5SNA 1200E330100
0.1
Analytical function for transient thermal
impedance:
Z
th(j-h)
[K/W] IGBT, DIODE
Z
th(j-c)
Diode
0.01
Z
th(j-c)
IGBT
Z
th (j-c)
(t) =
∑
R
i
(1 - e
i
=
1
2
1.375
30.1
2.887
30.1
i
IGBT
n
- t/
τ
i
)
1
5.854
207.4
11.54
203.6
3
0.641
7.55
1.229
7.53
4
0.632
1.57
1.295
1.57
5
R
i
(K/kW)
τ
i
(ms)
R
i
(K/kW)
τ
i
(ms)
0.001
0.0001
0.001
0.01
0.1
t [s]
1
10
Fig. 16
Thermal impedance vs time
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone
Fax
Email
Internet
+41 (0)58 586 1419
+41 (0)58 586 1306
DIODE
Doc. No. 5SYA1556-03 May 05
ABB [ THE ABB GROUP ]
