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产品型号RFD8P05SM的概述

芯片RFD8P05SM的概述 RFD8P05SM是一款高性能的N沟道MOSFET（场效应管），在电子电路设计中，广泛应用于开关电源、电动机驱动和其他高频、高效率的开关应用中。这款芯片具有较高的功率密度、开关速度快以及低导通电阻等优点，使其在现代电子设备中得到了越来越多的关注和应用。 MOSFET（Metal Oxide Semiconductor Field Effect Transistor）作为一种关键的半导体器件，在开关应用中取代了传统的机械开关，其优越的电气特性和快速开关能力，使其成为现代电子电路设计的基础。RFD8P05SM正是这类器件中的佼佼者，适合广泛的工业和消费类产品。芯片RFD8P05SM的详细参数 RFD8P05SM的主要技术参数如下： - 类型：N沟道MOSFET - 最大漏极源极电压 (V_ds)：-20 V - 最大漏极电流 (I_d)：-8 A - 导通电...

产品型号RFD8P05SM的Datasheet PDF文件预览

RFD8P05, RFD8P05SM, RFP8P05

Data Sheet

July 1999

File Number 2384.2

8A, 50V, 0.300 Ohm, P-Channel Power

MOSFETs

Features

• 8A, 50V

These products are P-Channel power MOSFETs

manufactured using the MegaFET process. This process,

which uses feature sizes approaching those of LSI circuits,

gives optimum utilization of silicon, resulting in outstanding

performance. They were designed for use in applications

such as switching regulators, switching converters, motor

drivers, and relay drivers. These transistors can be operated

directly from integrated circuits.

• r

= 0.300Ω

DS(ON)

• UIS SOA Rating Curve

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

Formerly developmental type TA09832.

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Ordering Information

PART NUMBER

PACKAGE

BRAND

Symbol

RFD8P05

TO-251AA

D8P05

RFD8P05SM

RFP8P05

TO-252AA

TO-220AB

RFP8P05

NOTE: When ordering, use the entire part number. Add the sufﬁx 9A

to obtain the TO-252AA variant in tape and reel, i.e.,

RFD8P05SM9A.

Packaging

JEDEC TO-220AB

JEDEC TO-251AA

SOURCE

DRAIN

GATE

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

JEDEC TO-252AA

DRAIN (FLANGE)

GATE

SOURCE

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

4-112

RFD8P05, RFD8P05SM, RFP8P05

Absolute Maximum Ratings

= 25 C Unless Otherwise Speciﬁed

RFD8P05,

RFD8P05SM, RFP8P05

UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

-50

DSS

Drain to Gate Voltage (R

= 20KΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

-8

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

-20

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

±20

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.27

W/ C

Single Pulse Avalanche Energy Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

See Figure 6

-55 to 175

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

300

260

pkg

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. T = 25 C to 150 C.

Electrical Speciﬁcations

= 25 C Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

= 0V (Figure 9)

MIN

TYP MAX UNITS

Drain to Source Breakdown Voltage

Gate Threshold Voltage

DSS

= 250µA, V

-50

-4

= V , I = 250µA (Figure 8)

-2

GS(TH)

Zero Gate Voltage Drain Current

= Rated BV

, V

= 0V

, T = 150 C

µA

Ω

DSS

DSS GS

= 0.8 x Rated BV

±100

0.300

DSS

Gate to Source Leakage Current

= ±20V

GSS

Drain to Source On Resistance (Note 2)

Turn-On Time

= 8A, V

= -10V (Figure 7)

DS(ON)

= -25V, I ≈ 4A, R = 9.1Ω, R = 6.25Ω,

= -10V

Turn-On Delay Time

Rise Time

d(ON)

Turn-Off Delay Time

Fall Time

d(OFF)

Turn-Off Time

100

OFF

Total Gate Charge

= 0 to -20V

= 0 to -10V

= 0 to -2V

= -40V, I = 8A,R = 5Ω,

C/W

g(TOT)

= -0.3mA

G(REF)

Gate Charge at -5V

g(-10)

Threshold Gate Charge

Thermal Resistance Junction to Case

Thermal Resistance Junction to Ambient

g(TH)

3.125

100

62.5

θJC

θJA

TO-251AA, TO-252AA

TO-220AB

Source to Drain Diode Speciﬁcations T = 25 C Unless Otherwise Speciﬁed

PARAMETER

Source to Drain Diode Voltage (Note 2)

Reverse Recovery Time

NOTE:

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

= -8A

-1.5

125

= -8A, dI /dt = 100A/µs

2. Pulse test: pulse width ≤ 300µs, Duty Cycle ≤ 2%.

3. Repetitive rating: pulse width is limited by maximum junction temperature.

4-113

RFD8P05, RFD8P05SM, RFP8P05

Typical Performance Curves Unless Otherwise Speciﬁed

1.2

1.0

0.8

0.6

0.4

0.2

-10

-8

-6

-4

-2

150

125

175

100

125

100

175

150

T , CASE TEMPERATURE ( C)

, CASE TEMPERATURE ( C)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

100

If R = 0

= (L) (I ) / (1.3 RATED BV

- V

DSS DD

)

If R ≠ 0

DC OPERATION

= (L/R) ln [(I *R) / (1.3 RATED BV

- V ) + 1]

DSS

OPERATION IN THIS

AREA IS LIMITED BY r

STARTING T = 25 C

DS(ON)

STARTING T = 150 C

= 25 C

= 175 C

0.1

-100

-1

-10

, DRAIN TO SOURCE VOLTAGE (V)

0.1

100

, TIME IN AVALANCHE (ms)

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA

FIGURE 4. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY

-20

PULSE DURATION = 80µs

= -10V

= -9V

25 C

DUTY CYCLE = 0.5% MAX

= 15V

DUTY CYCLE = 0.5% MAX

= 25 C

-16

-12

-8

175 C

= -8V

= -7V

-55 C

= -6V

= -5V

-4

= -4V

-2

-4

-6

-8

-10

-3

-6

-9

-12

-15

, DRAIN TO SOURCE VOLTAGE (V)

, GATE TO SOURCE VOLTAGE (V)

FIGURE 5. SATURATION CHARACTERISTICS

FIGURE 6. TRANSFER CHARACTERISTICS

4-114

RFD8P05, RFD8P05SM, RFP8P05

Typical Performance Curves Unless Otherwise Speciﬁed

3.0

1.50

1.25

1.00

0.75

0.50

0.25

PULSE DURATION = 80µs

DUTY CYCLE =0.5% MAX

= V , I = -250µA

2.5

2.0

1.5

1.0

= -10V, I = -8A

0.5

-50

100

150

200

-50

100

150

200

T , JUNCTION TEMPERATURE ( C)

FIGURE 7. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs

JUNCTION TEMPERATURE

1000

2.0

= 0V, f = 1MHz

= -250µA

= C

+ C

ISS

= C

RSS

OSS

800

600

400

200

≈ C + C

1.5

1.0

0.5

ISS

OSS

RSS

-15

-5

-10

-20

-25

-50

100

150

200

T , JUNCTION TEMPERATURE ( C)

, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

-50

-10

GATE

SOURCE

VOLTAGE

= BV

DSS

= BV

DSS

-37.5

-25

-8

-6

= 6.25Ω

= 0.3mA

G(REF)

= 10V

0.75BV

0.50BV

0.25BV

DSS

-12.5

-4

-2

DRAIN TO SOURCE

VOLTAGE

G(REF)

G(ACT)

G(REF)

TIME (µs)

G(ACT)

NOTE: Refer to Application Notes AN7254 and AN7260.

FIGURE 11. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT

4-115

RFD8P05, RFD8P05SM, RFP8P05

Test Circuits and Waveforms

VARY t TO OBTAIN

REQUIRED PEAK I

DUT

0.01Ω

DSS

FIGURE 12. UNCLAMPED ENERGY TEST CIRCUIT

FIGURE 13. UNCLAMPED ENERGY WAVEFORMS

OFF

d(OFF)

d(ON)

10%

DUT

90%

10%

50%

90%

PULSE WIDTH

FIGURE 14. SWITCHING TIME TEST CIRCUIT

FIGURE 15. RESISTIVE SWITCHING WAVEFORMS

g(TH)

= -1V

-V

= -5V

g(-5)

= -10V

DUT

g(REF)

g(TOT)

g(REF)

FIGURE 16. GATE CHARGE TEST CIRCUIT

FIGURE 17. GATE CHARGE WAVEFORMS

4-116

RFD8P05, RFD8P05SM, RFP8P05

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certiﬁcation.

Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-

out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and

reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result

from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site http://www.intersil.com

Sales Ofﬁce Headquarters

NORTH AMERICA

EUROPE

ASIA

Intersil Corporation

Intersil SA

Mercure Center

100, Rue de la Fusee

1130 Brussels, Belgium

TEL: (32) 2.724.2111

FAX: (32) 2.724.22.05

Intersil (Taiwan) Ltd.

7F-6, No. 101 Fu Hsing North Road

Taipei, Taiwan

Republic of China

TEL: (886) 2 2716 9310

FAX: (886) 2 2715 3029

P. O. Box 883, Mail Stop 53-204

Melbourne, FL 32902

TEL: (407) 724-7000

FAX: (407) 724-7240

4-117

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RFD8P05SM产品参数

型号:	RFD8P05SM
是否Rohs认证：	不符合
生命周期：	Obsolete
Reach Compliance Code：	not_compliant
ECCN代码：	EAR99
风险等级：	5.74
其他特性：	MEGAFET
外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	50 V
最大漏极电流 (Abs) (ID)：	8 A
最大漏极电流 (ID)：	8 A
最大漏源导通电阻：	0.3 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-252AA
JESD-30 代码：	R-PSSO-G2
JESD-609代码：	e0
元件数量：	1
端子数量：	2
工作模式：	ENHANCEMENT MODE
最高工作温度：	175 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	P-CHANNEL
功耗环境最大值：	48 W
最大功率耗散 (Abs)：	40 W
最大脉冲漏极电流 (IDM)：	20 A
认证状态：	Not Qualified
子类别：	Other Transistors
表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)
端子形式：	GULL WING
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
最大关闭时间（toff）：	100 ns
最大开启时间（吨）：	60 ns
Base Number Matches：	1

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产品型号RFD8P05SM的概述

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