF-19500.  
4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table IV of MIL-PRF-19500 and as  
specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I  
herein shall not be acceptable.  
Screen (see table IV of  
MIL-PRF-19500)  
Measurement  
JANS level  
JANTX and JANTXV levels  
Test condition G  
3
Test condition G  
1/ 2/  
Method 3470 (see 4.5.4)  
Method 3161 (see 4.5.3)  
Method 3470 (see 4.5.4)  
Method 3161 (see 4.5.3)  
1/  
9
I
I
, gate stress test (see 4.5.5),  
Gate stress test (see 4.5.5), subgroup 2 of table I  
herein  
GSS1, DSS1  
subgroup 2 of table I herein  
Method 1042, test condition B  
Subgroup 2 of table I herein;  
10  
11  
Method 1042, test condition B  
Subgroup 2 of table I herein.  
I
, I  
, r  
, V  
,
I
, I  
, r  
, V  
GSS1 DSS1 DS(on)1 GS(th)1  
GSS1 DSS1 DS(on)1 GS(th)1  
DI  
= ± 20 nA dc or ±100 percent of initial  
GSS1  
value, whichever is greater.  
DI = ± .2 mA dc or ±100 percent of initial  
DSS1  
value, whichever is greater.  
12  
13  
Method 1042, test condition A and test condition  
C. (see 4.3.1)  
Method 1042, test condition A  
Subgroup 2 of table I herein;  
Subgroups 2 and 3 of table I herein;  
DI  
GSS1  
= ± 20 nA dc or ±100 percent of initial  
DI = ± 20 nA dc or ±100 percent of initial  
GSS1  
value, whichever is greater.  
DI = ± .2 mA dc or ±100 percent of initial  
value, whichever is greater.  
DI = ± .2 mA dc or ±100 percent of initial  
DSS1  
value, whichever is greater.  
DSS1  
value, whichever is greater.  
Dr  
= ± 20 percent of initial value.  
Dr  
= ± 20 percent of initial value.  
= ± 20 percent of initial value.  
GS(th)1  
DS(on)1  
DV  
DS(on)1  
DV  
= ± 20 percent of initial value.  
GS(th)1  
1/ Shall be performed anytime before screen 9.  
2/ Method 3470 is optional if performed as a sample in group A, subgroup 5.  
4.3.1 Power burn-in. Power burn-in conditions are as follows: MIL-STD-750, method 3161, condition C, T = +25°C, -5°C, +10°C,  
A
V
DS  
= 10 V min.; ID adjusted to meet a junction temperature of 140°C, - 5°C, + 10°C, t = 240 hours.  
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. Alternate flow is allowed for  
quality conformance inspection in accordance with figure 4 of MIL-PRF-19500.  
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. Electrical  
measurements (end-points) shall be in accordance with the inspections of table II herein.  
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in  
table VIa (JANS) and table VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and herein. Electrical measurements (end-points) shall  
be in accordance with the inspections of table II herein.  
7
MIL-PRF-19500/565B  
4.4.2.1 Group B inspection table VIa (JANS) of MIL-PRF-19500.  
Subgroup  
Method  
1051  
Conditions  
3
4
Test condition G.  
1042  
Test condition D; 2,000 cycles. The heating cycle shall be 1 minute minimum.  
2N6895, V = -10 V dc, P = 4 W at T = +25°C ± 3°C.  
T
DS  
2N6897, 2N6898, V  
A
= -20 V dc, P = 0.6 W at T = +25°C ± 3°C.  
T
DS  
A
5
1042  
Accelerated steady-state operation life; test condition C; T = + 25°C, - 5°C, + 10°C, V = 10 V  
DS  
A
min.; I adjusted to meet a junction temperature of 140°C, - 0°C, + 10°C, t = 240 hours.  
D
5
6
2037  
3161  
Bond strength (Al-Au die interconnects only); test condition A.  
See 4.5.2.  
4.4.2.2 Group B inspection, table VIb (JANTX and JANTXV) of MIL-PRF-19500.  
Subgroup  
Method  
1051  
Condition  
2
3
Test condition G, 25 cycles.  
1042  
Test condition D, 2,000 cycles. The heating cycle shall be 1 minute minimum.  
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in  
table VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with the inspections of table II  
herein.  
Subgroup  
Method  
2036  
Condition  
2
6
Test condition E .  
1042  
Test condition D, 6,000 cycles. The heating cycle shall be 1 minute minimum.  
4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in  
table IX of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with the inspections of table II  
herein. 1/  
Subgroup  
E1  
Method  
1051  
Condition  
Sampling plan  
Test Condition G, 500 cycles  
Electrical measurements  
45 devices, c = 0  
See table II, steps 1, 2, 3, 4, 5, 6, and 7.  
E2  
E2  
1042  
1042  
Test condition A, 1,000 hours.  
Electrical measurements  
See table II, steps 1, 2, 3, 4, 5, 6, and 7.  
45 devices, c = 0  
45 devices, c = 0  
Test condition B, 1,000 hours.  
Electrical measurements  
See table II, steps 1, 2, 3, 4, 5, 6, and 7.  
E3  
E4  
Not applicable  
3161  
R
see 1.4  
5 devices, c = 0  
qJC  
E5  
Not applicable  
_______  
1/ A separate sample may be pulled for each test.  
8
MIL-PRF-19500/565B  
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.  
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.  
4.5.2 Thermal impedance. Thermal impedance measurements shall be performed in accordance with method 3161 of MIL-STD-750.  
= (2N6895 = 15.0°C/W, 2N6896 = 2.083°C/W, 2N6897 = 1.25°C/W, 2N6898 = 0.83°C/W.  
t
H
= Steady-state (see  
RQJC(max)  
MIL-STD-750, method 3161 for definition).  
2N6895  
2N6896  
10 mA  
2N6897  
10 mA  
2N6898  
10 mA  
10 mA  
0.6 A  
I
M
2 A  
3.5 A  
20 V  
4 A  
I
H
10 V  
20 V  
25 V  
V
H
t
10 – 80 ms  
10 ms max.  
10 – 80 ms  
10 ms max.  
10 – 80 ms  
10 ms max.  
10 – 80 ms  
10 ms max.  
MD  
t
SW  
4.5.3 Thermal response (DV  
SD  
measurements). The DV measurements shall be performed in accordance with MIL-STD-750,  
SD  
method 3161. The DV conditions (I and V ) and maximum limit shall be derived by each vendor from the thermal response curves  
SD  
H
H
(see figure 3) and shall be specified in the certificate of conformance prior to qualification. The following parameter measurements shall  
apply.  
2N6895  
10 mA  
2N6896  
10 mA  
2N6897  
10 mA  
2N6898  
10 mA  
I
M
0.6 A  
10 V  
2 A  
3.5 A  
20 V  
4 A  
I
H
20 V  
25 V  
V
H
t
10 – 80 ms  
10 ms max.  
10 – 80 ms  
10 ms max.  
10 – 80 ms  
10 ms max.  
10 – 80 ms  
10 ms max.  
MD  
SW  
t
4.5.4 Unclamped inductive switching.  
a. Peak current (I )  
D
2N6895  
2N6896  
2N6897  
2N6898  
1 A  
2.7 A  
5 A  
5.9 A  
b. Peak gate voltage (V ) ............................................................10 V.  
GS  
c. Gate to source resistor (R ) ...................................................25W £ R  
GS  
£ 200W.  
GS  
d. Initial case temperature (T ) .....................................................+25°C, +10°C, -5°C.  
C
e. Inductance (L).............................................................................100 mH ±10 percent.  
f.  
Number of pulses to be applied ..................................................1 pulse minimum.  
g. Pulse repetition rate....................................................................None.  
4.5.5 Gate stress test.  
V
= - 30 V minimum.  
GS  
t = 250 ms minimum.  
9
MIL-PRF-19500/565B  
TABLE I. Group A inspection.  
MIL-STD-750  
Inspection 1/  
Subgroup 1  
Symbol  
Limits  
Unit  
Method  
2071  
Conditions  
Min  
Max  
Visual and mechanical  
inspection  
Subgroup 2  
Breakdown voltage, drain to  
source  
3407  
Bias condition C, V  
GS  
= 0 V;  
V
-100  
(BR)DSS  
I
D
= -1.0 mA dc  
Gate to source voltage  
(threshold)  
3403  
3411  
V
> V ; I = -0.25 mA dc  
GS  
V
-2.0  
-4.0  
V dc  
DS  
D
GS(th)1  
Gate current  
Bias condition C; V  
DS  
= 0 V;  
I
nA dc  
±100  
GSS1  
V
GS  
= +20 and -20 V dc  
Drain current  
3413  
3421  
V
V
= 0; bias condition C;  
= -80 V  
I
-1.0  
mA dc  
GS  
DS  
DSS1  
Static drain to source on-state  
resistance  
V
GS  
= -10 V dc; condition A; pulsed  
r
ohms  
DS(on)1  
(see 4.5.1)  
2N6895  
2N6896  
2N6897  
2N6898  
3.65  
0.6  
0.3  
0.2  
I
D
I
D
I
D
I
D
= -0.74 A dc  
= -3.8 A dc  
= -7.6 A dc  
= -15.8 A dc  
Drain to source on-state voltage  
3405  
V
= 10 V dc; condition A; pulsed  
V
V
GS  
(see 4.5.1)  
DS(on)1  
2N6895  
2N6896  
2N6897  
2N6898  
-6.0  
-6.0  
-4.8  
-6.0  
I
D
I
D
I
D
I
D
= -1.16 A dc  
= -6.0 A dc  
= -12.0 A dc  
= -25.0 A dc  
Forward voltage (source drain  
diode)  
4011  
Pulsed (see 4.5.1); V  
GS  
= 0 V  
V
SD  
-0.8  
-1.6  
V
2N6895  
I
S
I
S
I
S
I
S
= -1.16 A dc  
= -6.0 A dc  
= -12.0 A dc  
= -25.0 A dc  
2N6896  
2N6897  
2N6898  
See footnotes at end of table.  
10  
MIL-PRF-19500/565B  
TABLE I. Group A inspection - Continued.  
MIL-STD-750  
Inspection 1/  
Symbol  
Limits  
Unit  
Method  
3475  
Conditions  
Min  
Max  
Subgroup 2 continued  
s
g
fs  
Forward transconductance  
Pulsed (see 4.5.1), I = rated  
D
I
D
=(see 1.3).  
2
2N6895  
2N6896  
2N6897  
2N6898  
0.2  
1.0  
2.0  
4.0  
Subgroup 3  
High temperature operation:  
T
V
= T = +125°C  
J
C
Gate to source voltage(threshold)  
Gate current  
3403  
3411  
> V , I = -0.25 mA dc  
GS  
V
I
-1.0  
V dc  
DS  
D
GS(th)2  
Bias condition C, V  
= 0 V;  
= +20 V dc and -20 V dc  
nA dc  
mA dc  
ohms  
±200  
DS  
GSS2  
V
GS  
Drain current  
3413  
3421  
Bias condition C, V  
GS  
= 0 V,  
I
- 50  
DSS2  
V
DS  
= -80 V  
Static drain to source on-state  
resistance  
V
GS  
= -10 V dc, Pulsed (see 4.5.1)  
r
DS(on)2  
2N6895  
2N6896  
2N6897  
2N6898  
5.66  
0.96  
0.465  
0.24  
I
D
I
D
I
D
I
D
= - 0.74 A dc  
= - 3.8 A dc  
= - 7.6 A dc  
= - 15.8 A dc  
Low temperature operation:  
T
= T = -55°C  
J
C
Gate to source voltage  
(threshold)  
3403  
3472  
V
> V , I = -0.25 mA  
GS  
V
GS(th)3  
-5.0  
V dc  
DS  
D
Subgroup 4  
Switching time test  
I
D
= rated I  
(see 1.3);  
= 10 V dc; R =15 W  
D2  
V
GS  
gen  
= 50 percent of rated  
R
V
=15 W, V  
DD  
GS  
DS  
(see 1.3);  
Turn-on delay time  
V
DD  
= -50 V dc  
t
ns  
d(on)  
2N6895  
2N6896  
2N6897  
2N6898  
25  
60  
60  
50  
I
D
I
D
I
D
I
D
= - 0.74 V dc  
= - 3.8 V dc  
= - 7.6 V dc  
= - 15.8 V dc  
See footnotes at end of table.  
11  
MIL-PRF-19500/565B  
TABLE I. Group A inspection - Continued.  
MIL-STD-750  
Inspection 1/ 4/  
Rise time  
Symbol  
Limits  
Unit  
Method  
Conditions  
Min  
Max  
V
DD  
= -50 V dc  
t
r
ns  
2N6895  
2N6896  
2N6897  
2N6898  
45  
I
D
I
D
I
D
I
D
= - 0.74 V dc  
= - 3.8 V dc  
= - 7.6 V dc  
= - 15.8 V dc  
100  
175  
250  
Subgroup 4 - Continued.  
Turn-off delay time  
V
= -50 V dc  
t
t
ns  
ns  
DD  
d(off)  
2N6895  
2N6896  
2N6897  
2N6898  
45  
I
D
I
D
I
D
I
D
= - 0.74 V dc  
= - 3.8 V dc  
= - 7.6 V dc  
= - 15.8 V dc  
150  
275  
400  
Fall time  
V
DD  
= -50 V dc  
f
2N6895  
2N6896  
2N6897  
2N6898  
50  
I
D
I
D
I
D
I
D
= - 0.74 V dc  
= - 3.8 V dc  
= - 7.6 V dc  
= - 15.8 V dc  
100  
175  
250  
Subgroup 5  
Safe operating area  
High voltage test  
See figure 4.  
V
DS = 80 percent of rated V  
(see  
DS  
1.3)  
Electrical measurements  
See table III, steps 1, 2, 3, 4, 5, 6, and  
7
Subgroup 6  
Not applicable  
Subgroup 7  
Gate charge  
3471  
Condition A or B  
Test 1  
Q
nC  
g(on)  
On-state gate charge  
2N6895  
2N6896  
2N6897  
2N6898  
2.2  
4.7  
24  
58  
13  
31  
50  
117  
See footnotes at end of table.  
12  
MIL-PRF-19500/565B  
TABLE I. Group A inspection - Continued.  
MIL-STD-750  
Inspection 1/  
Symbol  
Limits  
Unit  
Method  
Conditions  
Min  
Max  
Subgroup 7 - Continued.  
Test 2  
Q
nC  
gs  
Gate to source charge  
2N6895  
2N6896  
2N6897  
2N6898  
0.4  
1.1  
3
1.2  
5.5  
13  
25  
6
Test 3  
Gate to drain charge  
Q
nC  
gd  
2N6895  
2N6896  
2N6897  
2N6898  
0.9  
5.5  
14  
2.9  
14.5  
36  
26  
69  
Reverse recovery time  
3473  
t
rr  
ns  
V
= £ 30 V; di/dt =100A/ms  
DD  
= 4 A  
I
F
2N6895  
2N6896  
2N6897  
2N6898  
340  
375  
500  
750  
1/ For sampling plan, see MIL-PRF-19500.  
13  
MIL-PRF-19500/565B  
TABLE II. Group A, B, C and E electrical measurements. 1/ 2/ 3/  
Step  
1.  
Inspection  
MIL-STD-750  
Conditions  
Bias condition C; I = - 1.0 mA dc,  
Symbol  
Limit  
Unit  
Min  
Max  
Method  
3407  
Breakdown voltage  
drain to source  
- 100  
V dc  
V
V
D
(BR)DSS  
V
GS  
= 0 V  
2.  
3.  
Gate to source voltage  
(threshold)  
3403  
3411  
-2.0  
-4.0  
V dc  
V
DS  
³ V ; I = -0.25 mA dc  
GS D  
GS(th)1  
Gate current  
-100  
-50  
nA dc  
Bias condition C; V  
GS  
= + 20 Vdc  
I
GSS1  
and -20 V dc; V = 0 V  
DS  
4.  
5.  
Drain current  
3413  
3421  
mA dc  
Bias condition C; V = -80 V dc;  
DS  
I
DSS1  
V
GS  
= 0 V  
Static drain to source  
“on”- state resistance  
Ohm  
V
GS  
= -10 V dc; condition A,  
r
DS(on)1  
pulsed (see 4.5.1)  
2N6895  
2N6896  
2N6897  
2N6898  
3.65  
0.6  
0.3  
0.2  
I
D
I
D
I
D
I
D
= - 0.74 V dc  
= - 3.8 V dc  
= - 7.6 V dc  
= - 15.8 V dc  
6.  
Drain to source “on”-  
state voltage  
3405  
V
= -10 V dc; condition A,  
V
DS(on)  
GS  
pulsed (see 4.5.1)  
2N6895  
2N6896  
2N6897  
2N6898  
-6.0  
-6.0  
-4.8  
-6.0  
I
D
I
D
I
D
I
D
= - 1.16 V dc  
= - 6.0 V dc  
= - 12.0 V dc  
= - 25.0 V dc  
7.  
Forward voltage  
(source drain diode)  
4011  
-0.8  
-1.6  
V
Pulsed (see 4.5.1), V  
GS  
= 0  
V
SD  
I
S
I
S
I
S
I
S
= -1.16 A dc  
= -6.04.0 A dc  
= -12.0 A dc  
= -25.0 A dc  
2N6895  
2N6896  
2N6897  
2N6898  
8.  
Thermal response  
3161  
See 4.5.3  
DV  
SD  
1/ The electrical measurements for appendix E, table VIa (JANS) of MIL-PRF-19500 are as follows:  
a. Subgroup 3, see table II herein, steps 1, 2, 3, 4, 5, 6, and 7.  
b. Subgroup 4, see table II herein, steps 1, 2, 3, 4, 5, 6, 7, and 8.  
c. Subgroup 5, see table II herein, steps 1, 2, 3, 4, 5, 6, and 7.  
2/ The electrical measurements for appendix E, table VIb (JANTX and JANTXV) of MIL-PRF-19500 are as follows:  
a. Subgroup 2, see table II herein, steps 1, 2, 3, 4, 5, 6 and 7.  
b. Subgroups 3 and 6, see table II herein, steps 1, 2, 3, 4, 5, 6, 7 and 8.  
3/ The electrical measurements for appendix E, table VII of MIL-PRF-19500 are as follows:  
a. Subgroups 2 and 3, see table II herein, steps 1, 2, 3, 4, 5, 6 and 7.  
b. Subgroup 6, see table II herein, steps 1, 2, 3, 4, 5, 6, 7 and 8.  
14  
MIL-PRF-19500/565B  
FIGURE 3. Transient thermal response.  
15  
MIL-PRF-19500/565B  
FIGURE 3. Transient thermal response - Continued.  
16  
MIL-PRF-19500/565B  
FIGURE 3. Transient thermal response - Continued.  
17  
MIL-PRF-19500/565B  
FIGURE 3. Transient thermal response - Continued.  
18  
MIL-PRF-19500/565B  
FIGURE 4. Maximum safe operating area.  
19  
MIL-PRF-19500/565B  
FIGURE 4. Maximum safe operating area – Continued.  
20  
MIL-PRF-19500/565B  
FIGURE 4. Maximum safe operating area – Continued.  
21  
MIL-PRF-19500/565B  
FIGURE 4. Maximum safe operating area – Continued.  
22  
MIL-PRF-19500/565B  
5. PACKAGING  
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When  
actual packaging of material is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to  
ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points' packaging activity  
within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is  
available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting  
the responsible packaging activity.  
5.2 The requirements for packaging shall be in accordance with MIL-PRF-19500.  
6. NOTES  
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)  
6.1 Notes. The notes specified in MIL-PRF-19500 are applicable to this specification.  
6.2 Acquisition requirements. Acquisition documents must specify the following:  
a. Issue of DODISS to be cited in the solicitation (see 2.1.1 and 2.2).  
b. The lead finish as specified (see 3.4.1).  
c. For die acquisition, specify the JANHC or JANKC letter version (see figure 2).  
d. Type designation and quality assurance level.  
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of  
award of contract, qualified for inclusion in Qualified Manufacturer's QML-19500 whether or not such products have actually been so  
listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the  
products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded  
contracts or purchase orders for the products covered by this specification. Information pertaining to qualification of products may be  
obtained from Defense Supply Center Columbus, DSCC-VQE, Columbus, OH 43216.  
6.4 Changes from previous issue. Asterisks are not used in this revision to identify changes with respect to the previous issue due to  
the extensiveness of the changes.  
Custodians:  
Army - CR  
Navy - EC  
Preparing activity:  
DLA - CC  
Air Force - 11  
NASA - NA  
(Project 5961- 2084)  
Review activities:  
Army - AR, MI, SM  
Navy - AS, CG, MC  
Air Force - 13, 19, 85, 99  
23  
STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL  
INSTRUCTIONS  
1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision  
letter should be given.  
2. The submitter of this form must complete blocks 4, 5, 6, and 7.  
3. The preparing activity must provide a reply within 30 days from receipt of the form.  
NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of  
requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to  
waive any portion of the referenced document(s) or to amend contractual requirements.  
I RECOMMEND A CHANGE:  
3. DOCUMENT TITLE  
1. DOCUMENT NUMBER  
MIL-PRF-19500/565B  
2. DOCUMENT DATE (YYMMDD)  
990521  
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPES 2N6895, 2N6896, 2N6897, AND 2N6898 JAN, JANTX,  
JANTXV AND JANS  
4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.)  
5. REASON FOR RECOMMENDATION  
6. SUBMITTER  
a. NAME (Last, First, Middle initial)  
b. ORGANIZATION  
d. TELEPHONE (Include Area Code)  
Commercial  
DSN  
c. ADDRESS (Include Zip Code)  
7. DATE SUBMITTED  
(YYMMDD)  
FAX  
EMAIL  
8. PREPARING ACTIVITY  
b. TELEPHONE  
Commercial  
a. Point of contact: Alan Barone,  
DSN  
FAX  
EMAIL  
614-692-0510  
850-0510  
614-692-6939  
alan_barone@dscc.dla.mil  
c. ADDRESS : Defense Supply Center  
Columbus, ATTN: DSCC-VQE, 3990 East  
Broad Street, Columbus, OH 43216-5000  
IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:  
Defense Standardization Program Office (DLSC-LM)  
8725 John J. Kingman, Suite 2533, Fort Belvoir, VA 22060-6221  
Telephone (703) 767-6888 DSN 427-68880  
DD Form 1426, Feb 1999 (EG)  
Previous editions are obsolete  
WHS/DIOR, Feb 99  
配单直通车
JANTXV2N6895产品参数
型号:JANTXV2N6895
生命周期:Obsolete
包装说明:CYLINDRICAL, O-MBCY-W3
Reach Compliance Code:unknown
ECCN代码:EAR99
风险等级:5.84
其他特性:RADIATION HARDENED
外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V
最大漏极电流 (ID):1.16 A
最大漏源导通电阻:3.65 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):30 pF
JEDEC-95代码:TO-205AF
JESD-30 代码:O-MBCY-W3
元件数量:1
端子数量:3
工作模式:ENHANCEMENT MODE
最高工作温度:150 °C
封装主体材料:METAL
封装形状:ROUND
封装形式:CYLINDRICAL
极性/信道类型:P-CHANNEL
功耗环境最大值:8.33 W
认证状态:Not Qualified
参考标准:MILITARY STANDARD (USA)
表面贴装:NO
端子面层:NOT SPECIFIED
端子形式:WIRE
端子位置:BOTTOM
晶体管应用:SWITCHING
晶体管元件材料:SILICON
Base Number Matches:1
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