5SNA 1200E330100
1000
20
V
GE
= 0V
f
OSC
= 1 MHz
V
OSC
= 50 mV
C
ies
15
V
CC
= 1800 V
100
V
CC
= 2500 V
V
GE
[V]
C [nF]
10
C
oes
10
C
res
5
I
C
= 1200 A
T
vj
= 25 °C
1
0
5
10
15
20
V
CE
[V]
25
30
35
0
0
1
2
3
4
5 6 7
Q
g
[µC]
8
9
10 11 12
Fig. 9
Typical capacitances
vs collector-emitter voltage
Fig. 10
Typical gate charge characteristics
2.5
V
CC
≤
2500 V, T
vj
= 125 °C
V
GE
= ±15 V, R
G
= 1.5 ohm
2
1.5
I
Cpulse
/ I
C
1
0.5
Chip
Module
0
0
500
1000
1500 2000
V
CE
[V]
2500
3000
3500
Fig. 11
Turn-off safe operating area (RBSOA)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1556-03 May 05
page 7 of 9
ABB [ THE ABB GROUP ]
