NTR1P02T1G原理图各脚功能电路原理芯片引脚定义引脚图及功能-中国IC网-芯三七

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产品型号NTR1P02T1G的概述

芯片NTR1P02T1G的概述 NTR1P02T1G是一款由Nexperia公司生产的小功率N沟道MOSFET。MOSFET（Metal-Oxide-Semiconductor Field-Effect Transistor）在现代电子电路中扮演着至关重要的角色，尤其是在开关电源、信号处理和功率管理等应用中。这种器件因其卓越的开关性能、较低的导通电阻和高效的热管理而广受欢迎。NTR1P02T1G的设计提升了电源效率，广泛应用于各类消费电子和工业设备中。 NTR1P02T1G的详细参数在性能参数方面，NTR1P02T1G具有许多显著的特点。其基本电气参数包括： 1. V_DS（漏极-源极电压）：最高可达20V，意味着它可以在较高的电压环境下安全工作。 2. I_D（漏极电流）：最大电流为1.7A，这使其适用于多种中等负载应用。 3. R_DS(on)（导通电阻）：在V_GS=10V时典...

产品型号NTR1P02T1G的Datasheet PDF文件预览

NTR1P02T1, NVR1P02T1

Power MOSFET

−20 V, −1 A, P−Channel SOT−23 Package

Features

• Ultra Low On−Resistance Provides Higher Efficiency

and Extends Battery Life

http://onsemi.com

= 0.180 W, V = −10 V

DS(on)

= 0.280 W, V = −4.5 V

TYP

I MAX

(BR)DSS

DS(on)

• Power Management in Portable and Battery−Powered Products

• Miniature SOT−23 Surface Mount Package Saves Board Space

• Mounting Information for SOT−23 Package Provided

• AEC−Q101 Qualified and PPAP Capable − NVR1P02T1

• These Devices are Pb−Free and are RoHS Compliant

−20 V

148 mW @ −10 V

−1.0 A

P−Channel

Applications

• DC−DC Converters

• Computers

• Printers

• PCMCIA Cards

• Cellular and Cordless Telephones

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

MARKING DIAGRAM/

PIN ASSIGNMENT

Rating

Drain−to−Source Voltage

Gate−to−Source Voltage − Continuous

Drain Current

Symbol

Value

−20

Unit

DSS

Drain

ꢀ

− Continuous @ T = 25°C

−1.0

−2.67

ꢀ

− Pulsed Drain Current (t ≤ 1 ms)

SOT−23

CASE 318

STYLE 21

Total Power Dissipation @ T = 25°C

400

Gate

Source

Operating and Storage Temperature Range

T , T

− 55 to

150

°C

stg

ꢀ

= Specific Device Code

= Date Code

= Pb−Free Package

Thermal Resistance; Junction−to−Ambient

300

260

°C/W

°C

Maximum Lead Temperature for Soldering

Purposes, (1/8″ from case for 10 s)

(Note: Microdot may be in either location)

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

ORDERING INFORMATION

†

Device

Package

Shipping

NTR1P02T1G

SOT−23

3000 / Tape & Reel

(Pb−Free)

NTR1P02T3G

NVR1P02T1G

SOT−23

(Pb−Free)

10000 / Tape & Reel

3000 / Tape & Reel

SOT−23

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Publication Order Number:

October, 2011 − Rev. 6

NTR1P02T1/D

NTR1P02T1, NVR1P02T1

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

(V = 0 V, I = −10 mA)

(BR)DSS

−20

(Positive Temperature Coefficient)

mV/°C

Zero Gate Voltage Drain Current

DSS

(V = −20 V, V = 0 V, T = 25°C)

−1.0

−10

(V = −20 V, V = 0 V, T = 150°C)

Gate−Body Leakage Current (V

20 V, V = 0 V)

100

GSS

ON CHARACTERISTICS (Note 1)

Gate Threshold Voltage

GS(th)

(V = V , I = −250 mA)

(Negative Temperature Coefficient)

−1.1

−1.9

−4.0

−2.3

mV/°C

Static Drain−to−Source On−State Resistance

DS(on)

(V = −10 V, I = −1.5 A)

0.148

0.235

0.180

0.280

(V = −4.5 V, I = −0.75 A)

DYNAMIC CHARACTERISTICS

Input Capacitance

165

110

iss

(V = −5 V, V = 0 V, f = 1.0 MHz)

Output Capacitance

(V = −5 V, V = 0 V, f = 1.0 MHz)

oss

Reverse Transfer Capacitance

(V = −5 V, V = 0 V, f = 1.0 MHz)

rss

SWITCHING CHARACTERISTICS (Note 2)

Turn−On Delay Time

7.0

9.0

3.0

2.5

0.75

1.0

d(on)

(V = −15 V, I = −1 A, V = −5 V, R = 2.5 W)

Rise Time

(V = −15 V, I = −1 A, V = −5 V, R = 2.5 W)

Turn−Off Delay Time

d(off)

(V = −15 V, I = −1 A, V = −5 V, R = 2.5 W)

Fall Time

(V = −15 V, I = −1 A, V = −5 V, R = 2.5 W)

Total Gate Charge

(V = −15 V, V = −5 V, I = −0.8 A)

tot

Gate−Source Charge

(V = −15 V, V = −5 V, I = −0.8 A)

Gate−Drain Charge

(V = −15 V, V = −5 V, I = −0.8 A)

BODY−DRAIN DIODE RATINGS (Note 1)

Diode Forward On−Voltage (Note 2)

(I = −0.6 A, V = 0 V)

−0.8

−0.6

−1.0

(I = −0.6 A, V = 0 V, T = 150°C)

Reverse Recovery Time

(I = −1 A, dI /dt = 100 A/ms, V = 0 V)

13.5

10.5

3.0

Reverse Recovery Stored Charge

(I = −1 A, dI /dt = 100 A/ms, V = 0 V)

0.008

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

2. Switching characteristics are independent of operating junction temperature.

http://onsemi.com

NTR1P02T1, NVR1P02T1

2.5

T = 25°C

≥ −10 V

T = 25°C

2.25

1.75

1.5

−4 V

−4.5 V

−3.5 V

−3 V

1.75

1.25

1.5

1.25

0.75

0.5

0.75

T = 125°C

T = −40°C

0.5

0.25

= −2.5 V

0.25

0.5

0.75

1.25

1.5

1.75

1.5

2.5

3.5

−V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)

−V , GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

0.45

0.275

0.25

0.225

0.2

= −10 V

0.4

= −4.5 V

T = 150°C

0.35

T = 150°C

0.3

0.25

0.2

0.175

0.15

0.125

0.1

T = 25°C

T = −40°C

0.15

T = −40°C

0.1

0.075

0.05

0.1 0.2 0.3 0.4 0.5 0.6

0.7 0.8

0.9

0.2

0.4

0.6

0.8

1.2

1.4

1.6

−I , DRAIN CURRENT (AMPS)

Figure 3. On−Resistance versus Drain Current

Figure 4. On−Resistance versus Drain Current

and Temperature

1000

100

2.5

= 0 V

= −1.5 A

= −10 V

T = 150°C

1.5

T = 125°C

0.5

−45 −20

105

130

155

11 13 15 17 19 21

T , JUNCTION TEMPERATURE (°C)

−V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 5. On−Resistance Variation with

Figure 6. Drain−to−Source Leakage Current

Temperature

versus Voltage

http://onsemi.com

NTR1P02T1, NVR1P02T1

300

250

200

150

100

T = 25°C

iss

4.5

rss

iss

oss

1.5

= −1 A

rss

T = 25°C

= 0 V

0.5

1.5

−V

Q , TOTAL GATE CHARGE (nC)

GATE−TO−SOURCE OR DRAIN−TO−SOURCE

VOLTAGE (VOLTS)

Figure 8. Gate−to−Source and

Drain−to−Source Voltage versus Total Charge

Figure 7. Capacitance Variation

100

1.001

0.901

0.801

0.701

0.601

0.501

0.401

0.301

0.201

= 0 V

= −15 V

= −1 A

= −5 V

T = 25°C

d(off)

d(on)

0.101

0.001

R , GATE RESISTANCE (W)

100

2.0E−01 3.0E−01 4.0E−01 5.0E−01 6.0E−01 7.0E−01

, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

Figure 9. Resistive Switching Time Variation

versus Gate Resistance

Figure 10. Diode Forward Voltage versus

Current

http://onsemi.com

NTR1P02T1, NVR1P02T1

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AP

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH

THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM

THICKNESS OF BASE MATERIAL.

SEE VIEW C

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,

PROTRUSIONS, OR GATE BURRS.

MILLIMETERS

INCHES

NOM

0.040

0.002

0.018

0.005

0.114

0.051

0.075

0.008

0.021

0.094

−−−

DIM

MIN

0.89

0.01

0.37

0.09

2.80

1.20

1.78

0.10

0.35

2.10

0°

NOM

1.00

0.06

0.44

0.13

2.90

1.30

1.90

0.20

0.54

2.40

−−−

MAX

MIN

0.035

0.001

0.015

0.003

0.110

0.047

0.070

0.004

0.014

0.083

0°

MAX

0.044

0.004

0.020

0.007

0.120

0.055

0.081

0.012

0.029

0.104

10°

1.11

0.10

0.50

0.18

3.04

1.40

2.04

0.30

0.69

2.64

10°

0.25

STYLE 21:

PIN 1. GATE

VIEW C

2. SOURCE

3. DRAIN

SOLDERING FOOTPRINT*

0.95

0.037

0.95

0.037

2.0

0.079

0.9

0.035

inches

SCALE 10:1

0.8

0.031

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

For additional information, please contact your local

Sales Representative

NTR1P02T1/D

http://onsemi.com

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NTR1P02T1G产品参数

型号:	NTR1P02T1G
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
IHS 制造商：	ROCHESTER ELECTRONICS LLC
零件包装代码：	SOT-23
包装说明：	ROHS COMPLIANT, MINIATURE, CASE 318-09, TO-236, 3 PIN
针数：	3
制造商包装代码：	CASE 318-09
Reach Compliance Code：	unknown
风险等级：	5.29
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	20 V
最大漏极电流 (ID)：	1 A
最大漏源导通电阻：	0.18 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-236AB
JESD-30 代码：	R-PDSO-G3
JESD-609代码：	e3
湿度敏感等级：	NOT SPECIFIED
元件数量：	1
端子数量：	3
工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	P-CHANNEL
认证状态：	COMMERCIAL
表面贴装：	YES
端子面层：	MATTE TIN
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	40
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON

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产品型号NTR1P02T1G的概述

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