5SNA 1200E330100
IGBT characteristic values
Parameter
Collector (-emitter)
breakdown voltage
Collector-emitter
4)
saturation voltage
Collector cut-off current
Gate leakage current
Gate-emitter threshold voltage
Gate charge
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
3)
Symbol
V
(BR)CES
V
CE sat
I
CES
I
GES
V
GE(TO)
Q
ge
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
Conditions
V
GE
= 0 V, I
C
= 10 mA, T
vj
= 25 °C
I
C
= 1200 A, V
GE
= 15 V
V
CE
= 3300 V, V
GE
= 0 V
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
min
3300
2.7
3.5
typ
max
Unit
V
3.1
3.8
3.4
4.3
12
120
V
V
mA
mA
nA
V
µC
V
CE
= 0 V, V
GE
=
±20
V, T
vj
= 125 °C
I
C
= 240 mA, V
CE
= V
GE
, T
vj
= 25 °C
I
C
= 1200 A, V
CE
= 1800 V,
V
GE
= -15 V .. 15 V
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz,
T
vj
= 25 °C
V
CC
= 1800 V,
I
C
= 1200 A,
R
G
= 1.5
Ω,
V
GE
=
±15
V,
L
σ
= 100 nH, inductive load
V
CC
= 1800 V,
I
C
= 1200 A,
R
G
= 1.5
Ω,
V
GE
=
±15
V,
L
σ
= 100 nH, inductive load
V
CC
= 1800 V, I
C
= 1200 A,
V
GE
= ±15 V, R
G
= 1.5
Ω,
L
σ
= 100 nH, inductive load
V
CC
= 1800 V, I
C
= 1200 A,
V
GE
= ±15 V, R
G
= 1.5
Ω,
L
σ
= 100 nH, inductive load
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
-500
5.5
12.1
187
11.57
2.22
400
400
175
200
940
1070
350
440
1340
500
7.5
nF
ns
ns
ns
ns
Turn-on switching energy
E
on
mJ
1890
1420
mJ
1950
5000
10
A
nH
mΩ
Turn-off switching energy
Short circuit current
Module stray inductance
Resistance, terminal-chip
3)
4)
E
off
I
SC
L
σ
CE
R
CC’+EE’
t
psc
≤
10
μs,
V
GE
= 15 V, T
vj
= 125 °C,
V
CC
= 2500 V, V
CEM CHIP
≤
3300 V
T
C
= 25 °C
T
C
= 125 °C
0.06
0.085
Characteristic values according to IEC 60747 – 9
Collector-emitter saturation voltage is given at chip level
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1556-03 May 05
page 2 of 9
ABB [ THE ABB GROUP ]
