SMD Type
Transistors
KI2305DS
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
VGS = 0 V, ID = -10
VGS(th) VDS = VGS, ID = -250 ìA
Min
-8
Typ
Max
Unit
V
Drain-source breakdown voltage
Gate threshold voltage
Gate-body leakage
V(BR)DSS
A
-0.45
IGSS
nA
A
VDS = 0 V, VGS =
8 V
100
-1
VDS = -6.4 V, VGS = 0 V
Zero gate voltage drain current
On-state drain current
IDSS
-10
VDS = -6.4 V, VGS = 0 V, TJ = 55
-6
-3
VDS
VDS
-5 V, VGS = -4.5 V
-5 V, VGS = -2.5 V
ID(on)
A
VGS = -4.5 V, ID = -3.5 A
VGS = -2.5 V, ID = -3.0 A
VGS = -1.8 V, ID = -2.0 A
VDS = -5 V, ID = -3.5 A
IS = -1.6 A, VGS = 0 V
0.044 0.052
0.060 0.071
0.087 0.108
8.5
Drain-source on-state resistance
rDS(on)
Forward transconductance
Diode forward voltage
Total gate charge *
gfs
VSD
Qg
S
V
-1.2
10
2
15
VDS = -4V ,VGS = -4.5 V , ID= -3.5 A
nC
pF
Gate-source charge *
Gate-drain charge *
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
2
Input capacitance *
1245
375
210
13
VDS = -4V ,VGS = 0 , f = 1 MHz
Output capacitance *
Reverse transfer capacitance *
20
40
80
35
Turn-on time
Turn-off time
25
VDD = -4V , RL = 4Ù ,
ns
ID = -1A , VGEN =- 4.5V , RG = 6Ù
td(off)
tf
55
19
* Pulse test: PW
300 ìs duty cycle
2%.
Marking
Marking
A5
2
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