5SNA 1200E330100
2000
1800
1600
E
rec
[mJ], I
rr
[A], Q
rr
[µC]
1400
1200
1000
800
600
400
200
E
rec
[mJ] = -3.45 x 10
-4
1800
V
CC
= 1800 V
R
G
= 1.5 ohm
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 100 nH
E
rec
Q
rr
1400
E
rec
[mJ], I
rr
[A], Q
rr
[µQ]
1200
1000
800
600
400
200
x I
F
+ 1.45 x I
F
+ 285
2
1600
V
CC
= 1800 V
I
F
= 1200 A
T
vj
= 125 °C
L
σ
= 100 nH
R
G
= 1.5 ohm
R
G
= 1.0 ohm
Q
rr
R
G
= 3.3 ohm
E
rec
R
G
= 6.8 ohm
0
0
500
1000
1500
I
F
[A]
2000
2500
3000
0
0
1
2
3
4
5
6
7
di/dt [kA/µs]
Fig. 12
Typical reverse recovery characteristics
vs forward current
Fig. 13
Typical reverse recovery characteristics
vs di/dt
2400
2800
V
CC
≤
2500 V
di/dt
≤
8000 A/µs
T
vj
= 125 °C
2000
25°C
125°C
1600
2400
2000
1600
I
F
[A]
1200
I
R
[A]
1200
800
800
400
400
0
0
1
2
V
F
[V]
3
4
0
0
500
1000 1500 2000 2500
V
R
[V]
3000 3500
Fig. 14
Typical diode forward characteristics,
chip level
Fig. 15
Safe operating area diode (SOA)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1556-03 May 05
page 8 of 9
R
G
= 15 ohm
I
rr
R
G
= 2.2 ohm
I
rr
ABB [ THE ABB GROUP ]
