SMD Type
Transistors
KI2304DS
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
30
Typ
Max
Unit
V
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0 V, ID = 250
VDS = VGS, ID = 250
A
A
1.5
nA
VDS = 0 V, VGS = 20 V
100
0.5
10
VDS = 30 V, VGS = 0 V
Zero Gate Voltage Drain Current
IDSS
A
VDS = 30 V, VGS = 0 V, TJ = 55
VDS = 30 V, VGS = 1.0 V, TJ = 25
1
6
4
VDS
VDS
4.5 V, VGS = 10 V
4.5 V, VGS = 4.5 V
On-State Drain Current *
ID(on)
A
VGS = 10 V, ID = 2.5 A
0.092 0.117
0.142 0.190
4.6
Drain-Source On-Resistance *
rDS(on)
VGS = 4.5 V, ID = 2.0 A
VDS = 4.5 V, ID = 2.5 A
IS = 1.25 A, VGS = 0 V
Forward Transconductance *
Diode Forward Voltage
Gate Charge
gfs
VSD
Qg
S
V
0.77
2.4
4.5
0.8
1.0
240
110
17
1.2
4
VDS = 15 V, VGS = 5 V, ID = 2.5 A
nC
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Qgt
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
10
VDS=15V,VGS=10V,ID=2.5A
VDS=15V,VGS=0V,f=1MHz
nC
pF
8
20
30
35
20
12
VDD=15V,RL=15
ns
,ID=1A,VGEN=10V,RG=6
Turn-Off Delay Time
Fall-Time
td(off)
tf
17
8
*Pulse test: PW
300 ìs duty cycle 2%..
Marking
Marking
A4
2
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