5SNA 1200E330100
6
V
CC
= 1800 V
R
G
= 1.5 ohm
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 100 nH
9
8
7
E
on
6
E
on
, E
off
[J]
5
4
3
2
E
on
V
CC
= 1800 V
I
C
= 1200 A
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 100 nH
5
4
E
on
, E
off
[J]
3
E
off
2
1
1
E
SW
[mJ] = 357 x 10
-6
x I
C 2
+ 2.4 x I
C
+ 457
E
off
0
0
500
1000
I
C
[A]
1500
2000
2500
0
0
5
R
G
[ohm]
10
15
Fig. 5
Typical switching energies per pulse
vs collector current
Fig. 6
Typical switching energies per pulse
vs gate resistor
10
t
d(off)
10
V
CC
= 1800 V
I
C
= 1200 A
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 100 nH
t
f
t
d(on)
t
d(on)
, t
r
, t
d(off)
, t
f
[µs]
t
d(off)
t
d(on)
, t
r
, t
d(off)
, t
f
[µs]
1
t
d(on)
1
t
r
0.1
t
r
V
CC
= 1800 V
R
G
= 1.5 ohm
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 100 nH
t
f
0.01
0
500
1000
I
C
[A]
1500
2000
2500
0.1
0
5
10
R
G
[ohm]
15
20
Fig. 7
Typical switching times
vs collector current
Fig. 8
Typical switching times
vs gate resistor
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1556-03 May 05
page 6 of 9
ABB [ THE ABB GROUP ]
