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产品型号NLASB3157DFT2的概述

一、芯片NLASB3157DFT2概述 NLASB3157DFT2是一款由Nexperia公司设计与制造的高性能双通道逻辑电平下拉电阻MOSFET。这种芯片主要用于电流驱动和信号传输应用，能够有效地减少电路中的干扰并提高信号的完整性。其设计旨在为各种数字电路提供简单易用的解决方案，尤其是在接口（如I2C、SPI）与微控制器之间的连接中。二、芯片NLASB3157DFT2的详细参数 NLASB3157DFT2的技术特点包括以下几个方面： - 工作电压范围：设备能够在1.8V到5V的电源电压范围内正常工作，适应多种逻辑电平的需求。 - 传输延迟：其输入到输出的延迟时间极低，大约为10纳秒，适合高速数字应用。 - 载流能力：NLASB3157DFT2能够承受高达30mA的直流电流，确保在高负载环境下的可靠工作。 - 输入电流：在正常工作条件下，输入电流小于1µA，节省了电路设计中的功耗。 ...

产品型号NLASB3157DFT2的Datasheet PDF文件预览

NLASB3157

2:1 Multiplexer

The NLASB3157 is an advanced CMOS analog switch fabricated

with silicon gate CMOS technology. It achieves very low

propagation delay and RDS resistances while maintaining CMOS

low power dissipation. Analog and digital voltages that may vary

across the full power−supply range (from V to GND). This device

is a drop in replacement for the NC7SB3157.

http://onsemi.com

The select pin has overvoltage protection that allows voltages

above V

up to 7.0 V to be present on the pin without damage or

CC,

disruption of operation of the part, regardless of the operating

voltage.

SC−88

DF SUFFIX

CASE 419B

Features

• High Speed: t = 1.0 ns (Typ) at V = 5.0 V

• Low Power Dissipation: I = 2.0 mA (Max) at T = 25°C

• Standard CMOS Logic Levels

MARKING DIAGRAM

• High Bandwidth, Improved Linearity

• Switches Standard NTSC/PAL Video, Audio, SPDIF and HDTV

• May be used for Clock Switching, Data Mux’ing, etc.

• Low RDS

• Break Before Make Circuitry, Prevents Inadvertent Shorts

• 2 Devices can Switch Balanced Signal Pairs, e.g.

LVDS u 200−Mb/s

AF = Specific Device Code

= Date Code

• Latchup Performance Exceeds 300 mA

• Pin for Pin Drop in for NC7SB3157

• Tiny SC88 Package Only 2.0 x 2.1 mm

ORDERING INFORMATION

• ESD Performance: Human Body Model; u 2000 V;

†

Device

Package

Shipping

Machine Model; u 200 V

• Extended Automotive Temperature Range −55°C to +125°C (See

Appendix)

• Pb−Free Package is Available

NLASB3157DFT2

NLASB3157DFT2G

SC88

3000 Tape & Reel

SC88

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Select

FUNCTION TABLE

Select Input

Function

GND

B0 Connected to A

B1 Connected to A

Figure 1. Pinout (Top View)

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

April, 2004 − Rev. 6

NLASB3157/D

NLASB3157

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Supply Voltage

−0.5 to +7.0

DC Switch Voltage (Note 1)

DC Input Voltage (Note 1)

−0.5 to V + 0.5

−0.5 to + 7.0

−50

DC Input Diode Current @ V t 0 V

°C

DC Output Current

128

OUT

DC V or Ground Current

+100

CC GND

Storage Temperature Range

stg

−65 to +150

150

Junction Temperature Under Bias

Junction Lead Temperature (Soldering, 10 Seconds)

Power Dissipation @ +85°C

°C

260

°C

180

Maximumratings are DC values beyond which the device may be damaged or have its useful life impaired. The data sheet specifications should

be met, without exception, to ensure that the system design is reliable over its power supply, temperature, and output/input loading variables. ON

Semiconductordoes not recommend operation outside data sheet specifications.

1. The input and output negative voltage ratings may be exceeded if the input and output diode current ratings are observed.

RECOMMENDED OPERATING CONDITIONS (Note 2)

Characteristic

Symbol

Min

1.65

Max

Unit

Supply Voltage Operating

Select Input Voltage

Switch Input Voltage

Output Voltage

5.5

OUT

Operating Temperature

−55

+125

°C

ns/V

Input Rise and Fall Time

t , t

Control Input V = 2.3 V−3.6 V

5.0

Control Input V = 4.5 V−5.5 V

Thermal Resistance

−

350

°C/W

2. Select input must be held HIGH or LOW, it must not float.

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NLASB3157

DC ELECTRICAL CHARACTERISTICS

T = +255C

T = −405C to +855C

(V)

Min

Typ

Max

Min

Max

Symbol

Parameter

HIGH Level

Test Conditions

Unit

1.65−1.95

2.3−5.5

0.75 V

Input Voltage

0.7 V

LOW Level

Input Voltage

1.65−1.95

2.3−5.5

0.25 V

0.3 V

Input Leakage Current 0 v V v 5.5 V

0−5.5

"0.05

"0.1

OFF State Leakage

Current

0 vA, B v V

1.65−5.5

OFF

Switch On Resistance

(Note 3)

= 0 V, I = 30 mA

= 2.4 V, I = −30 mA

= 4.5 V, I = −30 mA

4.5

3.0

5.0

7.0

= 0 V, I = 24 mA

= 3 V, I = −24 mA

3.0

2.3

4.0

9.0

= 0 V, I = 8 mA

5.0

= 2.3 V, I = −8 mA

= 0 V, I = 4 mA

= 1.65 V, I = −4 mA

1.65

5.5

6.5

Quiescent Supply

Current

= V or GND

1.0

All Channels ON or

OFF

= 0

OUT

Analog Signal Range

RANGE

On Resistance

Over Signal Range

(Note 3) (Note 7)

I = −30 mA, 0 v V

v V

4.5

3.0

I = −24 mA, 0 v V

v V

I = −8 mA, 0 v V

2.3

100

300

v V

I = −4 mA, 0 v V

1.65

v V

On Resistance Match I = −30 mA, V = 3.15

4.5

3.0

2.3

0.15

0.2

0.5

Between Channels

(Note 3) (Note 4)

(Note 5)

I = −24 mA, V = 2.1

A Bn

I = −8 mA, V = 1.6

I = −4 mA, V = 1.15

1.65

flat

On Resistance

Flatness (Note 3)

(Note 4) (Note 6)

I = −30 mA, 0 v V

5.0

3.3

2.5

1.8

6.0

v V

I = −24 mA, 0 v V

v V

I = −8 mA, 0 v V

v V

I = −4 mA, 0 v V

125

v V

3. Measured by the voltage drop between A and B pins at the indicated current through the switch. On Resistance is determined by the lower

of the voltages on the two (A or B Ports).

4. Parameter is characterized but not tested in production.

5. DR = R max − R min measured at identical V , temperature and voltage levels.

6. Flatness is defined as the difference between the maximum and minimum value of On Resistance over the specified range of conditions.

7. Guaranteed by Design.

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NLASB3157

AC ELECTRICAL CHARACTERISTICS

T = +255C

T = −405C to +855C

(V)

Figure

Number

Min

Typ Max

Min

Max

Symbol

Parameter

Test Conditions

V = OPEN

Unit

Propagation Delay

Bus to Bus (Note 9)

1.65−1.95

2.3−2.7

3.0−3.6

4.5−5.5

Figures

2, 3

PHL

PLH

1.2

0.8

0.3

Output Enable Time

Turn On Time

V = 2 V for t

1.65−1.95

2.3−2.7

3.0−3.6

4.5−5.5

6.9

5.2

7.0

3.5

2.5

1.7

7.6

5.7

Figures

2, 3

PZL

PZH

PZL

V = 0 V for t

PZH

(A to B )

Output Disable Time

Turn Off Time

(A Port to B Port)

V = 2 V for t

1.65−1.95

2.3−2.7

3.0−3.6

4.5−5.5

12.5

7.0

5.0

3.5

3.0

2.0

1.5

0.8

7.5

5.3

3.8

Figures

2, 3

PLZ

PHZ

PLZ

V = 0 V for t

PHZ

Break Before Make

Time (Note 8)

1.65−1.95

2.3−2.7

3.0−3.6

4.5−5.5

0.5

Figure 4

B−M

Charge Injection

(Note 8)

C = 0.1 nF, V

= 0 V

5.0

3.3

7.0

3.0

Figure 5

Figure 6

Figure 7

GEN

= 0 W

OIRR

Xtalk

Off Isolation (Note 10) R = 50 W

1.65−5.5

−57

f = 10 MHz

Crosstalk

R = 50 W

1.65−5.5

−54

f = 10 MHz

−3 dB Bandwidth

R = 50 W

1.65−5.5

5.0

250

MHz Figure 10

THD

Total Harmonic

R = 600 W

0.011

Distortion (Note 8)

0.5 V

P−P

f = 600 Hz to 20 kHz

CAPACITANCE (Note 11)

Figure

Number

Symbol

Parameter

Test Conditions

= 0 V

Typ

Max

Unit

Select Pin Input Capacitance

2.3

6.5

B Port Off Capacitance

= 5.0 V

Figure 8

Figure 9

IO−B

IOA−ON

A Port Capacitance when Switch is Enabled

18.5

8. Guaranteed by Design.

9. This parameter is guaranteed by design but not tested. The bus switch contributes no propagation delay other than the RC delay of the On

Resistance of the switch and the 50 pF load capacitance, when driven by an ideal voltage source (zero output impedance).

10.Off Isolation = 20 log [V /V ].

11. T = +25°C, f = 1 MHz, Capacitance is characterized but not tested in production.

http://onsemi.com

NLASB3157

APPENDIX A

DC ELECTRICAL EXTENDED AUTOMOTIVE TEMPERATURE RANGE CHARACTERISTICS

T = +255C

T = −555C to +1255C

(V)

Min

Typ

Max

Min

Max

Symbol

Parameter

HIGH Level

Test Conditions

Unit

1.65−1.95

2.3−5.5

0.75 V

Input Voltage

0.7 V

LOW Level

Input Voltage

1.65−1.95

2.3−5.5

0.25 V

0.3 V

Input Leakage Current 0 v V v 5.5 V

0−5.5

"0.05

"0.1

OFF State Leakage

Current

0 vA, B v V

1.65−5.5

OFF

Switch On Resistance

(Note 12)

= 0 V, I = 30 mA

4.5

3.0

5.0

7.0

8.5

13.0

15.0

= 2.4 V, I = −30 mA

= 4.5 V, I = −30 mA

= 0 V, I = 24 mA

= 3 V, I = −24 mA

3.0

2.3

4.0

= 0 V, I = 8 mA

5.0

= 2.3 V, I = −8 mA

= 0 V, I = 4 mA

= 1.65 V, I = −4 mA

1.65

5.5

6.5

Quiescent Supply

Current

= V or GND

1.0

All Channels ON or

OFF

= 0

OUT

Analog Signal Range

RANGE

On Resistance

Over Signal Range

(Note 12) (Note 14)

I = −30 mA, 0 v V

4.5

3.0

I = −24 mA, 0 v V

I = −8 mA, 0 v V

2.3

100

300

v V

I = −4 mA, 0 v V

1.65

v V

12.Measured by the voltage drop between A and B pins at the indicated current through the switch. On Resistance is determined by the lower

of the voltages on the two (A or B Ports).

13.Flatness is defined as the difference between the maximum and minimum value of On Resistance over the specified range of conditions.

14.Guaranteed by Design.

* For DR_ON, R_FLAT, Q, OIRR, Xtalk, BW, THD, and CIN see −405C to 855C section.

http://onsemi.com

NLASB3157

APPENDIX A

AC ELECTRICAL EXTENDED AUTOMOTIVE TEMPERATURE RANGE CHARACTERISTICS

T = +255C

T = −555C to +1255C

(V)

Figure

Number

Min Typ Max

Min

Max

Symbol

Parameter

Test Conditions

V = OPEN

Unit

Propagation Delay

Bus to Bus (Note 16)

1.65−1.95

2.3−2.7

3.0−3.6

4.5−5.5

Figures

2, 3

PHL

PLH

1.2

0.8

0.3

Output Enable Time

Turn On Time

V = 2 V for t

1.65−1.95

2.3−2.7

3.0−3.6

4.5−5.5

6.9

5.2

7.0

3.5

2.5

1.7

9.0

7.0

Figures

2, 3

PZL

PZH

PZL

V = 0 V for t

PZH

(A to B )

Output Disable Time V = 2 V for t

Turn Off Time

(A Port to B Port)

1.65−1.95

2.3−2.7

3.0−3.6

4.5−5.5

12.5

7.0

5.0

3.5

3.0

2.0

1.5

0.8

7.5

6.5

5.0

Figures

2, 3

PLZ

PHZ

PLZ

V = 0 V for t

I PHZ

Break Before Make

Time (Note 15)

1.65−1.95

2.3−2.7

3.0−3.6

4.5−5.5

0.5

Figure 4

B−M

15.Guaranteed by Design.

16.This parameter is guaranteed by design but not tested. The bus switch contributes no propagation delay other than the RC delay of the On

Resistance of the switch and the 50 pF load capacitance, when driven by an ideal voltage source (zero output impedance).

* For DR_ON, R_FLAT, Q, OIRR, Xtalk, BW, THD, and CIN see −405C to 855C section.

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NLASB3157

AC LOADING AND WAVEFORMS

FROM

NOTE: Input driven by 50 W source terminated in 50 W

NOTE: C includes load and stray capacitance

OUTPUT

UNDER

TEST

NOTE: Input PRR = 1.0 MHz; t = 500 ns

Figure 2. AC Test Circuit

t = 2.5 ns

90%

50%

90%

t = 2.5 ns

SELECT

INPUT

50%

90%

50%

90%

50%

SWITCH

INPUT

10%

GND

PZL

PLZ

10%

TRI

GND

PHL

PLH

OUTPUT

50%

+ 0.3 V

OUTPUT

50%

PZH

PHZ

− 0.3 V

50%

TRI

Figure 3. AC Waveforms

LOGIC

INPUT

OUT

0.9 × V

OUT

LOGIC

INPUT

Figure 4. Break Before Make Interval Timing

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NLASB3157

AC LOADING AND WAVEFORMS

LOGIC

OFF

GEN

OUT

INPUT

OUT

1 M

100 pF

Q = (DV

)(C )

LOGIC

INPUT

OUT

Figure 5. Charge Injection Test

10 nF

Signal

Generator

0 dBm

50 W

LOGIC INPUT

0 V or V

50 W

Analyzer

GND

50 W

Figure 6. Off Isolation

Figure 7. Crosstalk

10 nF

Capacitance

Meter

LOGIC INPUT

0 V or V

LOGIC INPUT

0 V or V

f = 1 MHz

Capacitance

Meter

f = 1 MHz

GND

Figure 8. Channel Off Capacitance

Figure 9. Channel On Capacitance

10 nF

Signal

Generator

0 dBm

50 W

LOGIC INPUT

0 V or V

GND

Figure 10. Bandwidth

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NLASB3157

PACKAGE DIMENSIONS

SC−88/SOT−363/SC−70

DF SUFFIX

CASE 419B−02

ISSUE U

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.

INCHES

DIM MIN MAX

MILLIMETERS

MIN MAX

0.071 0.087

0.045 0.053

0.031 0.043

0.004 0.012

0.026 BSC

−−− 0.004

0.004 0.010

0.004 0.012

0.008 REF

1.80

1.15

0.80

0.10

2.20

1.35

1.10

0.30

−B−

0.65 BSC

−−−

0.10

0.25

0.30

D 6 PL

0.20 REF

0.079 0.087

2.00

2.20

0.2 (0.008)

SOLDERING FOOTPRINT*

0.50

0.0197

0.65

0.025

0.65

0.025

0.40

0.0157

1.9

0.0748

inches

SCALE 20:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

MountingTechniques Reference Manual, SOLDERRM/D.

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NLASB3157

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any

liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental

damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over

time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under

its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body,

or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death

may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees,

subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of

personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.

SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

ON Semiconductor Website: http://onsemi.com

Order Literature: http://www.onsemi.com/litorder

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

Japan: ON Semiconductor, Japan Customer Focus Center

2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051

Phone: 81−3−5773−3850

For additional information, please contact your

local Sales Representative.

NLASB3157/D

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NLASB3157DFT2产品参数

型号:	NLASB3157DFT2
Brand Name：	ON Semiconductor
是否无铅：	含铅
是否Rohs认证：	不符合
生命周期：	Obsolete
IHS 制造商：	ON SEMICONDUCTOR
零件包装代码：	SOT-363
包装说明：	SC-88, SC-70, SOT-363, 6 PIN
针数：	6
制造商包装代码：	419B-02
Reach Compliance Code：	not_compliant
HTS代码：	8542.39.00.01
Factory Lead Time：	1 week
风险等级：	7.55
Is Samacsys：	N
模拟集成电路 - 其他类型：	SPDT
JESD-30 代码：	R-PDSO-G6
JESD-609代码：	e0
长度：	2 mm
湿度敏感等级：	1
信道数量：	2
功能数量：	1
端子数量：	6
标称断态隔离度：	57 dB
通态电阻匹配规范：	0.5 Ω
最大通态电阻 (Ron)：	15 Ω
最高工作温度：	125 °C
最低工作温度：	-55 °C
封装主体材料：	PLASTIC/EPOXY
封装代码：	TSSOP
封装等效代码：	TSSOP6,.08
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度（摄氏度）：	240
电源：	1.8/5 V
认证状态：	Not Qualified
座面最大高度：	1.1 mm
子类别：	Multiplexer or Switches
最大供电电压 (Vsup)：	5.5 V
最小供电电压 (Vsup)：	1.65 V
标称供电电压 (Vsup)：	2.3 V
表面贴装：	YES
最长断开时间：	13 ns
最长接通时间：	24 ns
切换：	BREAK-BEFORE-MAKE
技术：	CMOS
温度等级：	MILITARY
端子面层：	Tin/Lead (Sn/Pb)
端子形式：	GULL WING
端子节距：	0.65 mm
端子位置：	DUAL
处于峰值回流温度下的最长时间：	30
宽度：	1.25 mm
Base Number Matches：	1

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